Pengfei Wu

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Stoneham, MA, US

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Patents Grantslast 30 patents

Information Patent Grant
Heavily doped buried layer to reduce MOSFET off capacitance
- Patent number 11,145,722
- Issue date Oct 12, 2021
- Analog Devices, Inc.
- Pengfei Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH FREQUENCY HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES
- Publication number 20240405105
- Publication date Dec 5, 2024
- Analog Devices, Inc.
- F. Jacob Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAVILY DOPED BURIED LAYER TO REDUCE MOSFET OFF CAPACITANCE
- Publication number 20200286997
- Publication date Sep 10, 2020
- Analog Devices, Inc.
- Pengfei Wu
- H01 - BASIC ELECTRIC ELEMENTS