Pernell Dongmo

Person

Essex Junction, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Avalanche photodiode
- Patent number 11,322,639
- Issue date May 3, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Mark D. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors
- Patent number 11,195,925
- Issue date Dec 7, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with an inverted crystalline bou...
- Patent number 10,818,772
- Issue date Oct 27, 2020
- GLOBALFOUNDRIES Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors with a self-aligned emitter and base
- Patent number 10,777,668
- Issue date Sep 15, 2020
- GLOBALFOUNDRIES Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with airgaps
- Patent number 10,720,494
- Issue date Jul 21, 2020
- GLOBALFOUNDRIES Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned bipolar junction transistors with a base grown in a di...
- Patent number 10,134,880
- Issue date Nov 20, 2018
- GLOBALFOUNDRIES Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTORS HAVING BARRIER LINERS AND INTEGR...
- Publication number 20230155016
- Publication date May 18, 2023
- GLOBALFOUNDRIES U.S. Inc.
- RAMSEY HAZBUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE PHOTODIODE
- Publication number 20210320217
- Publication date Oct 14, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Mark D. LEVY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS
- Publication number 20210091195
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. HOLT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH A SELF-ALIGNED EMITTER AND BASE
- Publication number 20200066885
- Publication date Feb 27, 2020
- GLOBALFOUNDRIES INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH AN INVERTED CRYSTALLINE BOU...
- Publication number 20190326411
- Publication date Oct 24, 2019
- GLOBALFOUNDRIES INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH AIRGAPS
- Publication number 20190229184
- Publication date Jul 25, 2019
- GLOBALFOUNDRIES INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BIPOLAR JUNCTION TRANSISTORS WITH A BASE GROWN IN A DI...
- Publication number 20180286968
- Publication date Oct 4, 2018
- GLOBALFOUNDRIES INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS

Pernell Dongmo

Person

Patents Grantslast 30 patents

Avalanche photodiode

Heterojunction bipolar transistors

Heterojunction bipolar transistors with an inverted crystalline bou...

Bipolar junction transistors with a self-aligned emitter and base

Field-effect transistors with airgaps

Self-aligned bipolar junction transistors with a base grown in a di...

Patents Applicationslast 30 patents

HIGH ELECTRON MOBILITY TRANSISTORS HAVING BARRIER LINERS AND INTEGR...

AVALANCHE PHOTODIODE

HETEROJUNCTION BIPOLAR TRANSISTORS

BIPOLAR JUNCTION TRANSISTORS WITH A SELF-ALIGNED EMITTER AND BASE

HETEROJUNCTION BIPOLAR TRANSISTORS WITH AN INVERTED CRYSTALLINE BOU...

FIELD-EFFECT TRANSISTORS WITH AIRGAPS

SELF-ALIGNED BIPOLAR JUNCTION TRANSISTORS WITH A BASE GROWN IN A DI...