Peter Frijlink

Person

Crosne, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Method for epitaxial growth from the vapor phase of semiconductor m...
- Patent number 5,108,540
- Issue date Apr 28, 1992
- U.S. Philips Corporation
- Peter M. Frijlink
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for protection against an excess pressure
- Patent number 5,056,555
- Issue date Oct 15, 1991
- U.S. Philips Corporation
- Peter Frijlink
- F16 - ENGINEERING ELEMENTS AND UNITS GENERAL MEASURES FOR PRODUCING AND MAINT...
Information Patent Grant
Epitaxial reactor having a wall which is protected from deposits
- Patent number 5,027,746
- Issue date Jul 2, 1991
- U.S. Philips Corporation
- Peter Frijlink
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxy reactor having an improved gas collector
- Patent number 4,976,217
- Issue date Dec 11, 1990
- U.S. Philips Corporation
- Peter Frijlink
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial growth reactor provided with a planetary support
- Patent number 4,961,399
- Issue date Oct 9, 1990
- U.S. Philips Corporation
- Peter M. Frijlink
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device comprising a flat susceptor rotating parallel to a reference...
- Patent number 4,860,687
- Issue date Aug 29, 1989
- U.S. Philips Corporation
- Peter M. Frijlink
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a semiconductor device by vapor phase depos...
- Patent number 4,748,135
- Issue date May 31, 1988
- U.S. Philips Corp.
- Peter M. Frijlink
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapor phase epitaxy using complex premixing system
- Patent number 4,722,911
- Issue date Feb 2, 1988
- U.S. Philips Corporation
- Peter M. Frijlink
- C30 - CRYSTAL GROWTH

Peter Frijlink

Person

Patents Grantslast 30 patents

Method for epitaxial growth from the vapor phase of semiconductor m...

Device for protection against an excess pressure

Epitaxial reactor having a wall which is protected from deposits

Epitaxy reactor having an improved gas collector

Epitaxial growth reactor provided with a planetary support

Device comprising a flat susceptor rotating parallel to a reference...

Method of manufacturing a semiconductor device by vapor phase depos...

Vapor phase epitaxy using complex premixing system