Paul L. King

Person

Mountain View, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Composite barrier layers with controlled copper interface surface r...
- Patent number 7,755,194
- Issue date Jul 13, 2010
- Advanced Micro Devices, Inc.
- Amit Marathe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selectable open circuit and anti-fuse element
- Patent number 7,250,667
- Issue date Jul 31, 2007
- Advanced Micro Devices, Inc.
- Darin A. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conversion of transition metal to silicide through back end process...
- Patent number 7,151,020
- Issue date Dec 19, 2006
- Advanced Micro Devices, Inc.
- Jeffrey P. Patton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of lateral silicide growth in integrated circuit technology
- Patent number 7,064,067
- Issue date Jun 20, 2006
- Advanced Micro Devices, Inc.
- Paul L. King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming composite barrier layers with controlled copper i...
- Patent number 7,033,940
- Issue date Apr 25, 2006
- Advanced Micro Devices, Inc.
- Amit Marathe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selectable open circuit and anti-fuse element, and fabrication meth...
- Patent number 7,015,076
- Issue date Mar 21, 2006
- Advanced Micro Devices, Inc.
- Darin A. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low stress sidewall spacer in integrated circuit technology
- Patent number 7,005,357
- Issue date Feb 28, 2006
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide process using high K-dielectrics
- Patent number 6,784,506
- Issue date Aug 31, 2004
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation of nitride spacer
- Patent number 6,764,912
- Issue date Jul 20, 2004
- Advanced Micro Devices, Inc.
- John Clayton Foster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing electromigration by forming an electroplated cop...
- Patent number 6,717,236
- Issue date Apr 6, 2004
- Advanced Micro Devices, Inc.
- Sergey Lopatin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing electromigration by ordering zinc-doping in an e...
- Patent number 6,630,741
- Issue date Oct 7, 2003
- Advanced Micro Devices, Inc.
- Sergey Lopatin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device by calcium doping a co...
- Patent number 6,624,074
- Issue date Sep 23, 2003
- Advanced Micro Devices, Inc.
- Sergey Lopatin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabricated by reducing carbon, sulphur, and ox...
- Patent number 6,621,165
- Issue date Sep 16, 2003
- Sergey Lopatin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling the formation of metal layers
- Patent number 6,610,181
- Issue date Aug 26, 2003
- Advanced Micro Devices, Inc.
- Paul R. Besser
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Automated control of metal thickness during film deposition
- Patent number 6,611,576
- Issue date Aug 26, 2003
- Advanced Micro Devices, Inc.
- Paul R. Besser
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming nickel silicide using a one-step rapid thermal an...
- Patent number 6,605,513
- Issue date Aug 12, 2003
- Advanced Micro Devices, Inc.
- Eric N. Paton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal silicide gate transistors
- Patent number 6,602,781
- Issue date Aug 5, 2003
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming fully silicided gates
- Patent number 6,562,718
- Issue date May 13, 2003
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electroless deposition of dielectric precursor materials for use in...
- Patent number 6,559,051
- Issue date May 6, 2003
- Advanced Micro Devices, Inc.
- Matthew S. Buynoski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene NiSi metal gate high-k transistor
- Patent number 6,475,874
- Issue date Nov 5, 2002
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device formed by calcium doping a copper surface usin...
- Patent number 6,469,387
- Issue date Oct 22, 2002
- Advanced Micro Devices, Inc.
- Sergey Lopatin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide gate transistors
- Patent number 6,465,309
- Issue date Oct 15, 2002
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced electroless deposition of dielectric precursor materials f...
- Patent number 6,465,334
- Issue date Oct 15, 2002
- Advanced Micro Devices, Inc.
- Matthew S. Buynoski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making silicide stop layer in a damascene semiconductor s...
- Patent number 6,458,679
- Issue date Oct 1, 2002
- Advanced Micro Devices, Inc.
- Eric N. Paton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing carbon, sulphur, and oxygen impurities in a calc...
- Patent number 6,444,580
- Issue date Sep 3, 2002
- Advanced Micro Devices, Inc.
- Sergey Lopatin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement of nickel silicide formation by use of nickel pre-amorp...
- Patent number 6,380,057
- Issue date Apr 30, 2002
- Advanced Micro Devices, Inc.
- Matthew S. Buynoski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrogen passivated silicon nitride spacers for reduced nickel sili...
- Patent number 6,372,644
- Issue date Apr 16, 2002
- Advanced Micro Devices, Inc.
- John C. Foster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide gate transistors
- Patent number 6,368,950
- Issue date Apr 9, 2002
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene NiSi metal gate high-k transistor
- Patent number 6,342,414
- Issue date Jan 29, 2002
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrolytic deposition of dielectric precursor materials for use i...
- Patent number 6,300,203
- Issue date Oct 9, 2001
- Advanced Micro Devices, Inc.
- Matthew S. Buynoski
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTABLE OPEN CIRCUIT AND ANTI-FUSE ELEMENT
- Publication number 20060208321
- Publication date Sep 21, 2006
- Advanced Micro Devices, Inc.
- Darin A. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low stress sidewall spacer in integrated circuit technology
- Publication number 20050153496
- Publication date Jul 14, 2005
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of removing oxidized portions at an interface of a metal sur...
- Publication number 20030072695
- Publication date Apr 17, 2003
- Hartmut Ruelke
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
IMPROVED SILICIDE PROCESS USING HIGH K-DIELECTRICS
- Publication number 20030042515
- Publication date Mar 6, 2003
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicide stop layer in a damascene semiconductor structure
- Publication number 20030034533
- Publication date Feb 20, 2003
- Advanced Micro Devices, Inc.
- Eric N. Paton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Damascene nisi metal gate high-k transistor
- Publication number 20020102848
- Publication date Aug 1, 2002
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING NICKEL SILICIDE USING A ONE-STEP RAPID THERMAL AN...
- Publication number 20020068408
- Publication date Jun 6, 2002
- Advanced Micro Devices, Inc.
- Eric N. Paton
- H01 - BASIC ELECTRIC ELEMENTS

Paul L. King

Person

Patents Grantslast 30 patents

Composite barrier layers with controlled copper interface surface r...

Selectable open circuit and anti-fuse element

Conversion of transition metal to silicide through back end process...

Reduction of lateral silicide growth in integrated circuit technology

Method of forming composite barrier layers with controlled copper i...

Selectable open circuit and anti-fuse element, and fabrication meth...

Low stress sidewall spacer in integrated circuit technology

Silicide process using high K-dielectrics

Passivation of nitride spacer

Method of reducing electromigration by forming an electroplated cop...

Method of reducing electromigration by ordering zinc-doping in an e...

Method of fabricating a semiconductor device by calcium doping a co...

Semiconductor device fabricated by reducing carbon, sulphur, and ox...

Method of controlling the formation of metal layers

Automated control of metal thickness during film deposition

Method of forming nickel silicide using a one-step rapid thermal an...

Metal silicide gate transistors

Process for forming fully silicided gates

Electroless deposition of dielectric precursor materials for use in...

Damascene NiSi metal gate high-k transistor

Semiconductor device formed by calcium doping a copper surface usin...

Silicide gate transistors

Enhanced electroless deposition of dielectric precursor materials f...

Method of making silicide stop layer in a damascene semiconductor s...

Method of reducing carbon, sulphur, and oxygen impurities in a calc...

Enhancement of nickel silicide formation by use of nickel pre-amorp...

Hydrogen passivated silicon nitride spacers for reduced nickel sili...

Silicide gate transistors

Damascene NiSi metal gate high-k transistor

Electrolytic deposition of dielectric precursor materials for use i...

Patents Applicationslast 30 patents

SELECTABLE OPEN CIRCUIT AND ANTI-FUSE ELEMENT

Low stress sidewall spacer in integrated circuit technology

Method of removing oxidized portions at an interface of a metal sur...

IMPROVED SILICIDE PROCESS USING HIGH K-DIELECTRICS

Silicide stop layer in a damascene semiconductor structure

Damascene nisi metal gate high-k transistor

METHOD OF FORMING NICKEL SILICIDE USING A ONE-STEP RAPID THERMAL AN...