Peter J. Geiss

Person

Underhill, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of controlling grain size in a polysilicon layer and in semi...
- Patent number 7,777,302
- Issue date Aug 17, 2010
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of base formation in a BiCOMS process
- Patent number 7,696,034
- Issue date Apr 13, 2010
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of base formation in a BiCMOS process
- Patent number 7,625,792
- Issue date Dec 1, 2009
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication for SiGe heterojunction bipolar transistor (HBT)
- Patent number 7,538,004
- Issue date May 26, 2009
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of collector formation in BiCMOS technology
- Patent number 7,491,985
- Issue date Feb 17, 2009
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of base formation in a BiCMOS process
- Patent number 7,390,721
- Issue date Jun 24, 2008
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiGe heterojunction bipolar transistor (HBT)
- Patent number 7,317,215
- Issue date Jan 8, 2008
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling grain size in a polysilicon layer and in semi...
- Patent number 7,247,924
- Issue date Jul 24, 2007
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of collector formation in BiCMOS technology
- Patent number 7,002,190
- Issue date Feb 21, 2006
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon dioxide removing method
- Patent number 6,967,167
- Issue date Nov 22, 2005
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of base formation in a BiCMOS process
- Patent number 6,965,133
- Issue date Nov 15, 2005
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI pull-down to control SiGe facet growth
- Patent number 6,936,509
- Issue date Aug 30, 2005
- International Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of base formation in a BiCMOS process
- Patent number 6,911,681
- Issue date Jun 28, 2005
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling grain size in a polysilicon layer and in semi...
- Patent number 6,682,992
- Issue date Jan 27, 2004
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sti pull-down to control SiGe facet growth
- Patent number 6,674,102
- Issue date Jan 6, 2004
- International Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for formation of a blocked silicide resistor
- Patent number 6,660,664
- Issue date Dec 9, 2003
- International Business Machines Corp.
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a bipolar transistor having a realigned emitter
- Patent number 6,541,336
- Issue date Apr 1, 2003
- International Business Machines Corporation
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for epitaxial bipolar BiCMOS
- Patent number 6,448,124
- Issue date Sep 10, 2002
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSCAP design for improved reliability
- Patent number 6,420,747
- Issue date Jul 16, 2002
- International Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shrink-wrap collar for DRAM deep trenches
- Patent number 6,399,976
- Issue date Jun 4, 2002
- International Business Machines Corporation
- Peter John Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dislocation suppression by carbon incorporation
- Patent number 6,258,695
- Issue date Jul 10, 2001
- International Business Machines Corporation
- James Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shrink-wrap collar from DRAM deep trenches
- Patent number 6,069,049
- Issue date May 30, 2000
- International Business Machines Corporation
- Peter John Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porous silicon trench and capacitor structures
- Patent number 5,635,419
- Issue date Jun 3, 1997
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porous silicon trench and capacitor structures
- Patent number 5,508,542
- Issue date Apr 16, 1996
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making epitaxial cobalt silicide using a thin metal under...
- Patent number 5,356,837
- Issue date Oct 18, 1994
- International Business Machines Corporation
- Peter J. Geiss
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHODS OF BASE FORMATION IN A BiCMOS PROCESS
- Publication number 20080268604
- Publication date Oct 30, 2008
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIGE HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) AND METHOD OF FABRICATION
- Publication number 20080124882
- Publication date May 29, 2008
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CONTROLLING GRAIN SIZE IN A POLYSILICON LAYER AND IN SEMI...
- Publication number 20070284694
- Publication date Dec 13, 2007
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Base Formation in a Bicmos Process
- Publication number 20070207567
- Publication date Sep 6, 2007
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of collector formation in BiCMOS technology
- Publication number 20060124964
- Publication date Jun 15, 2006
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiGe HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) AND METHOD OF FABRICATION
- Publication number 20060060887
- Publication date Mar 23, 2006
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of base formation in a BiCMOS process
- Publication number 20060017066
- Publication date Jan 26, 2006
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF BASE FORMATION IN A BICMOS PROCESS
- Publication number 20050199908
- Publication date Sep 15, 2005
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for formation of a bipolar resistor
- Publication number 20050095787
- Publication date May 5, 2005
- International Business Machines Corporation
- Arne W. Ballantine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON DIOXIDE REMOVING METHOD
- Publication number 20050070101
- Publication date Mar 31, 2005
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of controlling grain size in a polysilicon layer and in semi...
- Publication number 20040084754
- Publication date May 6, 2004
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sti pull-down to control SiGe facet growth
- Publication number 20040063273
- Publication date Apr 1, 2004
- International Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of controlling grain size in a polysilicon layer and in semi...
- Publication number 20030216013
- Publication date Nov 20, 2003
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sti pull-down to control SiGe facet growth
- Publication number 20020096693
- Publication date Jul 25, 2002
- International Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR EPITAXIAL BIPOLAR BICMOS
- Publication number 20020076874
- Publication date Jun 20, 2002
- DOUGLAS D. COOLBAUGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSCAP DESIGN FOR IMPROVED RELIABILITY
- Publication number 20020017693
- Publication date Feb 14, 2002
- DOUGLAS DUANE COOLBAUGH
- H01 - BASIC ELECTRIC ELEMENTS

Peter J. Geiss

Person

Patents Grantslast 30 patents

Method of controlling grain size in a polysilicon layer and in semi...

Methods of base formation in a BiCOMS process

Method of base formation in a BiCMOS process

Method of fabrication for SiGe heterojunction bipolar transistor (HBT)

Method of collector formation in BiCMOS technology

Methods of base formation in a BiCMOS process

SiGe heterojunction bipolar transistor (HBT)

Method of controlling grain size in a polysilicon layer and in semi...

Method of collector formation in BiCMOS technology

Silicon dioxide removing method

Method of base formation in a BiCMOS process

STI pull-down to control SiGe facet growth

Method of base formation in a BiCMOS process

Method of controlling grain size in a polysilicon layer and in semi...

Sti pull-down to control SiGe facet growth

Structure and method for formation of a blocked silicide resistor

Method of fabricating a bipolar transistor having a realigned emitter

Method for epitaxial bipolar BiCMOS

MOSCAP design for improved reliability

Shrink-wrap collar for DRAM deep trenches

Dislocation suppression by carbon incorporation

Shrink-wrap collar from DRAM deep trenches

Porous silicon trench and capacitor structures

Porous silicon trench and capacitor structures

Method of making epitaxial cobalt silicide using a thin metal under...

Patents Applicationslast 30 patents

METHODS OF BASE FORMATION IN A BiCMOS PROCESS

SIGE HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) AND METHOD OF FABRICATION

METHOD OF CONTROLLING GRAIN SIZE IN A POLYSILICON LAYER AND IN SEMI...

Method of Base Formation in a Bicmos Process

Method of collector formation in BiCMOS technology

SiGe HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) AND METHOD OF FABRICATION

Methods of base formation in a BiCMOS process

METHOD OF BASE FORMATION IN A BICMOS PROCESS

Structure and method for formation of a bipolar resistor

SILICON DIOXIDE REMOVING METHOD

Method of controlling grain size in a polysilicon layer and in semi...

Sti pull-down to control SiGe facet growth

Method of controlling grain size in a polysilicon layer and in semi...

Sti pull-down to control SiGe facet growth

METHOD FOR EPITAXIAL BIPOLAR BICMOS

MOSCAP DESIGN FOR IMPROVED RELIABILITY