Pete Rodriquez

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Tempe, AZ, US

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Patents Grantslast 30 patents

Information Patent Grant
LDMOS with an improved breakdown performance
- Patent number 11,610,978
- Issue date Mar 21, 2023
- NXP B.V.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite semiconductor device with different channel widths
- Patent number 9,601,614
- Issue date Mar 21, 2017
- NXP USA, INC.
- Won Gi Min
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LDMOS With An Improved Breakdown Performance
- Publication number 20220293771
- Publication date Sep 15, 2022
- NXP B.V.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Semiconductor Device with Different Channel Widths
- Publication number 20160284841
- Publication date Sep 29, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Won Gi Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH NOTCHED GATE
- Publication number 20140332901
- Publication date Nov 13, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS