Peter Kim

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Stillwater, MN, US

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor component with protrusion propagation body and corres...
- Patent number 10,411,124
- Issue date Sep 10, 2019
- Infineon Technologies Americas Corp.
- Chan Kyung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low dislocation density III-nitride semiconductor component
- Patent number 9,954,089
- Issue date Apr 24, 2018
- Infineon Technologies Americas Corp.
- Chan Kyung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with a multi-layered nucleation body
- Patent number 9,728,610
- Issue date Aug 8, 2017
- Infineon Technologies Americas Corp.
- Jianwei Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride semiconductor device with doped epi structures
- Patent number 9,608,075
- Issue date Mar 28, 2017
- Infineon Technologies Americas Corp.
- Jianwei Wan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Component with Protrusion Propagation Body and Corres...
- Publication number 20180175183
- Publication date Jun 21, 2018
- Infineon Technologies Americas Corp.
- Chan Kyung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Dislocation Density III-Nitride Semiconductor Component
- Publication number 20170365699
- Publication date Dec 21, 2017
- Infineon Technologies Americas Corp.
- Chan Kyung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component with a Multi-Layered Nucleation Body
- Publication number 20170229548
- Publication date Aug 10, 2017
- Infineon Technologies Americas Corp.
- Jianwei Wan
- H01 - BASIC ELECTRIC ELEMENTS