Peng-Fei Zhang

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Adaptations of task-oriented agents using user interactions
- Patent number 12,175,966
- Issue date Dec 24, 2024
- Amazon Technologies, Inc.
- Yi-An Lai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device including mixed oxide charge trapping materials and m...
- Patent number 12,150,302
- Issue date Nov 19, 2024
- SanDisk Technologies LLC
- Ramy Nashed Bassely Said
Information Patent Grant
Three dimensional memory device containing dummy word lines and p-n...
- Patent number 12,035,520
- Issue date Jul 9, 2024
- SanDisk Technologies LLC
- Yanli Zhang
Information Patent Grant
Non-volatile memory with one sided phased ramp down after program-v...
- Patent number 11,972,819
- Issue date Apr 30, 2024
- SANDISK TECHNOLOGIES LLC
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device including low-k drain-select-level...
- Patent number 11,871,580
- Issue date Jan 9, 2024
- SanDisk Technologies LLC
- Peng Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contextual natural language understanding for conversational agents
- Patent number 11,580,968
- Issue date Feb 14, 2023
- Amazon Technologies, Inc.
- Arshit Gupta
- G10 - MUSICAL INSTRUMENTS ACOUSTICS
Information Patent Grant
Multi-modal spoken language understanding systems
- Patent number 11,562,735
- Issue date Jan 24, 2023
- Amazon Technologies, Inc.
- Arshit Gupta
- G10 - MUSICAL INSTRUMENTS ACOUSTICS
Information Patent Grant
Bi-directional sensing in a memory
- Patent number 11,423,993
- Issue date Aug 23, 2022
- SanDisk Technologies LLC
- Zhiping Zhang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Periodic reduced word line bias which increases channel boosting
- Patent number 11,309,031
- Issue date Apr 19, 2022
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Hole pre-charge scheme using gate induced drain leakage generation
- Patent number 11,211,392
- Issue date Dec 28, 2021
- SanDisk Technologies LLC
- Sarath Puthenthermadam
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device containing structures for enhancing...
- Patent number 11,201,111
- Issue date Dec 14, 2021
- SanDisk Technologies LLC
- Dengtao Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device containing plural work function wor...
- Patent number 11,101,288
- Issue date Aug 24, 2021
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing plural work function wor...
- Patent number 11,063,063
- Issue date Jul 13, 2021
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for presentation of audio using wearable device
- Patent number 10,904,669
- Issue date Jan 26, 2021
- Amazon Technologies, Inc.
- Shahram Talakoub
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Non-volatile memory with countermeasure for program disturb includi...
- Patent number 10,832,785
- Issue date Nov 10, 2020
- SanDisk Technologies LLC
- Dengtao Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with countermeasure for program disturb includi...
- Patent number 10,643,718
- Issue date May 5, 2020
- SanDisk Technologies LLC
- Dengtao Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with countermeasure for program disturb includi...
- Patent number 10,580,504
- Issue date Mar 3, 2020
- SanDisk Technologies LLC
- Dengtao Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including partially surrounding sel...
- Patent number 10,373,969
- Issue date Aug 6, 2019
- SanDisk Technologies LLC
- Yanli Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device containing floating gate select tra...
- Patent number 10,290,643
- Issue date May 14, 2019
- SanDisk Technologies LLC
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with partially discrete charge stor...
- Patent number 9,960,180
- Issue date May 1, 2018
- SanDisk Technologies LLC
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor devices using shallow trench is...
- Patent number 6,284,623
- Issue date Sep 4, 2001
- Peng-Fei Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ASYMMETRIC VREADK TO REDUCE NEIGHBORING WORD LINE INTERFERENCE IN A...
- Publication number 20240371444
- Publication date Nov 7, 2024
- Western Digital Technologies, Inc.
- Dengtao Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
NEGATIVE WORD LINE ENABLED PRE-BOOSTING STRATEGY TO IMPROVE NAND PR...
- Publication number 20240355401
- Publication date Oct 24, 2024
- SANDISK TECHNOLOGIES LLC
- Wei Cao
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING AN ELECTRICALLY CONDUCTIVE LAYER WITH A TAP...
- Publication number 20240292627
- Publication date Aug 29, 2024
- SANDISK TECHNOLOGIES LLC
- Takuya MUROOKA
Information Patent Application
CHANNEL PRE-CHARGE PROCESS IN A MEMORY DEVICE
- Publication number 20240203511
- Publication date Jun 20, 2024
- SANDISK TECHNOLOGIES LLC
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH DUMMY WORD LINE ASSISTED PRE-CHARGE
- Publication number 20240145006
- Publication date May 2, 2024
- SANDISK TECHNOLOGIES LLC
- Peng Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
GATE-INDUCED DRAIN LEAKAGE PRE-CHARGE IN SUB-BLOCK MODE FOR THREE O...
- Publication number 20240112743
- Publication date Apr 4, 2024
- SANDISK TECHNOLOGIES LLC
- Peng Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
DUAL-WAY SENSING SCHEME FOR BETTER NEIGHBORING WORD-LINE INTERFERENCE
- Publication number 20240079068
- Publication date Mar 7, 2024
- SANDISK TECHNOLOGIES LLC
- Dengtao Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING LOW-K DRAIN-SELECT-LEVEL...
- Publication number 20240064985
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Masanori Tsutsumi
Information Patent Application
NON-VOLATILE MEMORY WITH ONE SIDED PHASED RAMP DOWN AFTER PROGRAM-V...
- Publication number 20240029806
- Publication date Jan 25, 2024
- SANDISK TECHNOLOGIES LLC
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING MIXED OXIDE CHARGE TRAPPING MATERIALS AND M...
- Publication number 20230269939
- Publication date Aug 24, 2023
- SANDISK TECHNOLOGIES LLC
- Ramy Nashed Bassely SAID
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL MEMORY DEVICE CONTAINING DUMMY WORD LINES AND P-N...
- Publication number 20230099107
- Publication date Mar 30, 2023
- SANDISK TECHNOLOGIES LLC
- Yanli ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING LOW-K DRAIN-SELECT-LEVEL...
- Publication number 20220367487
- Publication date Nov 17, 2022
- SANDISK TECHNOLOGIES LLC
- Peng ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERIODIC REDUCED WORD LINE BIAS WHICH INCREASES CHANNEL BOOSTING
- Publication number 20220068390
- Publication date Mar 3, 2022
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Application
HOLE PRE-CHARGE SCHEME USING GATE INDUCED DRAIN LEAKAGE GENERATION
- Publication number 20210408024
- Publication date Dec 30, 2021
- SANDISK TECHNOLOGIES LLC
- Sarath Puthenthermadam
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL WORK FUNCTION WOR...
- Publication number 20210183883
- Publication date Jun 17, 2021
- SANDISK TECHNOLOGIES LLC
- Yanli ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL WORK FUNCTION WOR...
- Publication number 20210183882
- Publication date Jun 17, 2021
- SANDISK TECHNOLOGIES LLC
- Yanli ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING STRUCTURES FOR ENHANCING...
- Publication number 20210159169
- Publication date May 27, 2021
- SANDISK TECHNOLOGIES LLC
- Dengtao ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BI-DIRECTIONAL SENSING IN A MEMORY
- Publication number 20210134372
- Publication date May 6, 2021
- SANDISK TECHNOLOGIES LLC
- Zhiping Zhang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE MEMORY WITH COUNTERMEASURE FOR PROGRAM DISTURB INCLUDI...
- Publication number 20200234778
- Publication date Jul 23, 2020
- SANDISK TECHNOLOGIES LLC
- Dengtao Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH COUNTERMEASURE FOR PROGRAM DISTURB INCLUDI...
- Publication number 20190378580
- Publication date Dec 12, 2019
- SANDISK TECHNOLOGIES LLC
- Dengtao Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH COUNTERMEASURE FOR PROGRAM DISTURB INCLUDI...
- Publication number 20190378581
- Publication date Dec 12, 2019
- SANDISK TECHNOLOGIES LLC
- Dengtao Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING PARTIALLY SURROUNDING SEL...
- Publication number 20190214395
- Publication date Jul 11, 2019
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Peng-Fei Zhang

Person

Patents Grantslast 30 patents

Adaptations of task-oriented agents using user interactions

Memory device including mixed oxide charge trapping materials and m...

Three dimensional memory device containing dummy word lines and p-n...

Non-volatile memory with one sided phased ramp down after program-v...

Three-dimensional memory device including low-k drain-select-level...

Contextual natural language understanding for conversational agents

Multi-modal spoken language understanding systems

Bi-directional sensing in a memory

Periodic reduced word line bias which increases channel boosting

Hole pre-charge scheme using gate induced drain leakage generation

Three-dimensional memory device containing structures for enhancing...

Three-dimensional memory device containing plural work function wor...

Three-dimensional memory device containing plural work function wor...

System for presentation of audio using wearable device

Non-volatile memory with countermeasure for program disturb includi...

Non-volatile memory with countermeasure for program disturb includi...

Non-volatile memory with countermeasure for program disturb includi...

Three-dimensional memory device including partially surrounding sel...

Three-dimensional memory device containing floating gate select tra...

Three-dimensional memory device with partially discrete charge stor...

Method of fabricating semiconductor devices using shallow trench is...

Patents Applicationslast 30 patents

ASYMMETRIC VREADK TO REDUCE NEIGHBORING WORD LINE INTERFERENCE IN A...

NEGATIVE WORD LINE ENABLED PRE-BOOSTING STRATEGY TO IMPROVE NAND PR...

MEMORY DEVICE INCLUDING AN ELECTRICALLY CONDUCTIVE LAYER WITH A TAP...

CHANNEL PRE-CHARGE PROCESS IN A MEMORY DEVICE

NON-VOLATILE MEMORY WITH DUMMY WORD LINE ASSISTED PRE-CHARGE

GATE-INDUCED DRAIN LEAKAGE PRE-CHARGE IN SUB-BLOCK MODE FOR THREE O...

DUAL-WAY SENSING SCHEME FOR BETTER NEIGHBORING WORD-LINE INTERFERENCE

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING LOW-K DRAIN-SELECT-LEVEL...

NON-VOLATILE MEMORY WITH ONE SIDED PHASED RAMP DOWN AFTER PROGRAM-V...

MEMORY DEVICE INCLUDING MIXED OXIDE CHARGE TRAPPING MATERIALS AND M...

THREE DIMENSIONAL MEMORY DEVICE CONTAINING DUMMY WORD LINES AND P-N...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING LOW-K DRAIN-SELECT-LEVEL...

PERIODIC REDUCED WORD LINE BIAS WHICH INCREASES CHANNEL BOOSTING

HOLE PRE-CHARGE SCHEME USING GATE INDUCED DRAIN LEAKAGE GENERATION

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL WORK FUNCTION WOR...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL WORK FUNCTION WOR...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING STRUCTURES FOR ENHANCING...

BI-DIRECTIONAL SENSING IN A MEMORY

NON-VOLATILE MEMORY WITH COUNTERMEASURE FOR PROGRAM DISTURB INCLUDI...

NON-VOLATILE MEMORY WITH COUNTERMEASURE FOR PROGRAM DISTURB INCLUDI...

NON-VOLATILE MEMORY WITH COUNTERMEASURE FOR PROGRAM DISTURB INCLUDI...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING PARTIALLY SURROUNDING SEL...