Peide Ye

Person

West Lafayette, IN, US

People

Patents Grantslast 30 patents

Information Patent Grant
INP-based transistor fabrication
- Patent number 10,541,315
- Issue date Jan 21, 2020
- Purdue Research Foundation
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of laser direct synthesis of graphene
- Patent number 10,000,384
- Issue date Jun 19, 2018
- Purdue Research Foundation
- Xianfan Xu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
InP-based transistor fabrication
- Patent number 9,780,190
- Issue date Oct 3, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InP-based transistor fabrication
- Patent number 8,329,541
- Issue date Dec 11, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transparent nanowire transistors and methods for fabricating same
- Patent number 7,910,932
- Issue date Mar 22, 2011
- Northwestern University
- Tobin J. Marks
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High-performance field effect transistors with self-assembled nanod...
- Patent number 7,633,130
- Issue date Dec 15, 2009
- Northwestern University
- Tobin J. Marks
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ATOMIC LAYER DEPOSITED (ALD) OXIDE SEMICONDUCTORS FOR INTEGRATED CI...
- Publication number 20230178441
- Publication date Jun 8, 2023
- Purdue Research Foundation
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INP-BASED TRANSISTOR FABRICATION
- Publication number 20180019320
- Publication date Jan 18, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Laser Direct Synthesis of Graphene
- Publication number 20130323158
- Publication date Dec 5, 2013
- Xianfan Xu
- B82 - NANO-TECHNOLOGY
Information Patent Application
InP-Based Transistor Fabrication
- Publication number 20130040431
- Publication date Feb 14, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transparent nanowire transistors and methods for fabricating same
- Publication number 20110253970
- Publication date Oct 20, 2011
- Tobin J. Marks
- B82 - NANO-TECHNOLOGY
Information Patent Application
Transparent Nanowire Transistors and Methods for Fabricating Same
- Publication number 20090050876
- Publication date Feb 26, 2009
- Tobin J. Marks
- B82 - NANO-TECHNOLOGY
Information Patent Application
InP-Based Transistor Fabrication
- Publication number 20090042344
- Publication date Feb 12, 2009
- AmberWave Systems Corporation
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD OF FORMING METAL OXIDE SEMICONDUCTOR FIELD-EFF...
- Publication number 20080048216
- Publication date Feb 28, 2008
- Peide D. Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-performance field effect transistors with self-assembled nanod...
- Publication number 20070284629
- Publication date Dec 13, 2007
- Tobin J. Marks
- B82 - NANO-TECHNOLOGY

Person

Patents Grantslast 30 patents

INP-based transistor fabrication

Method of laser direct synthesis of graphene

InP-based transistor fabrication

InP-based transistor fabrication

Transparent nanowire transistors and methods for fabricating same

High-performance field effect transistors with self-assembled nanod...

Patents Applicationslast 30 patents

ATOMIC LAYER DEPOSITED (ALD) OXIDE SEMICONDUCTORS FOR INTEGRATED CI...

INP-BASED TRANSISTOR FABRICATION

Method of Laser Direct Synthesis of Graphene

InP-Based Transistor Fabrication

Transparent nanowire transistors and methods for fabricating same

Transparent Nanowire Transistors and Methods for Fabricating Same

InP-Based Transistor Fabrication

APPARATUS AND METHOD OF FORMING METAL OXIDE SEMICONDUCTOR FIELD-EFF...

High-performance field effect transistors with self-assembled nanod...