Peter H. Mitchell

Person

Jericho, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Thin single-crystal silicon solar cells mounted to a structural sup...
- Patent number 11,978,820
- Issue date May 7, 2024
- Semivation, LLC
- David Vaclav Horak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of cleaving a single crystal substrate parallel to its activ...
- Patent number 10,589,445
- Issue date Mar 17, 2020
- Semivation, LLC
- Toshiharu Furukawa
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method of making integrated circuit chip utilizing oriented carbon...
- Patent number 7,989,222
- Issue date Aug 2, 2011
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Immersion lithography with equalized pressure on at least projectio...
- Patent number 7,889,317
- Issue date Feb 15, 2011
- International Business Machines Corporation
- Toshiharu Furukawa
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Methods and structures for promoting stable synthesis of carbon nan...
- Patent number 7,851,064
- Issue date Dec 14, 2010
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical carbon nanotube field effect transistors and arrays
- Patent number 7,829,883
- Issue date Nov 9, 2010
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods of fabricating vertical carbon nanotube field effect transi...
- Patent number 7,820,502
- Issue date Oct 26, 2010
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Integrated circuit chip utilizing oriented carbon nanotube conducti...
- Patent number 7,786,583
- Issue date Aug 31, 2010
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical nanotube semiconductor device structures and methods of fo...
- Patent number 7,691,720
- Issue date Apr 6, 2010
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a dual gated FinFET gain cell
- Patent number 7,674,674
- Issue date Mar 9, 2010
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-lithographic imaging techniques and processes
- Patent number 7,585,614
- Issue date Sep 8, 2009
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a dual gated FinFET gain cell
- Patent number 7,566,613
- Issue date Jul 28, 2009
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a wrap-around gate field effect transistor
- Patent number 7,560,347
- Issue date Jul 14, 2009
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical carbon nanotube transistor integration
- Patent number 7,535,016
- Issue date May 19, 2009
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation fill by liquid phase deposition of SiO2
- Patent number 7,525,156
- Issue date Apr 28, 2009
- International Business Machines Corporation
- Mark Charles Hakey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making integrated circuit chip having carbon nanotube co...
- Patent number 7,473,633
- Issue date Jan 6, 2009
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making integrated circuit chip utilizing oriented carbon...
- Patent number 7,439,081
- Issue date Oct 21, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a wrap-around gate field effect transistor
- Patent number 7,435,653
- Issue date Oct 14, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Immersion lithography with equalized pressure on at least projectio...
- Patent number 7,385,673
- Issue date Jun 10, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Methods and structures for promoting stable synthesis of carbon nan...
- Patent number 7,374,793
- Issue date May 20, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistors incorporating semiconducting nano...
- Patent number 7,329,567
- Issue date Feb 12, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation fill by liquid phase deposition of SiO2
- Patent number 7,273,794
- Issue date Sep 25, 2007
- International Business Machines Corporation
- Mark Charles Hakey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer cell for immersion lithography
- Patent number 7,271,878
- Issue date Sep 18, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Wrap-around gate field effect transistor
- Patent number 7,271,444
- Issue date Sep 18, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming alternating phase shift masks having improved ph...
- Patent number 7,264,415
- Issue date Sep 4, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Double-gate FETs (Field Effect Transistors)
- Patent number 7,250,347
- Issue date Jul 31, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit chip utilizing dielectric layer having oriented...
- Patent number 7,229,909
- Issue date Jun 12, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistors incorporating semiconducting nano...
- Patent number 7,211,844
- Issue date May 1, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit chip utilizing carbon nanotube composite interco...
- Patent number 7,135,773
- Issue date Nov 14, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit chip utilizing oriented carbon nanotube conducti...
- Patent number 7,129,097
- Issue date Oct 31, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Thin Single-Crystal Silicon Solar Cells Mounted to a Structural Sup...
- Publication number 20240097065
- Publication date Mar 21, 2024
- Semivation, LLC
- David Vaclav Horak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Making Integrated Circuit Chip Utilizing Oriented Carbon...
- Publication number 20100273298
- Publication date Oct 28, 2010
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
DUAL GATED FINFET GAIN CELL
- Publication number 20080261363
- Publication date Oct 23, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL NANOTUBE SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF FO...
- Publication number 20080227264
- Publication date Sep 18, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
WRAP-AROUND GATE FIELD EFFECT TRANSISTOR
- Publication number 20080206937
- Publication date Aug 28, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION FILL BY LIQUID PHASE DEPOSITION OF SiO2
- Publication number 20080197448
- Publication date Aug 21, 2008
- International Business Machines Corporation
- Mark Charles Hakey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMMERSION LITHOGRAPHY WITH EQUALIZED PRESSURE ON AT LEAST PROJECTIO...
- Publication number 20080165335
- Publication date Jul 10, 2008
- Toshiharu Furukawa
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
METHODS AND STRUCTURES FOR PROMOTING STABLE SYNTHESIS OF CARBON NAN...
- Publication number 20080160312
- Publication date Jul 3, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHODS OF FABRICATING VERTICAL CARBON NANOTUBE FIELD EFFECT TRANSI...
- Publication number 20080044954
- Publication date Feb 21, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Circuit Chip Utilizing Oriented Carbon Nanotube Conducti...
- Publication number 20080042287
- Publication date Feb 21, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
Design Structures Incorporating Shallow Trench Isolation Filled by...
- Publication number 20080040696
- Publication date Feb 14, 2008
- International Business Machines Corporation
- Mark Charles Hakey
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ILLUMINATION LIGHT IN IMMERSION LITHOGRAPHY STEPPER FOR PARTICLE OR...
- Publication number 20070296937
- Publication date Dec 27, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
SHALLOW TRENCH ISOLATION FILL BY LIQUID PHASE DEPOSITION OF SiO2
- Publication number 20070228510
- Publication date Oct 4, 2007
- International Business Machines Corporation
- Mark Charles Hakey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Chip Utilizing Dielectric Layer Having Oriented...
- Publication number 20070184647
- Publication date Aug 9, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
WRAP-AROUND GATE FIELD EFFECT TRANSISTOR
- Publication number 20070184588
- Publication date Aug 9, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Chip Utilizing Oriented Carbon Nanotube Conducti...
- Publication number 20070048879
- Publication date Mar 1, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR MAKING INTEGRATED CIRCUIT CHIP HAVING CARBON NANOTUBE CO...
- Publication number 20060292861
- Publication date Dec 28, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
IMMERSION LITHOGRAPHY WITH EQUALIZED PRESSURE ON AT LEAST PROJECTIO...
- Publication number 20060289794
- Publication date Dec 28, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
DOUBLE-GATE FETs (FIELD EFFECT TRANSISTORS)
- Publication number 20060172496
- Publication date Aug 3, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL CARBON NANOTUBE TRANSISTOR INTEGRATION
- Publication number 20060169972
- Publication date Aug 3, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
Integrated circuit chip utilizing dielectric layer having oriented...
- Publication number 20060128137
- Publication date Jun 15, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
SUB-LITHOGRAPHIC IMAGING TECHNIQUES AND PROCESSES
- Publication number 20060060562
- Publication date Mar 23, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit chip utilizing oriented carbon nanotube conducti...
- Publication number 20060022221
- Publication date Feb 2, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
Dual gated finfet gain cell
- Publication number 20060008927
- Publication date Jan 12, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Horizontal memory gain cells
- Publication number 20050286293
- Publication date Dec 29, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- G11 - INFORMATION STORAGE
Information Patent Application
Vertical field effect transistors incorporating semiconducting nano...
- Publication number 20050266627
- Publication date Dec 1, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
Wafer cell for immersion lithography
- Publication number 20050237501
- Publication date Oct 27, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
System and apparatus for photolithography
- Publication number 20050213061
- Publication date Sep 29, 2005
- International Business Machines Corporation
- Mark Charles Hakey
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Methods of forming alternating phase shift masks having improved ph...
- Publication number 20050202322
- Publication date Sep 15, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Method of forming FinFET gates without long etches
- Publication number 20050202607
- Publication date Sep 15, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS

Peter H. Mitchell

Person

Patents Grantslast 30 patents

Thin single-crystal silicon solar cells mounted to a structural sup...

Method of cleaving a single crystal substrate parallel to its activ...

Method of making integrated circuit chip utilizing oriented carbon...

Immersion lithography with equalized pressure on at least projectio...

Methods and structures for promoting stable synthesis of carbon nan...

Vertical carbon nanotube field effect transistors and arrays

Methods of fabricating vertical carbon nanotube field effect transi...

Integrated circuit chip utilizing oriented carbon nanotube conducti...

Vertical nanotube semiconductor device structures and methods of fo...

Method of forming a dual gated FinFET gain cell

Sub-lithographic imaging techniques and processes

Method of forming a dual gated FinFET gain cell

Methods for forming a wrap-around gate field effect transistor

Vertical carbon nanotube transistor integration

Shallow trench isolation fill by liquid phase deposition of SiO2

Method for making integrated circuit chip having carbon nanotube co...

Method for making integrated circuit chip utilizing oriented carbon...

Methods for forming a wrap-around gate field effect transistor

Immersion lithography with equalized pressure on at least projectio...

Methods and structures for promoting stable synthesis of carbon nan...

Vertical field effect transistors incorporating semiconducting nano...

Shallow trench isolation fill by liquid phase deposition of SiO2

Wafer cell for immersion lithography

Wrap-around gate field effect transistor

Methods of forming alternating phase shift masks having improved ph...

Double-gate FETs (Field Effect Transistors)

Integrated circuit chip utilizing dielectric layer having oriented...

Vertical field effect transistors incorporating semiconducting nano...

Integrated circuit chip utilizing carbon nanotube composite interco...

Integrated circuit chip utilizing oriented carbon nanotube conducti...

Patents Applicationslast 30 patents

Thin Single-Crystal Silicon Solar Cells Mounted to a Structural Sup...

Method of Making Integrated Circuit Chip Utilizing Oriented Carbon...

DUAL GATED FINFET GAIN CELL

VERTICAL NANOTUBE SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF FO...

WRAP-AROUND GATE FIELD EFFECT TRANSISTOR

SHALLOW TRENCH ISOLATION FILL BY LIQUID PHASE DEPOSITION OF SiO2

IMMERSION LITHOGRAPHY WITH EQUALIZED PRESSURE ON AT LEAST PROJECTIO...

METHODS AND STRUCTURES FOR PROMOTING STABLE SYNTHESIS OF CARBON NAN...

METHODS OF FABRICATING VERTICAL CARBON NANOTUBE FIELD EFFECT TRANSI...

Integrated Circuit Chip Utilizing Oriented Carbon Nanotube Conducti...

Design Structures Incorporating Shallow Trench Isolation Filled by...

ILLUMINATION LIGHT IN IMMERSION LITHOGRAPHY STEPPER FOR PARTICLE OR...

SHALLOW TRENCH ISOLATION FILL BY LIQUID PHASE DEPOSITION OF SiO2

Integrated Circuit Chip Utilizing Dielectric Layer Having Oriented...

WRAP-AROUND GATE FIELD EFFECT TRANSISTOR

Integrated Circuit Chip Utilizing Oriented Carbon Nanotube Conducti...

METHOD FOR MAKING INTEGRATED CIRCUIT CHIP HAVING CARBON NANOTUBE CO...

IMMERSION LITHOGRAPHY WITH EQUALIZED PRESSURE ON AT LEAST PROJECTIO...

DOUBLE-GATE FETs (FIELD EFFECT TRANSISTORS)

VERTICAL CARBON NANOTUBE TRANSISTOR INTEGRATION

Integrated circuit chip utilizing dielectric layer having oriented...

SUB-LITHOGRAPHIC IMAGING TECHNIQUES AND PROCESSES

Integrated circuit chip utilizing oriented carbon nanotube conducti...

Dual gated finfet gain cell

Horizontal memory gain cells

Vertical field effect transistors incorporating semiconducting nano...

Wafer cell for immersion lithography

System and apparatus for photolithography

Methods of forming alternating phase shift masks having improved ph...

Method of forming FinFET gates without long etches