Peng Xu

Person

Sleepy Hollow, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
System and methods for training robot policies in the real world
- Patent number 11,992,945
- Issue date May 28, 2024
- Google LLC
- Jie Tan
- B25 - HAND TOOLS PORTABLE POWER-DRIVEN TOOLS MANIPULATORS
Information Patent Grant
Nanosheet transistor
- Patent number 11,901,438
- Issue date Feb 13, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Forming a sacrificial liner for dual channel devices
- Patent number 11,894,462
- Issue date Feb 6, 2024
- Adeia Semiconductor Solutions LLC
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional field effect device
- Patent number 11,817,502
- Issue date Nov 14, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid-channel nano-sheet FETs
- Patent number 11,798,852
- Issue date Oct 24, 2023
- TESSERA LLC
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having wrap-around source/drain contacts
- Patent number 11,677,026
- Issue date Jun 13, 2023
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Probabilistic-based lane-change decision making and motion planning...
- Patent number 11,608,067
- Issue date Mar 21, 2023
- Honda Motor Co., Ltd.
- Peng Xu
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Resistive random-access memory
- Patent number 11,594,676
- Issue date Feb 28, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned two-dimensional material transistors
- Patent number 11,569,347
- Issue date Jan 31, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain epitaxy and isolation for gate structures
- Patent number 11,495,688
- Issue date Nov 8, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of fin field effect transistors utilizing different fin...
- Patent number 11,444,083
- Issue date Sep 13, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inverse T-shaped contact structures having air gap spacers
- Patent number 11,362,193
- Issue date Jun 14, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained and unstrained semiconductor device features formed on the...
- Patent number 11,355,588
- Issue date Jun 7, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Homogeneous densification of fill layers for controlled reveal of v...
- Patent number 11,342,230
- Issue date May 24, 2022
- Tessera, Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact resistance reduction
- Patent number 11,335,773
- Issue date May 17, 2022
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistors with thin inner spacers and tight pitch gate
- Patent number 11,329,143
- Issue date May 10, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for forming a vertical field-effect transistor
- Patent number 11,302,799
- Issue date Apr 12, 2022
- International Business Machines Corporation
- Peng Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid-channel nano-sheet FETS
- Patent number 11,276,612
- Issue date Mar 15, 2022
- Tessera, Inc.
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistors with multiple gate lengths
- Patent number 11,251,267
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional field effect device
- Patent number 11,222,981
- Issue date Jan 11, 2022
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer for nanosheet transistors
- Patent number 11,195,912
- Issue date Dec 7, 2021
- International Business Machines Corporation
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Forming a sacrificial liner for dual channel devices
- Patent number 11,189,729
- Issue date Nov 30, 2021
- Tessera, Inc.
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-limiting liners for increasing contact trench volume in n-type...
- Patent number 11,183,430
- Issue date Nov 23, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional field effect device
- Patent number 11,183,593
- Issue date Nov 23, 2021
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of air gap spacers for reducing parasitic capacitance
- Patent number 11,183,577
- Issue date Nov 23, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VFET devices with ILD protection
- Patent number 11,164,959
- Issue date Nov 2, 2021
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of inner spacer on nanosheet MOSFET
- Patent number 11,158,730
- Issue date Oct 26, 2021
- International Business Machines Corporation
- Zhenxing Bi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Forming a fin cut in a hardmask
- Patent number 11,145,508
- Issue date Oct 12, 2021
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral semiconductor nanotube with hexagonal shape
- Patent number 11,120,991
- Issue date Sep 14, 2021
- International Business Machines Corporation
- Juntao Li
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanosheet transistors with different gate dielectrics and workfunct...
- Patent number 11,101,182
- Issue date Aug 24, 2021
- International Business Machines Corporation
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
NANOSHEET TRANSISTOR
- Publication number 20240413224
- Publication date Dec 12, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES
- Publication number 20240363755
- Publication date Oct 31, 2024
- Adeia Semiconductor Solutions LLC
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID-CHANNEL NANO-SHEET FETS
- Publication number 20240274475
- Publication date Aug 15, 2024
- Adeia Semiconductor Solutions LLC
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING WRAP-AROUND SOURCE/DRAIN CONTACTS
- Publication number 20230275152
- Publication date Aug 31, 2023
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID-CHANNEL NANO-SHEET FETS
- Publication number 20220157666
- Publication date May 19, 2022
- Tessera, Inc.
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHODS FOR TRAINING ROBOT POLICIES IN THE REAL WORLD
- Publication number 20220143819
- Publication date May 12, 2022
- Google LLC
- Jie Tan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THREE-DIMENSIONAL FIELD EFFECT DEVICE
- Publication number 20220130992
- Publication date Apr 28, 2022
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES
- Publication number 20220069118
- Publication date Mar 3, 2022
- Tessera, Inc.
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROBABILISTIC-BASED LANE-CHANGE DECISION MAKING AND MOTION PLANNING...
- Publication number 20220048513
- Publication date Feb 17, 2022
- Honda Motor Co., Ltd.
- Peng Xu
- B60 - VEHICLES IN GENERAL
Information Patent Application
SELF-LIMITING LINERS FOR INCREASING CONTACT TRENCH VOLUME IN N-TYPE...
- Publication number 20220005735
- Publication date Jan 6, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN EPITAXY AND ISOLATION FOR GATE STRUCTURES
- Publication number 20210288184
- Publication date Sep 16, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR
- Publication number 20210280688
- Publication date Sep 9, 2021
- Tessera, Inc.
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
SELF-ALIGNED TWO-DIMENSIONAL MATERIAL TRANSISTORS
- Publication number 20210233996
- Publication date Jul 29, 2021
- International Business Machines Corporation
- Chen ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY
- Publication number 20210151670
- Publication date May 20, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL FIELD EFFECT DEVICE
- Publication number 20210118873
- Publication date Apr 22, 2021
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF AN AIR GAP SPACER USING SACRIFICIAL SPACER LAYER
- Publication number 20200373204
- Publication date Nov 26, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR
- Publication number 20200357895
- Publication date Nov 12, 2020
- Tessera, Inc.
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
FIELD-EFFECT TRANSISTOR HAVING DUAL CHANNELS
- Publication number 20200328211
- Publication date Oct 15, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED TWO-DIMENSIONAL MATERIAL TRANSISTORS
- Publication number 20200295132
- Publication date Sep 17, 2020
- International Business Machines Corporation
- Chen ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN EPITAXY AND ISOLATION FOR GATE STRUCTURES
- Publication number 20200295198
- Publication date Sep 17, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING WRAP-AROUND SOURCE/DRAIN CONTACTS
- Publication number 20200287039
- Publication date Sep 10, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF FIN FIELD EFFECT TRANSISTORS UTILIZING DIFFERENT FIN...
- Publication number 20200266195
- Publication date Aug 20, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATE TWO-DIMENSIONAL MATERIAL TRANSISTOR
- Publication number 20200259009
- Publication date Aug 13, 2020
- International Business Machines Corporation
- Peng Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Semiconductor Gate Cut
- Publication number 20200258745
- Publication date Aug 13, 2020
- International Business Machines Corporation
- Peng Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY
- Publication number 20200227633
- Publication date Jul 16, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED AND UNSTRAINED SEMICONDUCTOR DEVICE FEATURES FORMED ON THE...
- Publication number 20200212181
- Publication date Jul 2, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT DEVICE FABRICATION WITH EXTENDED HEIGHT GATES
- Publication number 20200194563
- Publication date Jun 18, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF AIR GAP SPACERS FOR REDUCING PARASITIC CAPACITANCE
- Publication number 20200152759
- Publication date May 14, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FINS WITH DIELECTRIC ISOLATION AT FIN BOTTOM
- Publication number 20200152520
- Publication date May 14, 2020
- International Business Machines Corporation
- Peng Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF AIR GAP SPACERS FOR REDUCING PARASITIC CAPACITANCE
- Publication number 20200152760
- Publication date May 14, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

System and methods for training robot policies in the real world

Nanosheet transistor

Forming a sacrificial liner for dual channel devices

Three-dimensional field effect device

Hybrid-channel nano-sheet FETs

Transistor having wrap-around source/drain contacts

Probabilistic-based lane-change decision making and motion planning...

Resistive random-access memory

Self-aligned two-dimensional material transistors

Source and drain epitaxy and isolation for gate structures

Fabrication of fin field effect transistors utilizing different fin...

Inverse T-shaped contact structures having air gap spacers

Strained and unstrained semiconductor device features formed on the...

Homogeneous densification of fill layers for controlled reveal of v...

Trench contact resistance reduction

Nanosheet transistors with thin inner spacers and tight pitch gate

Method and structure for forming a vertical field-effect transistor

Hybrid-channel nano-sheet FETS

Vertical transistors with multiple gate lengths

Three-dimensional field effect device

Inner spacer for nanosheet transistors

Forming a sacrificial liner for dual channel devices

Self-limiting liners for increasing contact trench volume in n-type...

Three-dimensional field effect device

Formation of air gap spacers for reducing parasitic capacitance

VFET devices with ILD protection

Formation of inner spacer on nanosheet MOSFET

Forming a fin cut in a hardmask

Lateral semiconductor nanotube with hexagonal shape

Nanosheet transistors with different gate dielectrics and workfunct...

Patents Applicationslast 30 patents

NANOSHEET TRANSISTOR

FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES

HYBRID-CHANNEL NANO-SHEET FETS

TRANSISTOR HAVING WRAP-AROUND SOURCE/DRAIN CONTACTS

HYBRID-CHANNEL NANO-SHEET FETS

SYSTEM AND METHODS FOR TRAINING ROBOT POLICIES IN THE REAL WORLD

THREE-DIMENSIONAL FIELD EFFECT DEVICE

FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES

PROBABILISTIC-BASED LANE-CHANGE DECISION MAKING AND MOTION PLANNING...

SELF-LIMITING LINERS FOR INCREASING CONTACT TRENCH VOLUME IN N-TYPE...

SOURCE AND DRAIN EPITAXY AND ISOLATION FOR GATE STRUCTURES

NANOSHEET TRANSISTOR

SELF-ALIGNED TWO-DIMENSIONAL MATERIAL TRANSISTORS

RESISTIVE RANDOM-ACCESS MEMORY

THREE-DIMENSIONAL FIELD EFFECT DEVICE

FORMATION OF AN AIR GAP SPACER USING SACRIFICIAL SPACER LAYER

NANOSHEET TRANSISTOR

FIELD-EFFECT TRANSISTOR HAVING DUAL CHANNELS

SELF-ALIGNED TWO-DIMENSIONAL MATERIAL TRANSISTORS

SOURCE AND DRAIN EPITAXY AND ISOLATION FOR GATE STRUCTURES

TRANSISTOR HAVING WRAP-AROUND SOURCE/DRAIN CONTACTS

FABRICATION OF FIN FIELD EFFECT TRANSISTORS UTILIZING DIFFERENT FIN...

DOUBLE GATE TWO-DIMENSIONAL MATERIAL TRANSISTOR

Self-Aligned Semiconductor Gate Cut

RESISTIVE RANDOM-ACCESS MEMORY

STRAINED AND UNSTRAINED SEMICONDUCTOR DEVICE FEATURES FORMED ON THE...

GATE CUT DEVICE FABRICATION WITH EXTENDED HEIGHT GATES

FORMATION OF AIR GAP SPACERS FOR REDUCING PARASITIC CAPACITANCE

SEMICONDUCTOR FINS WITH DIELECTRIC ISOLATION AT FIN BOTTOM

FORMATION OF AIR GAP SPACERS FOR REDUCING PARASITIC CAPACITANCE