PENG-WEI CHU

Person

HSINCHU CITY, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Selective dual silicide formation
- Patent number 11,990,376
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with dual silicide contact structures
- Patent number 11,855,177
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective dual silicide formation
- Patent number 11,482,458
- Issue date Oct 25, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with dual silicide contact structures
- Patent number 11,233,134
- Issue date Jan 25, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 11,031,300
- Issue date Jun 8, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective dual silicide formation
- Patent number 10,978,354
- Issue date Apr 13, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE
- Publication number 20240379457
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- SUNG-LI WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DUAL SILICIDE FORMATION
- Publication number 20240304499
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES
- Publication number 20240088261
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Dual Silicide Formation
- Publication number 20220375797
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES
- Publication number 20220181464
- Publication date Jun 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210280472
- Publication date Sep 9, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- SUNG-LI WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Dual Silicide Formation
- Publication number 20210225712
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES
- Publication number 20210193816
- Publication date Jun 24, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Dual Silicide Formation
- Publication number 20200294864
- Publication date Sep 17, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20200043805
- Publication date Feb 6, 2020
- Taiwan Semiconductor Manufacturing company Ltd.
- SUNG-LI WANG
- H01 - BASIC ELECTRIC ELEMENTS

PENG-WEI CHU

Person

Patents Grantslast 30 patents

Selective dual silicide formation

Field effect transistors with dual silicide contact structures

Selective dual silicide formation

Field effect transistors with dual silicide contact structures

Semiconductor structure and method for manufacturing the same

Selective dual silicide formation

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE

SELECTIVE DUAL SILICIDE FORMATION

FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES

Selective Dual Silicide Formation

FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Selective Dual Silicide Formation

FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES

Selective Dual Silicide Formation

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME