Peijie Feng

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-gate high electron mobility transistors (HEMTs) employing tun...
- Patent number 11,855,198
- Issue date Dec 26, 2023
- QUALCOMM Incorporated
- Chenjie Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around (GAA) transistors with shallow source/drain regions...
- Patent number 11,545,555
- Issue date Jan 3, 2023
- QUALCOMM Incorporated
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated device comprising a CMOS structure comprising well-less...
- Patent number 11,502,079
- Issue date Nov 15, 2022
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors (FET) circuits employing topside and backs...
- Patent number 11,437,379
- Issue date Sep 6, 2022
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor (FET) comprising inner spacers and voids be...
- Patent number 11,411,092
- Issue date Aug 9, 2022
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized contact structure
- Patent number 11,387,335
- Issue date Jul 12, 2022
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with superlattice fin
- Patent number 11,380,685
- Issue date Jul 5, 2022
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around (GAA) transistors with additional bottom channel fo...
- Patent number 11,257,917
- Issue date Feb 22, 2022
- QUALCOMM Incorporated
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around devices with reduced parasitic capacitance
- Patent number 11,189,617
- Issue date Nov 30, 2021
- QUALCOMM Incorporated
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuits having a diffusion break with avoided or reduced adjacent...
- Patent number 10,763,364
- Issue date Sep 1, 2020
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuits having a diffusion break with avoided or reduced adjacent...
- Patent number 10,700,204
- Issue date Jun 30, 2020
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Finger metal-oxide-metal (FMOM) capacitor
- Patent number 10,686,031
- Issue date Jun 16, 2020
- QUALCOMM Incorporated
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CELL STRUCTURES USING FULL BACKSIDE CONNECTIVITY
- Publication number 20250096075
- Publication date Mar 20, 2025
- QUALCOMM Incorporated
- Shreesh NARASIMHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES
- Publication number 20240429236
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING F...
- Publication number 20240429300
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DIFFERENT GATE DIELECTRIC THICKNESSES
- Publication number 20240421209
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED-SHAPED EXTENSION REGION(S) FOR GATE-ALL-AROUND (GAA) FIELD...
- Publication number 20240371924
- Publication date Nov 7, 2024
- QUALCOMM Incorporated
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZED CONTACT STRUCTURE
- Publication number 20220109053
- Publication date Apr 7, 2022
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SUPERLATTICE FIN
- Publication number 20220108983
- Publication date Apr 7, 2022
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS (FET) CIRCUITS EMPLOYING TOPSIDE AND BACKS...
- Publication number 20220093594
- Publication date Mar 24, 2022
- QUALCOMM Incorporated
- Stanley Seungchul SONG
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
GATE-ALL-AROUND (GAA) TRANSISTORS WITH SHALLOW SOURCE/DRAIN REGIONS...
- Publication number 20220037493
- Publication date Feb 3, 2022
- QUALCOMM Incorporated
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) TRANSISTORS WITH ADDITIONAL BOTTOM CHANNEL FO...
- Publication number 20210384310
- Publication date Dec 9, 2021
- QUALCOMM Incorporated
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR (FET) COMPRISING INNER SPACERS AND VOIDS BE...
- Publication number 20210351276
- Publication date Nov 11, 2021
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE HIGH ELECTRON MOBILITY TRANSISTORS (HEMTs) EMPLOYING TUN...
- Publication number 20210320197
- Publication date Oct 14, 2021
- QUALCOMM Incorporated
- Chenjie TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA ZERO INTERCONNECT LAYER METAL RESISTOR INTEGRATION
- Publication number 20210305155
- Publication date Sep 30, 2021
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLEXIBLE GAA NANOSHEET HEIGHT AND CHANNEL MATERIALS
- Publication number 20210233909
- Publication date Jul 29, 2021
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND DEVICES WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20210233911
- Publication date Jul 29, 2021
- QUALCOMM Incorporated
- Peijie FENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DEVICE COMPRISING A CMOS STRUCTURE COMPRISING WELL-LESS...
- Publication number 20210057410
- Publication date Feb 25, 2021
- QUALCOMM Incorporated
- Stanley Seungchul SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW PARASITIC MIDDLE-OF-LINE SCHEME
- Publication number 20210028115
- Publication date Jan 28, 2021
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUITS HAVING A DIFFUSION BREAK WITH AVOIDED OR REDUCED ADJACENT...
- Publication number 20200303550
- Publication date Sep 24, 2020
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAPS IN TRANSISTOR GATE METAL
- Publication number 20200234999
- Publication date Jul 23, 2020
- QUALCOMM Incorporated
- Ye LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE THIN FILM TRANSISTOR WITH NEGATIVE INDEX MATERIAL
- Publication number 20200066858
- Publication date Feb 27, 2020
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUITS HAVING A DIFFUSION BREAK WITH AVOIDED OR REDUCED ADJACENT...
- Publication number 20200058792
- Publication date Feb 20, 2020
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINGER METAL-OXIDE-METAL (FMOM) CAPACITOR
- Publication number 20190305077
- Publication date Oct 3, 2019
- QUALCOMM Incorporated
- Peijie FENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (...
- Publication number 20170207313
- Publication date Jul 20, 2017
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (...
- Publication number 20170170268
- Publication date Jun 15, 2017
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS

Peijie Feng

Person

Patents Grantslast 30 patents

Multi-gate high electron mobility transistors (HEMTs) employing tun...

Gate-all-around (GAA) transistors with shallow source/drain regions...

Integrated device comprising a CMOS structure comprising well-less...

Field-effect transistors (FET) circuits employing topside and backs...

Field effect transistor (FET) comprising inner spacers and voids be...

Optimized contact structure

Semiconductor device with superlattice fin

Gate-all-around (GAA) transistors with additional bottom channel fo...

Gate-all-around devices with reduced parasitic capacitance

Circuits having a diffusion break with avoided or reduced adjacent...

Circuits having a diffusion break with avoided or reduced adjacent...

Finger metal-oxide-metal (FMOM) capacitor

Patents Applicationslast 30 patents

MEMORY CELL STRUCTURES USING FULL BACKSIDE CONNECTIVITY

VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES

GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING F...

SEMICONDUCTOR DEVICES WITH DIFFERENT GATE DIELECTRIC THICKNESSES

ENHANCED-SHAPED EXTENSION REGION(S) FOR GATE-ALL-AROUND (GAA) FIELD...

OPTIMIZED CONTACT STRUCTURE

SEMICONDUCTOR DEVICE WITH SUPERLATTICE FIN

FIELD-EFFECT TRANSISTORS (FET) CIRCUITS EMPLOYING TOPSIDE AND BACKS...

GATE-ALL-AROUND (GAA) TRANSISTORS WITH SHALLOW SOURCE/DRAIN REGIONS...

GATE-ALL-AROUND (GAA) TRANSISTORS WITH ADDITIONAL BOTTOM CHANNEL FO...

FIELD EFFECT TRANSISTOR (FET) COMPRISING INNER SPACERS AND VOIDS BE...

MULTI-GATE HIGH ELECTRON MOBILITY TRANSISTORS (HEMTs) EMPLOYING TUN...

VIA ZERO INTERCONNECT LAYER METAL RESISTOR INTEGRATION

FLEXIBLE GAA NANOSHEET HEIGHT AND CHANNEL MATERIALS

GATE-ALL-AROUND DEVICES WITH REDUCED PARASITIC CAPACITANCE

INTEGRATED DEVICE COMPRISING A CMOS STRUCTURE COMPRISING WELL-LESS...

LOW PARASITIC MIDDLE-OF-LINE SCHEME

CIRCUITS HAVING A DIFFUSION BREAK WITH AVOIDED OR REDUCED ADJACENT...

GAPS IN TRANSISTOR GATE METAL

HIGH PERFORMANCE THIN FILM TRANSISTOR WITH NEGATIVE INDEX MATERIAL

CIRCUITS HAVING A DIFFUSION BREAK WITH AVOIDED OR REDUCED ADJACENT...

FINGER METAL-OXIDE-METAL (FMOM) CAPACITOR

NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (...

NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (...