Perng-Fei Yuh

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory devices with diode-connected MOS
- Patent number 12,230,338
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with source line control
- Patent number 12,217,822
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and method of operating the same
- Patent number 12,190,949
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuits and devices, and methods thereof
- Patent number 12,183,397
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yih Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiple stack high voltage circuit for memory
- Patent number 12,094,558
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile static random access memory (nvSRAM) with multiple mag...
- Patent number 11,984,164
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices with diode-connected MOS
- Patent number 11,955,191
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with source line control
- Patent number 11,776,595
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices with diode-connected MOS
- Patent number 11,688,481
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile static random access memory (nvSRAM) with multiple mag...
- Patent number 11,657,873
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and method of operating the same
- Patent number 11,651,819
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile static random access memory (nvSRAM) with multiple mag...
- Patent number 11,107,530
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CIRCUITS AND DEVICES, AND METHODS THEREOF
- Publication number 20250069659
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yih WANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY REFRESH
- Publication number 20250061934
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei YUH
- G11 - INFORMATION STORAGE
Information Patent Application
PUSH-PULL LOW-DROPOUT (LDO) VOLTAGE REGULATOR
- Publication number 20240402744
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei YUH
- G05 - CONTROLLING REGULATING
Information Patent Application
Multiple Stack High Voltage Circuit for Memory
- Publication number 20240386919
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STATIC RANDOM ACCESS MEMORY (NVSRAM) WITH MULTIPLE MAG...
- Publication number 20240296887
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIODE-CONNECTED MOS
- Publication number 20240249784
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH SOURCE LINE CONTROL
- Publication number 20230386536
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
COMPUTE-IN MEMORY (CIM) DEVICE AND COMPUTING METHOD THEREOF
- Publication number 20230333814
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jui-Che TSAI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIODE-CONNECTED MOS
- Publication number 20230307074
- Publication date Sep 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STATIC RANDOM ACCESS MEMORY (nvSRAM) WITH MULTIPLE MAG...
- Publication number 20230298665
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME
- Publication number 20230282278
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei YUH
- G11 - INFORMATION STORAGE
Information Patent Application
Multiple Stack High Voltage Circuit for Memory
- Publication number 20230282250
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH SOURCE LINE CONTROL
- Publication number 20230238042
- Publication date Jul 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUITS AND DEVICES, AND METHODS THEREOF
- Publication number 20220366984
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yih WANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIODE-CONNECTED MOS
- Publication number 20220328116
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME
- Publication number 20220028453
- Publication date Jan 27, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei YUH
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STATIC RANDOM ACCESS MEMORY (nvSRAM) WITH MULTIPLE MAG...
- Publication number 20210383867
- Publication date Dec 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STATIC RANDOM ACCESS MEMORY (nvSRAM) WITH MULTIPLE MAG...
- Publication number 20210201997
- Publication date Jul 1, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE

Perng-Fei Yuh

Person

Patents Grantslast 30 patents

Semiconductor memory devices with diode-connected MOS

Memory device with source line control

Memory circuit and method of operating the same

Memory circuits and devices, and methods thereof

Multiple stack high voltage circuit for memory

Non-volatile static random access memory (nvSRAM) with multiple mag...

Semiconductor memory devices with diode-connected MOS

Memory device with source line control

Semiconductor memory devices with diode-connected MOS

Non-volatile static random access memory (nvSRAM) with multiple mag...

Memory circuit and method of operating the same

Non-volatile static random access memory (nvSRAM) with multiple mag...

Patents Applicationslast 30 patents

MEMORY CIRCUITS AND DEVICES, AND METHODS THEREOF

MEMORY REFRESH

PUSH-PULL LOW-DROPOUT (LDO) VOLTAGE REGULATOR

Multiple Stack High Voltage Circuit for Memory

NON-VOLATILE STATIC RANDOM ACCESS MEMORY (NVSRAM) WITH MULTIPLE MAG...

SEMICONDUCTOR MEMORY DEVICES WITH DIODE-CONNECTED MOS

MEMORY DEVICE WITH SOURCE LINE CONTROL

COMPUTE-IN MEMORY (CIM) DEVICE AND COMPUTING METHOD THEREOF

SEMICONDUCTOR MEMORY DEVICES WITH DIODE-CONNECTED MOS

NON-VOLATILE STATIC RANDOM ACCESS MEMORY (nvSRAM) WITH MULTIPLE MAG...

MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME

Multiple Stack High Voltage Circuit for Memory

MEMORY DEVICE WITH SOURCE LINE CONTROL

MEMORY CIRCUITS AND DEVICES, AND METHODS THEREOF

SEMICONDUCTOR MEMORY DEVICES WITH DIODE-CONNECTED MOS

MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME

NON-VOLATILE STATIC RANDOM ACCESS MEMORY (nvSRAM) WITH MULTIPLE MAG...

NON-VOLATILE STATIC RANDOM ACCESS MEMORY (nvSRAM) WITH MULTIPLE MAG...