Peter Baars

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor integration on a silicon-on-insulator substrate
- Patent number 12,113,070
- Issue date Oct 8, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structures with base having varying horizontal w...
- Patent number 11,916,109
- Issue date Feb 27, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended-drain metal-oxide-semiconductor devices with a silicon-ger...
- Patent number 11,888,062
- Issue date Jan 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Felix Holzmüller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage extended drain MOSFET (EDMOS) devices in a high-k meta...
- Patent number 11,705,455
- Issue date Jul 18, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Thorsten E. Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with metal gate and metal field plate...
- Patent number 11,532,742
- Issue date Dec 20, 2022
- GLOBALFOUNDRIES U.S. INC.
- Ketankumar Harishbhai Tailor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to provide conductive field plate over gate st...
- Patent number 11,456,364
- Issue date Sep 27, 2022
- GLOBALFOUNDRIES U.S. INC.
- Ketankumar H. Tailor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integrated high voltage (HV) and medium voltage (MV) field effec...
- Patent number 11,289,598
- Issue date Mar 29, 2022
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential SG/EG spacer integration with equivalent NFET/PFET spa...
- Patent number 11,217,678
- Issue date Jan 4, 2022
- GLOBALFOUNDRIES U.S. Inc.
- George Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with novel spacer structures having novel conf...
- Patent number 11,195,935
- Issue date Dec 7, 2021
- GLOBALFOUNDRIES U.S. INC.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with interconnect to source/drain
- Patent number 10,923,579
- Issue date Feb 16, 2021
- GLOBALFOUNDRIES U.S. INC.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuits constructed from stacked field-effect transistors
- Patent number 10,727,236
- Issue date Jul 28, 2020
- GLOBALFOUNDRIES Inc.
- Nan Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with interconnect to source/drain
- Patent number 10,707,330
- Issue date Jul 7, 2020
- GLOBALFOUNDRIES Inc.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential SG/EG spacer integration with equivalent NFET/PFET spa...
- Patent number 10,522,655
- Issue date Dec 31, 2019
- GLOBALFOUNDRIES Inc.
- George Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap removal for gate electrode structures with reduced complexity
- Patent number 10,475,901
- Issue date Nov 12, 2019
- GLOBALFOUNDRIES Inc.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with self-aligned capacitor device
- Patent number 10,418,364
- Issue date Sep 17, 2019
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FDSOI semiconductor device with contact enhancement layer and metho...
- Patent number 10,347,543
- Issue date Jul 9, 2019
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and manufacturing techniques for reduced aspe...
- Patent number 10,224,251
- Issue date Mar 5, 2019
- GLOBALFOUNDRIES Inc.
- Hans-Peter Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact scheme for landing on different contact area levels
- Patent number 10,157,774
- Issue date Dec 18, 2018
- GLOBALFOUNDRIES Inc.
- Carsten K. Peters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising trench isolation
- Patent number 10,103,067
- Issue date Oct 16, 2018
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor circuit element
- Patent number 10,079,300
- Issue date Sep 18, 2018
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer implant for NZG reliability fix
- Patent number 10,062,619
- Issue date Aug 28, 2018
- GLOBALFOUNDRIES Inc.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including buried capacitive structures and a m...
- Patent number 10,056,369
- Issue date Aug 21, 2018
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET based flash memory cell
- Patent number 10,032,891
- Issue date Jul 24, 2018
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FDSOI-capacitor
- Patent number 9,960,184
- Issue date May 1, 2018
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including buried capacitive structures and a m...
- Patent number 9,929,148
- Issue date Mar 27, 2018
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential SG/EG spacer integration with equivalent NFET/PFET spa...
- Patent number 9,806,170
- Issue date Oct 31, 2017
- GLOBALFOUNDRIES Inc.
- George Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction formation with reduced Ceff for 22nm FDSOI devices
- Patent number 9,793,294
- Issue date Oct 17, 2017
- GLOBALFOUNDRIES Inc.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FDSOI—capacitor
- Patent number 9,735,174
- Issue date Aug 15, 2017
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a nonvolatile memory cell having...
- Patent number 9,673,210
- Issue date Jun 6, 2017
- GLOBALFOUNDRIES Inc.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET based flash memory cell
- Patent number 9,666,589
- Issue date May 30, 2017
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR INTEGRATION ON A SILICON-ON-INSULATOR SUBSTRATE
- Publication number 20230395607
- Publication date Dec 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURES WITH BASE HAVING VARYING HORIZONTAL W...
- Publication number 20230290829
- Publication date Sep 14, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTENDED-DRAIN METAL-OXIDE-SEMICONDUCTOR DEVICES WITH A SILICON-GER...
- Publication number 20230106168
- Publication date Apr 6, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Felix Holzmüller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH METAL GATE AND METAL FIELD PLATE...
- Publication number 20220302306
- Publication date Sep 22, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Ketankumar Harishbhai Tailor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO PROVIDE CONDUCTIVE FIELD PLATE OVER GATE ST...
- Publication number 20220093751
- Publication date Mar 24, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Ketankumar H. Tailor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE EXTENDED DRAIN MOSFET (EDMOS) DEVICES IN A HIGH-K META...
- Publication number 20220020746
- Publication date Jan 20, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Thorsten E. KAMMLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATED HIGH VOLTAGE (HV) AND MEDIUM VOLTAGE (MV) FIELD EFFEC...
- Publication number 20210328055
- Publication date Oct 21, 2021
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Nan WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTERCONNECT TO SOURCE/DRAIN
- Publication number 20200251576
- Publication date Aug 6, 2020
- GLOBALFOUNDRIES INC.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUITS CONSTRUCTED FROM STACKED FIELD-EFFECT TRANSISTORS
- Publication number 20200203355
- Publication date Jun 25, 2020
- GLOBALFOUNDRIES INC.
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPA...
- Publication number 20200083346
- Publication date Mar 12, 2020
- GLOBALFOUNDRIES INC.
- George Robert MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH NOVEL SPACER STRUCTURES HAVING NOVEL CONF...
- Publication number 20190363173
- Publication date Nov 28, 2019
- GLOBALFOUNDRIES INC.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP REMOVAL FOR GATE ELECTRODE STRUCTURES WITH REDUCED COMPLEXITY
- Publication number 20190326409
- Publication date Oct 24, 2019
- GLOBALFOUNDRIES INC.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTERCONNECT TO SOURCE/DRAIN
- Publication number 20190252522
- Publication date Aug 15, 2019
- GLOBALFOUNDRIES INC.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FDSOI SEMICONDUCTOR DEVICE WITH CONTACT ENHANCEMENT LAYER AND METHO...
- Publication number 20190148245
- Publication date May 16, 2019
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICES AND MANUFACTURING METHOD THEREOF
- Publication number 20190051565
- Publication date Feb 14, 2019
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND MANUFACTURING TECHNIQUES FOR REDUCED ASPE...
- Publication number 20190043764
- Publication date Feb 7, 2019
- GLOBALFOUNDRIES INC.
- Hans-Peter Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ELEMENT WITH GATE ELECTRODE OF REDUCED HEIGHT AND RAISED...
- Publication number 20190043963
- Publication date Feb 7, 2019
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BURIED CAPACITIVE STRUCTURES AND A M...
- Publication number 20180240796
- Publication date Aug 23, 2018
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH SELF-ALIGNED CAPACITOR DEVICE
- Publication number 20180061839
- Publication date Mar 1, 2018
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER IMPLANT FOR NZG RELIABILITY FIX
- Publication number 20180047642
- Publication date Feb 15, 2018
- GLOBALFOUNDRIES INC.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPA...
- Publication number 20180012973
- Publication date Jan 11, 2018
- GLOBALFOUNDRIES INC.
- George Robert MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPA...
- Publication number 20170330953
- Publication date Nov 16, 2017
- GLOBALFOUNDRIES INC.
- George Robert MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FDSOI - CAPACITOR
- Publication number 20170317108
- Publication date Nov 2, 2017
- GLOBALFOUNDRIES INC.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET BASED FLASH MEMORY CELL
- Publication number 20170271484
- Publication date Sep 21, 2017
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH BASED CHARGE PUMP DEVICE
- Publication number 20170162557
- Publication date Jun 8, 2017
- GLOBALFOUNDRIES INC.
- Hans-Peter Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CIRCUIT ELEMENT
- Publication number 20170148919
- Publication date May 25, 2017
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL GATE-TO-SOURCE/DRAIN CONNECTION
- Publication number 20170062438
- Publication date Mar 2, 2017
- GLOBALFOUNDRIES INC.
- Hans-Peter Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
E-FUSE IN SOI CONFIGURATION
- Publication number 20160343659
- Publication date Nov 24, 2016
- GLOBALFOUNDRIES INC.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING P-CHANNEL FET DEVICE WITH SIGE CHANNEL
- Publication number 20160315016
- Publication date Oct 27, 2016
- GLOBALFOUNDRIES INC.
- Hans-Peter Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT PRODUCT WITH BULK AND SOI SEMICONDUCTOR DEVICES
- Publication number 20160307926
- Publication date Oct 20, 2016
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS

Peter Baars

Person

Patents Grantslast 30 patents

Transistor integration on a silicon-on-insulator substrate

Bipolar transistor structures with base having varying horizontal w...

Extended-drain metal-oxide-semiconductor devices with a silicon-ger...

High voltage extended drain MOSFET (EDMOS) devices in a high-k meta...

Integrated circuit structure with metal gate and metal field plate...

Structure and method to provide conductive field plate over gate st...

Co-integrated high voltage (HV) and medium voltage (MV) field effec...

Differential SG/EG spacer integration with equivalent NFET/PFET spa...

Semiconductor device with novel spacer structures having novel conf...

Semiconductor device with interconnect to source/drain

Circuits constructed from stacked field-effect transistors

Semiconductor device with interconnect to source/drain

Differential SG/EG spacer integration with equivalent NFET/PFET spa...

Cap removal for gate electrode structures with reduced complexity

Semiconductor device structure with self-aligned capacitor device

FDSOI semiconductor device with contact enhancement layer and metho...

Semiconductor devices and manufacturing techniques for reduced aspe...

Contact scheme for landing on different contact area levels

Semiconductor device comprising trench isolation

Semiconductor circuit element

Air gap spacer implant for NZG reliability fix

Semiconductor device including buried capacitive structures and a m...

FinFET based flash memory cell

FDSOI-capacitor

Semiconductor device including buried capacitive structures and a m...

Differential SG/EG spacer integration with equivalent NFET/PFET spa...

Junction formation with reduced Ceff for 22nm FDSOI devices

FDSOI—capacitor

Semiconductor structure including a nonvolatile memory cell having...

FinFET based flash memory cell

Patents Applicationslast 30 patents

TRANSISTOR INTEGRATION ON A SILICON-ON-INSULATOR SUBSTRATE

BIPOLAR TRANSISTOR STRUCTURES WITH BASE HAVING VARYING HORIZONTAL W...

EXTENDED-DRAIN METAL-OXIDE-SEMICONDUCTOR DEVICES WITH A SILICON-GER...

INTEGRATED CIRCUIT STRUCTURE WITH METAL GATE AND METAL FIELD PLATE...

STRUCTURE AND METHOD TO PROVIDE CONDUCTIVE FIELD PLATE OVER GATE ST...

HIGH VOLTAGE EXTENDED DRAIN MOSFET (EDMOS) DEVICES IN A HIGH-K META...

CO-INTEGRATED HIGH VOLTAGE (HV) AND MEDIUM VOLTAGE (MV) FIELD EFFEC...

SEMICONDUCTOR DEVICE WITH INTERCONNECT TO SOURCE/DRAIN

CIRCUITS CONSTRUCTED FROM STACKED FIELD-EFFECT TRANSISTORS

DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPA...

SEMICONDUCTOR DEVICE WITH NOVEL SPACER STRUCTURES HAVING NOVEL CONF...

CAP REMOVAL FOR GATE ELECTRODE STRUCTURES WITH REDUCED COMPLEXITY

SEMICONDUCTOR DEVICE WITH INTERCONNECT TO SOURCE/DRAIN

FDSOI SEMICONDUCTOR DEVICE WITH CONTACT ENHANCEMENT LAYER AND METHO...

CMOS DEVICES AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES AND MANUFACTURING TECHNIQUES FOR REDUCED ASPE...

TRANSISTOR ELEMENT WITH GATE ELECTRODE OF REDUCED HEIGHT AND RAISED...

SEMICONDUCTOR DEVICE INCLUDING BURIED CAPACITIVE STRUCTURES AND A M...

SEMICONDUCTOR DEVICE STRUCTURE WITH SELF-ALIGNED CAPACITOR DEVICE

AIR GAP SPACER IMPLANT FOR NZG RELIABILITY FIX

DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPA...

DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPA...

FDSOI - CAPACITOR

FINFET BASED FLASH MEMORY CELL

TRENCH BASED CHARGE PUMP DEVICE

SEMICONDUCTOR CIRCUIT ELEMENT

ELECTRICAL GATE-TO-SOURCE/DRAIN CONNECTION

E-FUSE IN SOI CONFIGURATION

METHOD OF MANUFACTURING P-CHANNEL FET DEVICE WITH SIGE CHANNEL

INTEGRATED CIRCUIT PRODUCT WITH BULK AND SOI SEMICONDUCTOR DEVICES