Peter Lechner

Person

Holzkirchen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
DEPFET transistor and method of manufacturing a DEPFET transistor
- Patent number 12,046,674
- Issue date Jul 23, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DEPFET transistor and method of manufacturing a DEPFET transistor
- Patent number 12,015,082
- Issue date Jun 18, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with separation regions
- Patent number 10,903,344
- Issue date Jan 26, 2021
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with separation regions
- Patent number 10,381,467
- Issue date Aug 13, 2019
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having electrode tre...
- Patent number 10,217,837
- Issue date Feb 26, 2019
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with control structure including buried portio...
- Patent number 9,917,186
- Issue date Mar 13, 2018
- Infineon Technologies AG
- Johannes Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and reverse conducting insulated gate bipolar...
- Patent number 9,876,100
- Issue date Jan 23, 2018
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having electrode tre...
- Patent number 9,837,506
- Issue date Dec 5, 2017
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with semiconductor mesa including a constriction
- Patent number 9,666,665
- Issue date May 30, 2017
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and insulated gate bipolar transistor with sou...
- Patent number 9,570,577
- Issue date Feb 14, 2017
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with control structure including buried portio...
- Patent number 9,536,999
- Issue date Jan 3, 2017
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and reverse conducting insulated gate bipolar...
- Patent number 9,231,091
- Issue date Jan 5, 2016
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 7,586,136
- Issue date Sep 8, 2009
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
- Peter Lechner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor detector with optimised radiation entry window
- Patent number 7,105,827
- Issue date Sep 12, 2006
- Max-Planck Gesellschaft zur Foerderung der Wissenschaften e.V.
- Peter Lechner
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEPFET TRANSISTOR
- Publication number 20240322038
- Publication date Sep 26, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPFET TRANSISTOR AND METHOD OF MANUFACTURING A DEPFET TRANSISTOR
- Publication number 20220278233
- Publication date Sep 1, 2022
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Separation Regions
- Publication number 20190288094
- Publication date Sep 19, 2019
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Separation Regions
- Publication number 20180145161
- Publication date May 24, 2018
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Having Electrode Tre...
- Publication number 20180090594
- Publication date Mar 29, 2018
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Having Electrode Tre...
- Publication number 20170148893
- Publication date May 25, 2017
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Control Structure Including Buried Portio...
- Publication number 20170110574
- Publication date Apr 20, 2017
- lnfineon Technologies AG
- Johannes Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Reverse Conducting Insulated Gate Bipolar...
- Publication number 20160093724
- Publication date Mar 31, 2016
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CONTROL STRUCTURE INCLUDING BURIED PORTIO...
- Publication number 20160071974
- Publication date Mar 10, 2016
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND REVERSE CONDUCTING INSULATED GATE BIPOLAR...
- Publication number 20150325688
- Publication date Nov 12, 2015
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND INSULATED GATE BIPOLAR TRANSISTOR WITH SOU...
- Publication number 20150325687
- Publication date Nov 12, 2015
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR MESA INCLUDING A CONSTRICTION
- Publication number 20150295034
- Publication date Oct 15, 2015
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure
- Publication number 20080230811
- Publication date Sep 25, 2008
- MAX-PLANCK-GESELLSCHAFT ZUR FORDERUNG DER WISSENSC HAFTEN e.V.
- Peter Lechner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor detector with optimised radiation entry window
- Publication number 20040149919
- Publication date Aug 5, 2004
- Peter Lechner
- H01 - BASIC ELECTRIC ELEMENTS

Peter Lechner

Person

Patents Grantslast 30 patents

DEPFET transistor and method of manufacturing a DEPFET transistor

DEPFET transistor and method of manufacturing a DEPFET transistor

Semiconductor device with separation regions

Semiconductor device with separation regions

Method of manufacturing a semiconductor device having electrode tre...

Semiconductor device with control structure including buried portio...

Semiconductor device and reverse conducting insulated gate bipolar...

Method of manufacturing a semiconductor device having electrode tre...

Semiconductor device with semiconductor mesa including a constriction

Semiconductor device and insulated gate bipolar transistor with sou...

Semiconductor device with control structure including buried portio...

Semiconductor device and reverse conducting insulated gate bipolar...

Semiconductor structure

Semiconductor detector with optimised radiation entry window

Patents Applicationslast 30 patents

DEPFET TRANSISTOR

DEPFET TRANSISTOR AND METHOD OF MANUFACTURING A DEPFET TRANSISTOR

Semiconductor Device with Separation Regions

Semiconductor Device with Separation Regions

Method of Manufacturing a Semiconductor Device Having Electrode Tre...

Method of Manufacturing a Semiconductor Device Having Electrode Tre...

Semiconductor Device with Control Structure Including Buried Portio...

Semiconductor Device and Reverse Conducting Insulated Gate Bipolar...

SEMICONDUCTOR DEVICE WITH CONTROL STRUCTURE INCLUDING BURIED PORTIO...

SEMICONDUCTOR DEVICE AND REVERSE CONDUCTING INSULATED GATE BIPOLAR...

SEMICONDUCTOR DEVICE AND INSULATED GATE BIPOLAR TRANSISTOR WITH SOU...

SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR MESA INCLUDING A CONSTRICTION

Semiconductor Structure

Semiconductor detector with optimised radiation entry window