Peijie FENG

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Clifton Park, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
FinFET conformal junction and high epi surface dopant concentration...
- Patent number 9,577,040
- Issue date Feb 21, 2017
- GLOBALFOUNDRIES Inc.
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET conformal junction and abrupt junction with reduced damage m...
- Patent number 9,559,176
- Issue date Jan 31, 2017
- GLOBALFOUNDRIES Inc.
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET conformal junction and high EPI surface dopant concentration...
- Patent number 9,406,752
- Issue date Aug 2, 2016
- GLOBALFOUNDRIES Inc.
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET conformal junction and abrupt junction with reduced damage m...
- Patent number 9,397,162
- Issue date Jul 19, 2016
- Globalfoundries Inc.
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFET CONFORMAL JUNCTION AND HIGH EPI SURFACE DOPANT CONCENTRATION...
- Publication number 20160308005
- Publication date Oct 20, 2016
- GLOBALFOUNDRIES INC.
- Peijie FENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CONFORMAL JUNCTION AND ABRUPT JUNCTION WITH REDUCED DAMAGE M...
- Publication number 20160293718
- Publication date Oct 6, 2016
- GLOBALFOUNDRIES INC.
- Peijie FENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CONFORMAL JUNCTION AND ABRUPT JUNCTION WITH REDUCED DAMAGE M...
- Publication number 20160190252
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Peijie FENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CONFORMAL JUNCTION AND HIGH EPI SURFACE DOPANT CONCENTRATION...
- Publication number 20160190251
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Peijie FENG
- H01 - BASIC ELECTRIC ELEMENTS