Paul M. Kozlowski

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Deposition of hydrogenated thin film
- Patent number 8,828,504
- Issue date Sep 9, 2014
- International Business Machines Corporation
- Osama Tobail
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Thin germanium oxynitride gate dielectric for germanium-based devices
- Patent number 7,078,300
- Issue date Jul 18, 2006
- International Business Machines Corporation
- Evgeni Gousev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned silicide (salicide) process for strained silicon MOSFE...
- Patent number 6,503,833
- Issue date Jan 7, 2003
- International Business Machines Corporation
- Atul Champaklal Ajmera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for retarding high temperature agglomeration o...
- Patent number 6,413,859
- Issue date Jul 2, 2002
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
UHV horizontal hot wall cluster CVD/growth design
- Patent number 6,350,321
- Issue date Feb 26, 2002
- International Business Machines Corporation
- Kevin K. Chan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Deposition of Hydrogenated Thin Film
- Publication number 20120156393
- Publication date Jun 21, 2012
- International Business Machines Corporation
- Osama Tobail
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ANNEAL SEQUENCE INTEGRATION FOR CMOS DEVICES
- Publication number 20090186457
- Publication date Jul 23, 2009
- International Business Machines Corporation
- Kam-Leung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin germanium oxynitride gate dielectric for germanium-based devices
- Publication number 20060202279
- Publication date Sep 14, 2006
- International Business Machines Corporation
- Evgeni Gousev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin germanium oxynitride gate dielectric for germanium-based devices
- Publication number 20050070122
- Publication date Mar 31, 2005
- Evgeni Gousev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned silicide (salicide) process for strained silicon MOSFE...
- Publication number 20030068883
- Publication date Apr 10, 2003
- International Business Machines Corporation
- Atul Champaklal Ajmera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for retarding high temperature agglomeration o...
- Publication number 20020151158
- Publication date Oct 17, 2002
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR RETARDING HIGH TEMPERATURE AGGLOMERATION O...
- Publication number 20020061636
- Publication date May 23, 2002
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS

Paul M. Kozlowski

Person

Patents Grantslast 30 patents

Deposition of hydrogenated thin film

Thin germanium oxynitride gate dielectric for germanium-based devices

Self-aligned silicide (salicide) process for strained silicon MOSFE...

Method and structure for retarding high temperature agglomeration o...

UHV horizontal hot wall cluster CVD/growth design

Patents Applicationslast 30 patents

Deposition of Hydrogenated Thin Film

ANNEAL SEQUENCE INTEGRATION FOR CMOS DEVICES

Thin germanium oxynitride gate dielectric for germanium-based devices

Thin germanium oxynitride gate dielectric for germanium-based devices

Self-aligned silicide (salicide) process for strained silicon MOSFE...

Method and structure for retarding high temperature agglomeration o...

METHOD AND STRUCTURE FOR RETARDING HIGH TEMPERATURE AGGLOMERATION O...