Philipp Riess

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Resonant fin transistor (RFT)
- Patent number 11,201,151
- Issue date Dec 14, 2021
- Intel Corporation
- Richard Hudeczek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for forming semiconductor devices
- Patent number 11,024,712
- Issue date Jun 1, 2021
- Intel IP Corporation
- Vase Jovanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Detection of environmental conditions in a semiconductor chip
- Patent number 9,793,220
- Issue date Oct 17, 2017
- INTEL DEUTSCHLAND GMBH
- Hans-Joachim Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 9,385,105
- Issue date Jul 5, 2016
- INTEL DEUTSCHLAND GMBH
- Thorsten Meyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diodes having metal gate electrodes and methods of formati...
- Patent number 8,901,624
- Issue date Dec 2, 2014
- Infineon Technologies AG
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices formed with dual damascene process
- Patent number 8,860,225
- Issue date Oct 14, 2014
- Infineon Technologies AG
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic component and a system and method for producing an elect...
- Patent number 8,710,590
- Issue date Apr 29, 2014
- Infineon Technologies AG
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor having a plurality of parallel conductive members
- Patent number 8,569,820
- Issue date Oct 29, 2013
- Infineon Technologies AG
- Hans-Joachim Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor structure
- Patent number 8,536,677
- Issue date Sep 17, 2013
- Infineon Technologies AG
- Peter Baumgartner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diodes having metal gate electrodes and methods of formati...
- Patent number 8,518,811
- Issue date Aug 27, 2013
- Infineon Technologies AG
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor structure
- Patent number 8,508,019
- Issue date Aug 13, 2013
- Infineon Techn. AG
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced capacitance tolerance value
- Patent number 8,394,696
- Issue date Mar 12, 2013
- Infineon Technologies AG
- Peter Baumgartner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIM capacitors in semiconductor components
- Patent number 8,314,452
- Issue date Nov 20, 2012
- Infineon Technologies AG
- Philipp Riess
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Capacitor structure
- Patent number 8,242,579
- Issue date Aug 14, 2012
- Infineon Technologies AG
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacture thereof
- Patent number 8,138,539
- Issue date Mar 20, 2012
- Infineon Technologies AG
- Hans-Joachim Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIM capacitors in semiconductor components
- Patent number 8,101,495
- Issue date Jan 24, 2012
- Infineon Technologies AG
- Philipp Riess
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Dual damascene process
- Patent number 8,062,971
- Issue date Nov 22, 2011
- Infineon Technologies AG
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with capacitor arrangement electrically couple...
- Patent number 7,906,831
- Issue date Mar 15, 2011
- Infineon Technologies AG
- Peter Baumgartner
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Integrated capacitor structure
- Patent number 7,485,945
- Issue date Feb 3, 2009
- Infineon Technologies AG
- Peter Baumgartner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for determining an ESD/latch-up strength of an integrated ci...
- Patent number 6,930,501
- Issue date Aug 16, 2005
- Infineon Technologies AG
- Silke Bargstädt-Franke
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Routing and Passive Components in a Direct Bonding Layer
- Publication number 20250006630
- Publication date Jan 2, 2025
- Intel Corporation
- Carla Moran Guizan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Waveguides for Semiconductor Technology
- Publication number 20250006668
- Publication date Jan 2, 2025
- Intel Corporation
- Carla Moran Guizan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CAPACITOR
- Publication number 20240429269
- Publication date Dec 26, 2024
- Intel Corporation
- Peter BAUMGARTNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CAPACITOR
- Publication number 20240429155
- Publication date Dec 26, 2024
- Intel Corporation
- Mamatha YAKKEGONDI VIRUPAKSHAPPA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHODS AND APPARATUS FOR IMPLEMENTING CAPACITORS IN SEMICONDUCTOR...
- Publication number 20240387353
- Publication date Nov 21, 2024
- Intel Corporation
- Michael Langenbuch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESONANT FIN TRANSISTOR (RFT)
- Publication number 20210305245
- Publication date Sep 30, 2021
- Intel Corporation
- Richard HUDECZEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices and methods for forming semiconductor devices
- Publication number 20200006483
- Publication date Jan 2, 2020
- Intel IP Corporation
- Vase JOVANOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices Formed With Dual Damascene Process
- Publication number 20150084196
- Publication date Mar 26, 2015
- INFINEON TECHNOLOGIES AG
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20150028478
- Publication date Jan 29, 2015
- Thorsten Meyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky Diodes Having Metal Gate Electrodes and Methods of Formati...
- Publication number 20130307091
- Publication date Nov 21, 2013
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DETECTION OF ENVIRONMENTAL CONDITIONS IN A SEMICONDUCTOR CHIP
- Publication number 20130240884
- Publication date Sep 19, 2013
- Intel Mobile Communications GmbH
- Hans-Joachim Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitor Structure
- Publication number 20120267762
- Publication date Oct 25, 2012
- Philipp RIESS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky Diodes Having Metal Gate Electrodes And Methods of Formati...
- Publication number 20120256274
- Publication date Oct 11, 2012
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods of Manufacture Thereof
- Publication number 20120099243
- Publication date Apr 26, 2012
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIM Capacitors in Semiconductor Components
- Publication number 20120091560
- Publication date Apr 19, 2012
- Infineon Techonlogies AG
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices Formed With Dual Damascene Process
- Publication number 20120025382
- Publication date Feb 2, 2012
- INFINEON TECHNOLOGIES AG
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Reduced Capacitance Tolerance Value
- Publication number 20110086487
- Publication date Apr 14, 2011
- Peter Baumgartner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitor Structure
- Publication number 20100295154
- Publication date Nov 25, 2010
- Philipp RIESS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20100072572
- Publication date Mar 25, 2010
- Peter BAUMGARTNER
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Dual Damascene Process
- Publication number 20090239375
- Publication date Sep 24, 2009
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIM Capacitors in Semiconductor Components
- Publication number 20090230507
- Publication date Sep 17, 2009
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods of Manufacture Thereof
- Publication number 20090141424
- Publication date Jun 4, 2009
- Hans-Joachim Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Reduced Capacitance Tolerance Value
- Publication number 20090014832
- Publication date Jan 15, 2009
- Peter Baumgartner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitor Structure
- Publication number 20090009926
- Publication date Jan 8, 2009
- INFINEON TECHNOLOGIES AG
- Peter BAUMGARTNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CAPACITOR STRUCTURE
- Publication number 20070181924
- Publication date Aug 9, 2007
- Infineon Technologies AG
- Peter Baumgartner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic component and a system and method for producing an elect...
- Publication number 20070010077
- Publication date Jan 11, 2007
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor comprising fill areas in the source drain and/or drain r...
- Publication number 20050263817
- Publication date Dec 1, 2005
- Martin Wendel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for determining an ESD/latch-up strength of an integrated ci...
- Publication number 20050003564
- Publication date Jan 6, 2005
- Silke Bargstadt-Franke
- H01 - BASIC ELECTRIC ELEMENTS

Philipp Riess

Person

Patents Grantslast 30 patents

Resonant fin transistor (RFT)

Semiconductor devices and methods for forming semiconductor devices

Detection of environmental conditions in a semiconductor chip

Semiconductor devices

Schottky diodes having metal gate electrodes and methods of formati...

Devices formed with dual damascene process

Electronic component and a system and method for producing an elect...

Capacitor having a plurality of parallel conductive members

Capacitor structure

Schottky diodes having metal gate electrodes and methods of formati...

Capacitor structure

Semiconductor device with reduced capacitance tolerance value

MIM capacitors in semiconductor components

Capacitor structure

Semiconductor devices and methods of manufacture thereof

MIM capacitors in semiconductor components

Dual damascene process

Semiconductor device with capacitor arrangement electrically couple...

Integrated capacitor structure

Method for determining an ESD/latch-up strength of an integrated ci...

Patents Applicationslast 30 patents

Routing and Passive Components in a Direct Bonding Layer

Integrated Waveguides for Semiconductor Technology

INTEGRATED CAPACITOR

INTEGRATED CAPACITOR

METHODS AND APPARATUS FOR IMPLEMENTING CAPACITORS IN SEMICONDUCTOR...

RESONANT FIN TRANSISTOR (RFT)

Semiconductor devices and methods for forming semiconductor devices

Devices Formed With Dual Damascene Process

SEMICONDUCTOR DEVICES

Schottky Diodes Having Metal Gate Electrodes and Methods of Formati...

DETECTION OF ENVIRONMENTAL CONDITIONS IN A SEMICONDUCTOR CHIP

Capacitor Structure

Schottky Diodes Having Metal Gate Electrodes And Methods of Formati...

Semiconductor Devices and Methods of Manufacture Thereof

MIM Capacitors in Semiconductor Components

Devices Formed With Dual Damascene Process

Semiconductor Device with Reduced Capacitance Tolerance Value

Capacitor Structure

SEMICONDUCTOR DEVICE

Dual Damascene Process

MIM Capacitors in Semiconductor Components

Semiconductor Devices and Methods of Manufacture Thereof

Semiconductor Device with Reduced Capacitance Tolerance Value

Capacitor Structure

INTEGRATED CAPACITOR STRUCTURE

Electronic component and a system and method for producing an elect...

Transistor comprising fill areas in the source drain and/or drain r...

Method for determining an ESD/latch-up strength of an integrated ci...