Philip Leland HOWER

Person

Concord, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Lateral MOSFET with buried drain extension layer
- Patent number 11,152,459
- Issue date Oct 19, 2021
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having double isolation with one floating isolation
- Patent number 10,937,905
- Issue date Mar 2, 2021
- Texas Instruments Incorporated
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated high-side driver for P-N bimodal power device
- Patent number 10,601,422
- Issue date Mar 24, 2020
- Texas Instruments Incorporated
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral MOSFET with buried drain extension layer
- Patent number 10,535,731
- Issue date Jan 14, 2020
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical thermoelectric structures
- Patent number 10,446,734
- Issue date Oct 15, 2019
- Texas Instruments Incorporated
- Barry Jon Male
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures to avoid floating resurf layer in high voltage lateral d...
- Patent number 10,319,809
- Issue date Jun 11, 2019
- Texas Instruments Incorporated
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral MOSFET with buried drain extension layer
- Patent number 9,985,095
- Issue date May 29, 2018
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage lateral extended drain MOS transistor with improved dr...
- Patent number 9,947,784
- Issue date Apr 17, 2018
- Texas Instruments Incorporated
- Philip Leland Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures to avoid floating RESURF layer in high voltage lateral d...
- Patent number 9,876,071
- Issue date Jan 23, 2018
- Texas Instruments Incorporated
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated high-side driver for P-N bimodal power device
- Patent number 9,843,322
- Issue date Dec 12, 2017
- Texas Instruments Incorporated
- Yongxi Zhang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High voltage lateral DMOS transistor with optimized source-side blo...
- Patent number 9,831,320
- Issue date Nov 28, 2017
- Texas Instruments Incorporated
- Philip Leland Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage drain extension on thin buried oxide SOI
- Patent number 9,806,190
- Issue date Oct 31, 2017
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage lateral DMOS transistor with optimized source-side blo...
- Patent number 9,793,375
- Issue date Oct 17, 2017
- Texas Instruments Incorporated
- Philip Leland Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage lateral extended drain MOS transistor with improved dr...
- Patent number 9,543,149
- Issue date Jan 10, 2017
- Texas Instruments Incorporated
- Philip Leland Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage depletion mode N-channel JFET
- Patent number 9,508,869
- Issue date Nov 29, 2016
- Texas Instruments Incorporated
- Philip Leland Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral MOSFET with buried drain extension layer
- Patent number 9,397,211
- Issue date Jul 19, 2016
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical thermoelectric structures
- Patent number 9,349,933
- Issue date May 24, 2016
- Texas Instruments Incorporated
- Barry Jon Male
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage lateral DMOS transistor with optimized source-side blo...
- Patent number 9,299,832
- Issue date Mar 29, 2016
- Texas Instruments Incorporated
- Philip Leland Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage depletion mode N-channel JFET
- Patent number 9,202,692
- Issue date Dec 1, 2015
- Texas Instruments Incorporated
- Philip Leland Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC with floating buried layer ring for isolation of embedded islands
- Patent number 9,087,708
- Issue date Jul 21, 2015
- Texas Instruments Incorporated
- John Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS transistor having an increased breakdown voltage and method fo...
- Patent number 9,070,768
- Issue date Jun 30, 2015
- X-Fab Semiconductor Foundries AG
- Ralf Lerner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated high voltage divider
- Patent number 8,878,330
- Issue date Nov 4, 2014
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated gate controlled high voltage divider
- Patent number 8,872,273
- Issue date Oct 28, 2014
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making vertical transistor with graded field plate dielec...
- Patent number 8,853,029
- Issue date Oct 7, 2014
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical thermoelectric structures
- Patent number 8,728,846
- Issue date May 20, 2014
- Texas Instruments Incorporated
- Barry Jon Male
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated lateral high voltage MOSFET
- Patent number 8,643,099
- Issue date Feb 4, 2014
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated lateral high voltage MOSFET
- Patent number 8,476,127
- Issue date Jul 2, 2013
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit having integrated heating structure for parametric trimming
- Patent number 8,461,589
- Issue date Jun 11, 2013
- Texas Instruments Incorporated
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral insulated gate bipolar transistor
- Patent number 8,278,683
- Issue date Oct 2, 2012
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation trench with rounded corners for BiCMOS process
- Patent number 8,274,131
- Issue date Sep 25, 2012
- Texas Instruments Incorporated
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LATERAL MOSFET WITH BURIED DRAIN EXTENSION LAYER
- Publication number 20200146945
- Publication date May 14, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Marie DENISON
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
LATERAL MOSFET WITH BURIED DRAIN EXTENSION LAYER
- Publication number 20180240870
- Publication date Aug 23, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Marie DENISON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES TO AVOID FLOATING RESURF LAYER IN HIGH VOLTAGE LATERAL D...
- Publication number 20180108729
- Publication date Apr 19, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED HIGH-SIDE DRIVER FOR P-N BIMODAL POWER DEVICE
- Publication number 20180097517
- Publication date Apr 5, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated High-Side Driver For P-N Bimodal Power Device
- Publication number 20170264289
- Publication date Sep 14, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE LATERAL EXTENDED DRAIN MOS TRANSISTOR WITH IMPROVED DR...
- Publication number 20170084737
- Publication date Mar 23, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Philip Leland HOWER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL THERMOELECTRIC STRUCTURES
- Publication number 20160351772
- Publication date Dec 1, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Barry Jon Male
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL MOSFET WITH BURIED DRAIN EXTENSION LAYER
- Publication number 20160300946
- Publication date Oct 13, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Marie DENISON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES TO AVOID FLOATING RESURF LAYER IN HIGH VOLTAGE LATERAL D...
- Publication number 20160254346
- Publication date Sep 1, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Lateral DMOS Transistor with Optimized Source-Side Blo...
- Publication number 20160163828
- Publication date Jun 9, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Philip Leland HOWER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Lateral DMOS Transistor with Optimized Source-Side Blo...
- Publication number 20160163855
- Publication date Jun 9, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Philip Leland HOWER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEPLETION MODE N-CHANNEL JFET
- Publication number 20160043236
- Publication date Feb 11, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Philip Leland HOWER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING DOUBLE ISOLATION WITH ONE FLOATING ISOLATION
- Publication number 20150340496
- Publication date Nov 26, 2015
- TEXAS INSTRUMENTS INCORPORATED
- YONGXI ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL MOSFET WITH BURIED DRAIN EXTENSION LAYER
- Publication number 20150179793
- Publication date Jun 25, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Marie DENISON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEPLETION MODE N-CHANNEL JFET
- Publication number 20150179452
- Publication date Jun 25, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Philip Leland HOWER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE LATERAL DMOS TRANSISTOR WITH OPTIMIZED SOURCE-SIDE BLO...
- Publication number 20150171212
- Publication date Jun 18, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Philip Leland HOWER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE LATERAL EXTENDED DRAIN MOS TRANSISTOR WITH IMPROVED DR...
- Publication number 20150171213
- Publication date Jun 18, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Philip Leland HOWER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CZOCHRALSKI SUBSTRATES HAVING REDUCED OXYGEN DONORS
- Publication number 20150118861
- Publication date Apr 30, 2015
- TEXAS INSTRUMENTS INCORPORATED
- BRADLEY DAVID SUCHER
- C30 - CRYSTAL GROWTH
Information Patent Application
IC WITH FLOATING BURIED LAYER RING FOR ISOLATION OF EMBEDDED ISLANDS
- Publication number 20150041907
- Publication date Feb 12, 2015
- TEXAS INSTRUMENTS INCORPORATED
- JOHN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL THERMOELECTRIC STRUCTURES
- Publication number 20140216517
- Publication date Aug 7, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Barry Jon Male
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Lateral High Voltage Mosfet
- Publication number 20130277739
- Publication date Oct 24, 2013
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED HIGH VOLTAGE DIVIDER
- Publication number 20130032922
- Publication date Feb 7, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED GATE CONTROLLED HIGH VOLTAGE DIVIDER
- Publication number 20130032863
- Publication date Feb 7, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DMOS TRANSISTOR HAVING AN INCREASED BREAKDOWN VOLTAGE AND METHOD FO...
- Publication number 20120306010
- Publication date Dec 6, 2012
- Ralf Lerner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED LATERAL HIGH VOLTAGE MOSFET
- Publication number 20120112277
- Publication date May 10, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DRAIN EXTENSION ON THIN BURIED OXIDE SOI
- Publication number 20120104497
- Publication date May 3, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING VERTICAL TRANSISTOR WITH GRADED FIELD PLATE DIELEC...
- Publication number 20110275210
- Publication date Nov 10, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS
- Publication number 20110073955
- Publication date Mar 31, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD PLATE TRENCH MOSFET TRANSISTOR WITH GRADED DIELECTRIC LINER T...
- Publication number 20100264486
- Publication date Oct 21, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL THERMOELECTRIC STRUCTURES
- Publication number 20100044704
- Publication date Feb 25, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Barry John Male
- H01 - BASIC ELECTRIC ELEMENTS

Philip Leland HOWER

Person

Patents Grantslast 30 patents

Lateral MOSFET with buried drain extension layer

Transistor having double isolation with one floating isolation

Integrated high-side driver for P-N bimodal power device

Lateral MOSFET with buried drain extension layer

Vertical thermoelectric structures

Structures to avoid floating resurf layer in high voltage lateral d...

Lateral MOSFET with buried drain extension layer

High voltage lateral extended drain MOS transistor with improved dr...

Structures to avoid floating RESURF layer in high voltage lateral d...

Integrated high-side driver for P-N bimodal power device

High voltage lateral DMOS transistor with optimized source-side blo...

High voltage drain extension on thin buried oxide SOI

High voltage lateral DMOS transistor with optimized source-side blo...

High voltage lateral extended drain MOS transistor with improved dr...

High voltage depletion mode N-channel JFET

Lateral MOSFET with buried drain extension layer

Vertical thermoelectric structures

High voltage lateral DMOS transistor with optimized source-side blo...

High voltage depletion mode N-channel JFET

IC with floating buried layer ring for isolation of embedded islands

DMOS transistor having an increased breakdown voltage and method fo...

Integrated high voltage divider

Integrated gate controlled high voltage divider

Method of making vertical transistor with graded field plate dielec...

Vertical thermoelectric structures

Integrated lateral high voltage MOSFET

Integrated lateral high voltage MOSFET

Circuit having integrated heating structure for parametric trimming

Lateral insulated gate bipolar transistor

Isolation trench with rounded corners for BiCMOS process

Patents Applicationslast 30 patents

LATERAL MOSFET WITH BURIED DRAIN EXTENSION LAYER

LATERAL MOSFET WITH BURIED DRAIN EXTENSION LAYER

STRUCTURES TO AVOID FLOATING RESURF LAYER IN HIGH VOLTAGE LATERAL D...

INTEGRATED HIGH-SIDE DRIVER FOR P-N BIMODAL POWER DEVICE

Integrated High-Side Driver For P-N Bimodal Power Device

HIGH VOLTAGE LATERAL EXTENDED DRAIN MOS TRANSISTOR WITH IMPROVED DR...

VERTICAL THERMOELECTRIC STRUCTURES

LATERAL MOSFET WITH BURIED DRAIN EXTENSION LAYER

STRUCTURES TO AVOID FLOATING RESURF LAYER IN HIGH VOLTAGE LATERAL D...

High Voltage Lateral DMOS Transistor with Optimized Source-Side Blo...

High Voltage Lateral DMOS Transistor with Optimized Source-Side Blo...

HIGH VOLTAGE DEPLETION MODE N-CHANNEL JFET

TRANSISTOR HAVING DOUBLE ISOLATION WITH ONE FLOATING ISOLATION

LATERAL MOSFET WITH BURIED DRAIN EXTENSION LAYER

HIGH VOLTAGE DEPLETION MODE N-CHANNEL JFET

HIGH VOLTAGE LATERAL DMOS TRANSISTOR WITH OPTIMIZED SOURCE-SIDE BLO...

HIGH VOLTAGE LATERAL EXTENDED DRAIN MOS TRANSISTOR WITH IMPROVED DR...

CZOCHRALSKI SUBSTRATES HAVING REDUCED OXYGEN DONORS

IC WITH FLOATING BURIED LAYER RING FOR ISOLATION OF EMBEDDED ISLANDS

VERTICAL THERMOELECTRIC STRUCTURES

Integrated Lateral High Voltage Mosfet

INTEGRATED HIGH VOLTAGE DIVIDER

INTEGRATED GATE CONTROLLED HIGH VOLTAGE DIVIDER

DMOS TRANSISTOR HAVING AN INCREASED BREAKDOWN VOLTAGE AND METHOD FO...

INTEGRATED LATERAL HIGH VOLTAGE MOSFET

HIGH VOLTAGE DRAIN EXTENSION ON THIN BURIED OXIDE SOI

METHOD OF MAKING VERTICAL TRANSISTOR WITH GRADED FIELD PLATE DIELEC...

ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS

FIELD PLATE TRENCH MOSFET TRANSISTOR WITH GRADED DIELECTRIC LINER T...

VERTICAL THERMOELECTRIC STRUCTURES