Peng Wang

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Epitaxial source/drain structure and method
- Patent number 12,125,879
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacture
- Patent number 12,080,597
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-Chih Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch profile control of gate contact opening
- Patent number 12,057,345
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-Chih Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source and drain structures in semiconductor devices
- Patent number 12,057,503
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and manufacturing method thereof
- Patent number 11,967,526
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-Chih Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch profile control of via opening
- Patent number 11,942,371
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-Chih Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with conductive via structure and me...
- Patent number 11,810,919
- Issue date Nov 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jyun-De Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial source/drain structure and method
- Patent number 11,784,222
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and manufacturing method thereof
- Patent number 11,728,212
- Issue date Aug 15, 2023
- TAIWAN SEMICONDCUTOR MANUFACTURING COMPANY, LTD.
- Te-Chih Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch profile control of gate contact opening
- Patent number 11,705,491
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-Chih Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate structure cutting process
- Patent number 11,694,931
- Issue date Jul 4, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch profile control of gate contact opening
- Patent number 11,581,218
- Issue date Feb 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-Chih Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial source/drain structure and method
- Patent number 11,222,951
- Issue date Jan 11, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective NFET/PFET recess of source/drain regions
- Patent number 11,139,211
- Issue date Oct 5, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yun-Min Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source and drain structures in semiconductor devices
- Patent number 11,038,054
- Issue date Jun 15, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate structure cutting process
- Patent number 10,930,564
- Issue date Feb 23, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for shrinking openings in forming integrated circuits
- Patent number 10,867,842
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Peng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective NFET/PFET recess of source/drain regions
- Patent number 10,553,492
- Issue date Feb 4, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yun-Min Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source and drain structures in semiconductor devices
- Patent number 10,510,883
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EPITAXIAL SOURCE/DRAIN STRUCTURE AND METHOD
- Publication number 20240379762
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240363408
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Chih HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric Source and Drain Structures in Semiconductor Devices
- Publication number 20240363749
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH CONTROLLED GATE CONTACT PROFILE
- Publication number 20240332063
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Chih HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240266218
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-Chih HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE VIA STRUCTURE
- Publication number 20240079409
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jyun-De WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH PROFILE CONTROL OF VIA OPENING
- Publication number 20240030070
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Chih HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SOURCE/DRAIN STRUCTURE AND METHOD
- Publication number 20230378270
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE STRUCTURE CUTTING PROCESS
- Publication number 20230352345
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230335435
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Chih HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH PROFILE CONTROL OF GATE CONTACT OPENING
- Publication number 20230326978
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Chih HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH PROFILE CONTROL OF GATE CONTACT OPENING
- Publication number 20230187270
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Chih HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20230047598
- Publication date Feb 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Chih HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE VIA STRUCTURE AND ME...
- Publication number 20220406777
- Publication date Dec 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jyun-De WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Source/Drain Structure and Method
- Publication number 20220130961
- Publication date Apr 28, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20220102211
- Publication date Mar 31, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Chih HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH PROFILE CONTROL OF VIA OPENING
- Publication number 20220102219
- Publication date Mar 31, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Chih HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH PROFILE CONTROL OF GATE CONTACT OPENING
- Publication number 20220102507
- Publication date Mar 31, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Chih HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20220102204
- Publication date Mar 31, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Chih HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH PROFILE CONTROL OF GATE CONTACT OPENING
- Publication number 20220102199
- Publication date Mar 31, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Chih HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric Source and Drain Structures in Semiconductor Devices
- Publication number 20210296497
- Publication date Sep 23, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gate Structure Cutting Process
- Publication number 20210175126
- Publication date Jun 10, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective NFET/PFET Recess of Source/Drain Regions
- Publication number 20200185278
- Publication date Jun 11, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Min Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Shrinking Openings in Forming Integrated Circuits
- Publication number 20200135546
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gate Structure Cutting Process
- Publication number 20200075421
- Publication date Mar 5, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Source/Drain Structure and Method
- Publication number 20200075725
- Publication date Mar 5, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric Source and Drain Structures in Semiconductor Devices
- Publication number 20200006556
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE NFET/PFET RECESS OF SOURCE/DRAIN REGIONS
- Publication number 20190333820
- Publication date Oct 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Min Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC SOURCE AND DRAIN STRUCTURES IN SEMICONDUCTOR DEVICES
- Publication number 20190165171
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien HUANG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Epitaxial source/drain structure and method

Semiconductor devices and methods of manufacture

Etch profile control of gate contact opening

Asymmetric source and drain structures in semiconductor devices

Integrated circuit structure and manufacturing method thereof

Etch profile control of via opening

Semiconductor device structure with conductive via structure and me...

Epitaxial source/drain structure and method

Integrated circuit structure and manufacturing method thereof

Etch profile control of gate contact opening

Metal gate structure cutting process

Etch profile control of gate contact opening

Epitaxial source/drain structure and method

Selective NFET/PFET recess of source/drain regions

Asymmetric source and drain structures in semiconductor devices

Metal gate structure cutting process

Method for shrinking openings in forming integrated circuits

Selective NFET/PFET recess of source/drain regions

Asymmetric source and drain structures in semiconductor devices

Patents Applicationslast 30 patents

EPITAXIAL SOURCE/DRAIN STRUCTURE AND METHOD

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

Asymmetric Source and Drain Structures in Semiconductor Devices

DEVICE WITH CONTROLLED GATE CONTACT PROFILE

INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE VIA STRUCTURE

ETCH PROFILE CONTROL OF VIA OPENING

EPITAXIAL SOURCE/DRAIN STRUCTURE AND METHOD

METAL GATE STRUCTURE CUTTING PROCESS

INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF

ETCH PROFILE CONTROL OF GATE CONTACT OPENING

ETCH PROFILE CONTROL OF GATE CONTACT OPENING

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE VIA STRUCTURE AND ME...

Epitaxial Source/Drain Structure and Method

INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF

ETCH PROFILE CONTROL OF VIA OPENING

ETCH PROFILE CONTROL OF GATE CONTACT OPENING

INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF

ETCH PROFILE CONTROL OF GATE CONTACT OPENING

Asymmetric Source and Drain Structures in Semiconductor Devices

Metal Gate Structure Cutting Process

Selective NFET/PFET Recess of Source/Drain Regions

Method for Shrinking Openings in Forming Integrated Circuits

Metal Gate Structure Cutting Process

Epitaxial Source/Drain Structure and Method

Asymmetric Source and Drain Structures in Semiconductor Devices

SELECTIVE NFET/PFET RECESS OF SOURCE/DRAIN REGIONS

ASYMMETRIC SOURCE AND DRAIN STRUCTURES IN SEMICONDUCTOR DEVICES