Pei-Feng Sun

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Wafer and the manufacturing and reclaiming methods thereof
- Patent number 7,432,204
- Issue date Oct 7, 2008
- Mosel Vitelic, Inc.
- Jen Chieh Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing Schottky diode device
- Patent number 7,282,429
- Issue date Oct 16, 2007
- Mosel Vitelic, Inc.
- Shih-Chi Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming rounded corner in trench
- Patent number 6,991,994
- Issue date Jan 31, 2006
- Mosel Vitelic, Inc.
- Pei-Feng Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench filling process for preventing formation of voids in trench
- Patent number 6,828,196
- Issue date Dec 7, 2004
- Mosel Vitelec, Inc.
- Pei-Feng Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Few-particle-induced low-pressure TEOS process
- Patent number 6,492,248
- Issue date Dec 10, 2002
- Mosel Vitelic Inc
- Jen Chieh Chang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of LPCVD silicon nitride deposition
- Patent number 6,147,013
- Issue date Nov 14, 2000
- Mosel Vitelic Inc.
- Pei-Feng Sun
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Monitoring method for furnace apparatus
- Publication number 20060091589
- Publication date May 4, 2006
- MOSEL VITELIC, INC.
- Ming-Hung Chiu
- C21 - METALLURGY OF IRON
Information Patent Application
Method of manufacturing schottky diode device
- Publication number 20060046368
- Publication date Mar 2, 2006
- Mosel Vitelic Inc.
- Shih-Chi Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wafer and the manufacturing and reclaiming methods thereof
- Publication number 20050248004
- Publication date Nov 10, 2005
- MOSEL VITELIC, INC.
- Jen Chieh Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming rounded corner in trench
- Publication number 20040253831
- Publication date Dec 16, 2004
- MOSEL VITELIC, INC.
- Pei-Feng Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench filling process for preventing formation of voids in trench
- Publication number 20040166635
- Publication date Aug 26, 2004
- MOSEL VITELIC, INC.
- Pei-Feng Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus for forming film in semiconductor process and method for...
- Publication number 20040112290
- Publication date Jun 17, 2004
- Mosel Vitelic, Inc.
- Jui-Ping Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Few-particle-induced low-pressure teos process
- Publication number 20020058398
- Publication date May 16, 2002
- Jen Chieh Chang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR AUTOMATICALLY ADJUSTING CONCENTRATION OF SOLUTION USED I...
- Publication number 20020001850
- Publication date Jan 3, 2002
- JUI-PING LI
- C11 - ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES FATTY ACIDS...

Pei-Feng Sun

Person

Patents Grantslast 30 patents

Wafer and the manufacturing and reclaiming methods thereof

Method of manufacturing Schottky diode device

Method of forming rounded corner in trench

Trench filling process for preventing formation of voids in trench

Few-particle-induced low-pressure TEOS process

Method of LPCVD silicon nitride deposition

Patents Applicationslast 30 patents

Monitoring method for furnace apparatus

Method of manufacturing schottky diode device

Wafer and the manufacturing and reclaiming methods thereof

Method of forming rounded corner in trench

Trench filling process for preventing formation of voids in trench

Apparatus for forming film in semiconductor process and method for...

Few-particle-induced low-pressure teos process

METHOD FOR AUTOMATICALLY ADJUSTING CONCENTRATION OF SOLUTION USED I...