Pavel Fastenko

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Sunnyvale, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Apparatus and method for source side implantation after spacer form...
- Patent number 8,896,048
- Issue date Nov 25, 2014
- Spansion LLC
- Richard Fastow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a flash memory device with straight word lines
- Patent number 7,851,306
- Issue date Dec 14, 2010
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for forming straight word lines in a flash memory...
- Patent number 7,488,657
- Issue date Feb 10, 2009
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with reduced DIBL and Vss resistance
- Patent number 7,170,130
- Issue date Jan 30, 2007
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with plasma-grown oxide spacer for reduced DIBL and Vss...
- Patent number 7,151,028
- Issue date Dec 19, 2006
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for eliminating word line bending by source si...
- Patent number 7,029,975
- Issue date Apr 18, 2006
- Advanced Mirco Devices, Inc.
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FLASH MEMORY DEVICE WITH STRAIGHT WORD LINES
- Publication number 20090090953
- Publication date Apr 9, 2009
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for forming straight word lines in a flash memory...
- Publication number 20060286750
- Publication date Dec 21, 2006
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory cell with reduced DIBL and Vss resistance
- Publication number 20060035431
- Publication date Feb 16, 2006
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS