Perrine BATUDE

Person

Dijon, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional microelectronic circuit with optimised distributi...
- Patent number 12,154,930
- Issue date Nov 26, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Gilles Sicard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor formed in sequential 3D technology
- Patent number 11,888,007
- Issue date Jan 30, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Lina Kadura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an optoelectronic device comprising a plura...
- Patent number 11,658,260
- Issue date May 23, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Perrine Batude
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an optoelectronic device comprising a plura...
- Patent number 11,552,125
- Issue date Jan 10, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Perrine Batude
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D circuit provided with mesa isolation for the ground plane zone
- Patent number 11,139,209
- Issue date Oct 5, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Perrine Batude
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production of a 3D circuit with upper level transistor provided wit...
- Patent number 11,011,425
- Issue date May 18, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Perrine Batude
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D circuit transistors with flipped gate
- Patent number 10,651,202
- Issue date May 12, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Francois Andrieu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing pairs of CMOS transistors of the “fin-FET”...
- Patent number 10,586,740
- Issue date Mar 10, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Benoit Mathieu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with controlled overlap of access regions
- Patent number 10,553,702
- Issue date Feb 4, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Perrine Batude
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a dopant transistor located vertically on t...
- Patent number 10,497,627
- Issue date Dec 3, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Nicolas Posseme
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a plurality of active layers and method o...
- Patent number 10,319,628
- Issue date Jun 11, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Fabien Deprat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a transistor having a source and a drain obtained...
- Patent number 10,170,621
- Issue date Jan 1, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for doping source and drain regions of a transistor by means...
- Patent number 9,966,453
- Issue date May 8, 2018
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of a stack of electronic devices
- Patent number 9,779,982
- Issue date Oct 3, 2017
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Perrine Batude
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing strained semi-conductor blocks on the insulati...
- Patent number 9,761,607
- Issue date Sep 12, 2017
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a field effect transistor including forming a...
- Patent number 9,502,566
- Issue date Nov 22, 2016
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Claire Fenouillet-Beranger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming doped areas under transistor spacers
- Patent number 9,379,213
- Issue date Jun 28, 2016
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Perrine Batude
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a transistor in which the strain applied t...
- Patent number 9,343,375
- Issue date May 17, 2016
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Perrine Batude
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recrystallization of source and drain blocks from above
- Patent number 9,246,006
- Issue date Jan 26, 2016
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Perrine Batude
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a 3D integrated circuit
- Patent number 9,018,078
- Issue date Apr 28, 2015
- STMicroelectronics S.A.
- Benoit Sklenard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with electrostatically coupled MOS transistors a...
- Patent number 8,853,785
- Issue date Oct 7, 2014
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Emmanuel Augendre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a via contacting several levels of semiconductor...
- Patent number 8,722,471
- Issue date May 13, 2014
- STMicroelectronics S.A.
- Perrine Batude
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit with transistors integrated in three dimensions and having...
- Patent number 8,183,630
- Issue date May 22, 2012
- Commissariat a l'Energie Atomique
- Perrine Batude
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM memory cell having transistors integrated at several levels an...
- Patent number 8,013,399
- Issue date Sep 6, 2011
- Commissariat a l'Energie Atomique
- Olivier Thomas
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MICROELECTRONIC CIRCUIT WITH OPTIMISED DISTRIBUTI...
- Publication number 20220093671
- Publication date Mar 24, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Gilles SICARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING AN OPTOELECTRONIC DEVICE COMPRISING A PLURA...
- Publication number 20210376185
- Publication date Dec 2, 2021
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Perrine Batude
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR FORMED IN SEQUENTIAL 3D TECHNOLOGY
- Publication number 20210082983
- Publication date Mar 18, 2021
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Lina Kadura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING AN OPTOELECTRONIC DEVICE COMPRISING A PLURA...
- Publication number 20200203422
- Publication date Jun 25, 2020
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Perrine Batude
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D CIRCUIT PROVIDED WITH MESA ISOLATION FOR THE GROUND PLANE ZONE
- Publication number 20200203229
- Publication date Jun 25, 2020
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Perrine BATUDE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION OF A 3D CIRCUIT WITH UPPER LEVEL TRANSISTOR PROVIDED WIT...
- Publication number 20200035561
- Publication date Jan 30, 2020
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Perrine BATUDE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D CIRCUIT TRANSISTORS WITH FLIPPED GATE
- Publication number 20190157300
- Publication date May 23, 2019
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Francois ANDRIEU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING PAIRS OF CMOS TRANSISTORS OF THE "FIN-FET"...
- Publication number 20190157164
- Publication date May 23, 2019
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Benoit MATHIEU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D CIRCUIT WITH N AND P JUNCTIONLESS TRANSISTORS
- Publication number 20190148367
- Publication date May 16, 2019
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING A PLURALITY OF ACTIVE LAYERS AND METHOD O...
- Publication number 20180090366
- Publication date Mar 29, 2018
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Fabien DEPRAT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A TRANSISTOR HAVING A SOURCE AND A DRAIN OBTAINED...
- Publication number 20170345931
- Publication date Nov 30, 2017
- Shay REBOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CONTROLLED OVERLAP OF ACCESS REGIONS
- Publication number 20170301692
- Publication date Oct 19, 2017
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Perrine BATUDE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A DOPANT TRANSISTOR LOCATED VERTICALLY ON T...
- Publication number 20170221767
- Publication date Aug 3, 2017
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Nicolas POSSEME
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF A STACK OF ELECTRONIC DEVICES
- Publication number 20170178950
- Publication date Jun 22, 2017
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Perrine BATUDE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DOPING SOURCE AND DRAIN REGIONS OF A TRANSISTOR BY MEANS...
- Publication number 20160300927
- Publication date Oct 13, 2016
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay REBOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING AN INTEGRATED CIRCUIT IN THREE DIMENSIONS
- Publication number 20160181155
- Publication date Jun 23, 2016
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Fabien DEPRAT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FABRICATE A TRANSISTOR WHEREIN THE LEVEL OF STRAIN APPLIE...
- Publication number 20160020153
- Publication date Jan 21, 2016
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Perrine BATUDE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING STRAINED SEMI-CONDUCTOR BLOCKS ON THE INSULATI...
- Publication number 20150179665
- Publication date Jun 25, 2015
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Shay REBOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A TRANSISTOR
- Publication number 20150084095
- Publication date Mar 26, 2015
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Claire FENOUILLET-BERANGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECRYSTALLIZATION OF SOURCE AND DRAIN BLOCKS FROM ABOVE
- Publication number 20150044828
- Publication date Feb 12, 2015
- Commisariat A L'Energie Atomique ET Aux Ene Alt
- Perrine BATUDE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING DOPED AREAS UNDER TRANSISTOR SPACERS
- Publication number 20150044841
- Publication date Feb 12, 2015
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Perrine BATUDE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING A JUNCTIONLESS DEPLETION-MODE FET DEVICE
- Publication number 20130203248
- Publication date Aug 8, 2013
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Thomas Ernst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D INTEGRATED CIRCUIT
- Publication number 20130193550
- Publication date Aug 1, 2013
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Benoit Sklenard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A VIA CONTACTING SEVERAL LEVELS OF SEMICONDUCTOR...
- Publication number 20130196500
- Publication date Aug 1, 2013
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Perrine Batude
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH ELECTROSTATICALLY COUPLED MOS TRANSISTORS A...
- Publication number 20110147849
- Publication date Jun 23, 2011
- COMMISS. A L'ENERGIE ATOM ET AUX ENERG ALTERNA
- Emmanuel AUGENDRE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM MEMORY CELL HAVING TRANSISTORS INTEGRATED AT SEVERAL LEVELS AN...
- Publication number 20090294861
- Publication date Dec 3, 2009
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Olivier THOMAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT WITH TRANSISTORS INTEGRATED IN THREE DIMENSIONS AND HAVING...
- Publication number 20090294822
- Publication date Dec 3, 2009
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Perrine Batude
- H01 - BASIC ELECTRIC ELEMENTS

Perrine BATUDE

Person

Patents Grantslast 30 patents

Three-dimensional microelectronic circuit with optimised distributi...

Image sensor formed in sequential 3D technology

Method of manufacturing an optoelectronic device comprising a plura...

Method of manufacturing an optoelectronic device comprising a plura...

3D circuit provided with mesa isolation for the ground plane zone

Production of a 3D circuit with upper level transistor provided wit...

3D circuit transistors with flipped gate

Method for manufacturing pairs of CMOS transistors of the “fin-FET”...

Transistor with controlled overlap of access regions

Method of manufacturing a dopant transistor located vertically on t...

Integrated circuit having a plurality of active layers and method o...

Method of making a transistor having a source and a drain obtained...

Method for doping source and drain regions of a transistor by means...

Fabrication method of a stack of electronic devices

Method for producing strained semi-conductor blocks on the insulati...

Method for producing a field effect transistor including forming a...

Method for forming doped areas under transistor spacers

Method for manufacturing a transistor in which the strain applied t...

Recrystallization of source and drain blocks from above

Method of making a 3D integrated circuit

Integrated circuit with electrostatically coupled MOS transistors a...

Method for forming a via contacting several levels of semiconductor...

Circuit with transistors integrated in three dimensions and having...

SRAM memory cell having transistors integrated at several levels an...

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MICROELECTRONIC CIRCUIT WITH OPTIMISED DISTRIBUTI...

METHOD OF MANUFACTURING AN OPTOELECTRONIC DEVICE COMPRISING A PLURA...

IMAGE SENSOR FORMED IN SEQUENTIAL 3D TECHNOLOGY

METHOD OF MANUFACTURING AN OPTOELECTRONIC DEVICE COMPRISING A PLURA...

3D CIRCUIT PROVIDED WITH MESA ISOLATION FOR THE GROUND PLANE ZONE

PRODUCTION OF A 3D CIRCUIT WITH UPPER LEVEL TRANSISTOR PROVIDED WIT...

3D CIRCUIT TRANSISTORS WITH FLIPPED GATE

METHOD FOR MANUFACTURING PAIRS OF CMOS TRANSISTORS OF THE "FIN-FET"...

3D CIRCUIT WITH N AND P JUNCTIONLESS TRANSISTORS

INTEGRATED CIRCUIT HAVING A PLURALITY OF ACTIVE LAYERS AND METHOD O...

METHOD OF MAKING A TRANSISTOR HAVING A SOURCE AND A DRAIN OBTAINED...

TRANSISTOR WITH CONTROLLED OVERLAP OF ACCESS REGIONS

METHOD OF MANUFACTURING A DOPANT TRANSISTOR LOCATED VERTICALLY ON T...

FABRICATION METHOD OF A STACK OF ELECTRONIC DEVICES

METHOD FOR DOPING SOURCE AND DRAIN REGIONS OF A TRANSISTOR BY MEANS...

METHOD FOR MAKING AN INTEGRATED CIRCUIT IN THREE DIMENSIONS

METHOD TO FABRICATE A TRANSISTOR WHEREIN THE LEVEL OF STRAIN APPLIE...

METHOD FOR PRODUCING STRAINED SEMI-CONDUCTOR BLOCKS ON THE INSULATI...

METHOD FOR PRODUCING A TRANSISTOR

RECRYSTALLIZATION OF SOURCE AND DRAIN BLOCKS FROM ABOVE

METHOD FOR FORMING DOPED AREAS UNDER TRANSISTOR SPACERS

INTEGRATED CIRCUIT HAVING A JUNCTIONLESS DEPLETION-MODE FET DEVICE

3D INTEGRATED CIRCUIT

METHOD FOR FORMING A VIA CONTACTING SEVERAL LEVELS OF SEMICONDUCTOR...

INTEGRATED CIRCUIT WITH ELECTROSTATICALLY COUPLED MOS TRANSISTORS A...

SRAM MEMORY CELL HAVING TRANSISTORS INTEGRATED AT SEVERAL LEVELS AN...

CIRCUIT WITH TRANSISTORS INTEGRATED IN THREE DIMENSIONS AND HAVING...