Pengyuan Zheng

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device with low density thermal barrier
- Patent number 11,984,382
- Issue date May 14, 2024
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory with optimized resistive layers
- Patent number 11,778,837
- Issue date Oct 3, 2023
- Micron Technology, Inc.
- Lei Wei
Information Patent Grant
Memory device with high resistivity thermal barrier
- Patent number 11,721,606
- Issue date Aug 8, 2023
- Micron Technology Inc.
- David Ross Economy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite electrode material chemistry
- Patent number 11,659,778
- Issue date May 23, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
WSiGe electrode structures for memory devices, and associated devic...
- Patent number 11,631,811
- Issue date Apr 18, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of electrodes for memory cells
- Patent number 11,545,623
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory with optimized resistive layers
- Patent number 11,380,732
- Issue date Jul 5, 2022
- Micron Technology, Inc.
- Lei Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells
- Patent number 11,349,068
- Issue date May 31, 2022
- Intel Corporation
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with low density thermal barrier
- Patent number 11,158,561
- Issue date Oct 26, 2021
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atom implantation for reduction of compressive stress
- Patent number 11,011,378
- Issue date May 18, 2021
- Micron Technology, Inc.
- Yiping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with high resistivity thermal barrier
- Patent number 10,964,621
- Issue date Mar 30, 2021
- Micron Technology, Inc.
- David Ross Economy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of electrodes for memory cells
- Patent number 10,825,987
- Issue date Nov 3, 2020
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE WITH LOW DENSITY THERMAL BARRIER
- Publication number 20240347418
- Publication date Oct 17, 2024
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...
- Publication number 20240071498
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Yongjun Jeff Hu
- G11 - INFORMATION STORAGE
Information Patent Application
STRESS MITIGATION FOR THREE-DIMENSIONAL METAL CONTACTS
- Publication number 20240071819
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Chandra S. Tiwari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...
- Publication number 20240071931
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Tom George
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE STACKS FOR CMOS SCALING
- Publication number 20240040790
- Publication date Feb 1, 2024
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTR...
- Publication number 20230397423
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
Information Patent Application
Integrated Circuitry, Memory Arrays Comprising Strings Of Memory Ce...
- Publication number 20230389314
- Publication date Nov 30, 2023
- Micron Technology, Inc.
- Adam Barton
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH OPTIMIZED RESISTIVE LAYERS
- Publication number 20220406847
- Publication date Dec 22, 2022
- Micron Technology, Inc.
- Lei Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODE STRUCTURES FOR MEMORY DEVICES, AND ASSOCIATED DEVICES AND...
- Publication number 20220359822
- Publication date Nov 10, 2022
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY WITH OPTIMIZED RESISTIVE LAYERS
- Publication number 20220037403
- Publication date Feb 3, 2022
- Micron Technology, Inc.
- Lei Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH LOW DENSITY THERMAL BARRIER
- Publication number 20220020662
- Publication date Jan 20, 2022
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH HIGH RESISTIVITY THERMAL BARRIER
- Publication number 20210287960
- Publication date Sep 16, 2021
- Micron Technology, Inc.
- David Ross Economy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE ELECTRODE MATERIAL CHEMISTRY
- Publication number 20210249598
- Publication date Aug 12, 2021
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF ELECTRODES FOR MEMORY CELLS
- Publication number 20210098697
- Publication date Apr 1, 2021
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY STRUCTURES AND DEVICES
- Publication number 20210050512
- Publication date Feb 18, 2021
- Intel Corporation
- Davide Fugazza
- G11 - INFORMATION STORAGE
Information Patent Application
ATOM IMPLANTATION FOR REDUCTION OF COMPRESSIVE STRESS
- Publication number 20210005455
- Publication date Jan 7, 2021
- Micron Technology, Inc.
- Yiping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH LOW DENSITY THERMAL BARRIER
- Publication number 20200350226
- Publication date Nov 5, 2020
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH HIGH RESISTIVITY THERMAL BARRIER
- Publication number 20200350225
- Publication date Nov 5, 2020
- Micron Technology, Inc.
- David Ross Economy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF ELECTRODES FOR MEMORY CELLS
- Publication number 20190378975
- Publication date Dec 12, 2019
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS
- Publication number 20190198756
- Publication date Jun 27, 2019
- Intel Corporation
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS

Pengyuan Zheng

Person

Patents Grantslast 30 patents

Memory device with low density thermal barrier

Memory with optimized resistive layers

Memory device with high resistivity thermal barrier

Composite electrode material chemistry

WSiGe electrode structures for memory devices, and associated devic...

Fabrication of electrodes for memory cells

Memory with optimized resistive layers

Memory cells

Memory device with low density thermal barrier

Atom implantation for reduction of compressive stress

Memory device with high resistivity thermal barrier

Fabrication of electrodes for memory cells

Patents Applicationslast 30 patents

MEMORY DEVICE WITH LOW DENSITY THERMAL BARRIER

Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...

STRESS MITIGATION FOR THREE-DIMENSIONAL METAL CONTACTS

Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...

METAL GATE STACKS FOR CMOS SCALING

METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTR...

Integrated Circuitry, Memory Arrays Comprising Strings Of Memory Ce...

MEMORY WITH OPTIMIZED RESISTIVE LAYERS

ELECTRODE STRUCTURES FOR MEMORY DEVICES, AND ASSOCIATED DEVICES AND...

MEMORY WITH OPTIMIZED RESISTIVE LAYERS

MEMORY DEVICE WITH LOW DENSITY THERMAL BARRIER

MEMORY DEVICE WITH HIGH RESISTIVITY THERMAL BARRIER

COMPOSITE ELECTRODE MATERIAL CHEMISTRY

FABRICATION OF ELECTRODES FOR MEMORY CELLS

PHASE CHANGE MEMORY STRUCTURES AND DEVICES

ATOM IMPLANTATION FOR REDUCTION OF COMPRESSIVE STRESS

MEMORY DEVICE WITH LOW DENSITY THERMAL BARRIER

MEMORY DEVICE WITH HIGH RESISTIVITY THERMAL BARRIER

FABRICATION OF ELECTRODES FOR MEMORY CELLS

MEMORY CELLS