Philippe Boivin

Person

Venelles, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Chip containing an onboard non-volatile memory comprising a phase-c...
- Patent number 12,232,435
- Issue date Feb 18, 2025
- STMicroelectronics (Crolles 2) SAS
- Franck Arnaud
- G11 - INFORMATION STORAGE
Information Patent Grant
Insulation of phase-change memory cells
- Patent number 12,213,392
- Issue date Jan 28, 2025
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
Information Patent Grant
Self-referenced and regulated sensing solution for phase change mem...
- Patent number 12,176,030
- Issue date Dec 24, 2024
- Universite d'Aix-Marseille
- Jean-Michel Portal
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory cell having an ovonic threshold switch
- Patent number 12,096,640
- Issue date Sep 17, 2024
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
Information Patent Grant
Phase-change memory
- Patent number 12,004,432
- Issue date Jun 4, 2024
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
Information Patent Grant
Phase-change memory cell having a compact structure
- Patent number 11,957,067
- Issue date Apr 9, 2024
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit including transistors having a common base
- Patent number 11,882,707
- Issue date Jan 23, 2024
- STMicroelectro (Rousset) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-referenced and regulated sensing solution for phase change mem...
- Patent number 11,875,847
- Issue date Jan 16, 2024
- Universite d'Aix-Marseille
- Jean-Michel Portal
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit including bipolar transistors
- Patent number 11,818,901
- Issue date Nov 14, 2023
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
Information Patent Grant
Phase-change memory with an insulating layer on a cavity sidewall
- Patent number 11,800,821
- Issue date Oct 24, 2023
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
Information Patent Grant
Chip containing an onboard non-volatile memory comprising a phase-c...
- Patent number 11,653,582
- Issue date May 16, 2023
- STMicroelectronics (Crolles 2) SAS
- Franck Arnaud
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming resistive memory cell having an ovonic threshold...
- Patent number 11,637,144
- Issue date Apr 25, 2023
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change memory with insulated walls
- Patent number 11,411,177
- Issue date Aug 9, 2022
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integration of bulk and SOI transistors
- Patent number 11,329,067
- Issue date May 10, 2022
- STMicroelectronics (Crolles 2) SAS
- Jean-Jacques Fagot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including transistors having a common base
- Patent number 11,211,428
- Issue date Dec 28, 2021
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including bipolar transistors
- Patent number 11,152,430
- Issue date Oct 19, 2021
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating resistive memory cells
- Patent number 11,114,614
- Issue date Sep 7, 2021
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell having an ovonic threshold switch
- Patent number 11,114,502
- Issue date Sep 7, 2021
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change memory cell having a compact structure
- Patent number 11,031,550
- Issue date Jun 8, 2021
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing transistors, in particular selection transisto...
- Patent number 10,998,378
- Issue date May 4, 2021
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integration of bulk and SOI transistors
- Patent number 10,714,501
- Issue date Jul 14, 2020
- STMicroelectronics (Rousset) SAS
- Jean-Jacques Fagot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell having a compact structure
- Patent number 10,707,270
- Issue date Jul 7, 2020
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive RAM memory cell
- Patent number 10,482,957
- Issue date Nov 19, 2019
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for producing transistors, in particular selection transisto...
- Patent number 10,431,630
- Issue date Oct 1, 2019
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming MOS and bipolar transistors
- Patent number 10,381,344
- Issue date Aug 13, 2019
- STMicroelectronics (Crolles 2) SAS
- Olivier Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating resistive memory cells
- Patent number 10,319,906
- Issue date Jun 11, 2019
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Connecting bar
- Patent number 10,304,775
- Issue date May 28, 2019
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell having a compact structure
- Patent number 10,283,563
- Issue date May 7, 2019
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bipolar transistor
- Patent number 10,128,314
- Issue date Nov 13, 2018
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a vertical MOS transistor
- Patent number 9,941,390
- Issue date Apr 10, 2018
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRONIC DEVICE
- Publication number 20240407272
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Philippe BOIVIN
Information Patent Application
RESISTIVE MEMORY CELL HAVING AN OVONIC THRESHOLD SWITCH
- Publication number 20240407179
- Publication date Dec 5, 2024
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
Information Patent Application
PHASE-CHANGE MEMORY
- Publication number 20240276894
- Publication date Aug 15, 2024
- STMicroelectronics (Crolles 2) SAS
- Philippe BOIVIN
Information Patent Application
SELF-REFERENCED AND REGULATED SENSING SOLUTION FOR PHASE CHANGE MEM...
- Publication number 20240153557
- Publication date May 9, 2024
- UNIVERSITE D'AIX-MARSEILLE
- Jean-Michel PORTAL
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE
- Publication number 20240081160
- Publication date Mar 7, 2024
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- G11 - INFORMATION STORAGE
Information Patent Application
CHIP CONTAINING AN ONBOARD NON-VOLATILE MEMORY COMPRISING A PHASE-C...
- Publication number 20230263082
- Publication date Aug 17, 2023
- STMicroelectronics (Crolles 2) SAS
- Franck ARNAUD
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-REFERENCED AND REGULATED SENSING SOLUTION FOR PHASE CHANGE MEM...
- Publication number 20230260574
- Publication date Aug 17, 2023
- UNIVERSITE D'AIX-MARSEILLE
- Jean-Michel PORTAL
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY CELL HAVING AN OVONIC THRESHOLD SWITCH
- Publication number 20230240082
- Publication date Jul 27, 2023
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
Information Patent Application
INTEGRATED CIRCUIT COMPRISING A NON-VOLATILE MEMORY OF THE EEPROM T...
- Publication number 20220367497
- Publication date Nov 17, 2022
- STMicroelectronics (Rousset) SAS
- Francois TAILLIET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY
- Publication number 20220336736
- Publication date Oct 20, 2022
- STMicroelectronics (Crolles 2) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY
- Publication number 20220140232
- Publication date May 5, 2022
- STMicroelectronics (Crolles 2) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY
- Publication number 20220140233
- Publication date May 5, 2022
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED TRACK
- Publication number 20220130904
- Publication date Apr 28, 2022
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY
- Publication number 20220123119
- Publication date Apr 21, 2022
- STMicroelectronics (Rousset) SAS
- Christian RIVERO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING TRANSISTORS HAVING A COMMON BASE
- Publication number 20220115441
- Publication date Apr 14, 2022
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING BIPOLAR TRANSISTORS
- Publication number 20220020816
- Publication date Jan 20, 2022
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATION OF PHASE-CHANGE MEMORY CELLS
- Publication number 20210408374
- Publication date Dec 30, 2021
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL HAVING AN OVONIC THRESHOLD SWITCH
- Publication number 20210384257
- Publication date Dec 9, 2021
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE
- Publication number 20210280779
- Publication date Sep 9, 2021
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY
- Publication number 20200381617
- Publication date Dec 3, 2020
- STMicroelectronics (Crolles 2) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF BULK AND SOI TRANSISTORS
- Publication number 20200303423
- Publication date Sep 24, 2020
- STMicroelectronics (Crolles 2) SAS
- Jean-Jacques FAGOT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL
- Publication number 20200098825
- Publication date Mar 26, 2020
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING TRANSISTORS, IN PARTICULAR SELECTION TRANSISTO...
- Publication number 20190371858
- Publication date Dec 5, 2019
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE
- Publication number 20190326510
- Publication date Oct 24, 2019
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING TRANSISTORS HAVING A COMMON BASE
- Publication number 20190312087
- Publication date Oct 10, 2019
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING BIPOLAR TRANSISTORS
- Publication number 20190312088
- Publication date Oct 10, 2019
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FABRICATING RESISTIVE MEMORY CELLS
- Publication number 20190259942
- Publication date Aug 22, 2019
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL HAVING A COMPACT STRUCTURE
- Publication number 20190214434
- Publication date Jul 11, 2019
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHIP CONTAINING AN ONBOARD NON-VOLATILE MEMORY COMPRISING A PHASE-C...
- Publication number 20190140176
- Publication date May 9, 2019
- STMicroelectronics (Crolles 2) SAS
- Franck ARNAUD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF BULK AND SOI TRANSISTORS
- Publication number 20190057981
- Publication date Feb 21, 2019
- STMicroelectronics (Rousset) SAS
- Jean-Jacques FAGOT
- H01 - BASIC ELECTRIC ELEMENTS

Philippe Boivin

Person

Patents Grantslast 30 patents

Chip containing an onboard non-volatile memory comprising a phase-c...

Insulation of phase-change memory cells

Self-referenced and regulated sensing solution for phase change mem...

Resistive memory cell having an ovonic threshold switch

Phase-change memory

Phase-change memory cell having a compact structure

Integrated circuit including transistors having a common base

Self-referenced and regulated sensing solution for phase change mem...

Integrated circuit including bipolar transistors

Phase-change memory with an insulating layer on a cavity sidewall

Chip containing an onboard non-volatile memory comprising a phase-c...

Method of forming resistive memory cell having an ovonic threshold...

Phase-change memory with insulated walls

Co-integration of bulk and SOI transistors

Integrated circuit including transistors having a common base

Integrated circuit including bipolar transistors

Process for fabricating resistive memory cells

Resistive memory cell having an ovonic threshold switch

Phase-change memory cell having a compact structure

Method for producing transistors, in particular selection transisto...

Co-integration of bulk and SOI transistors

Resistive memory cell having a compact structure

Resistive RAM memory cell

Method for producing transistors, in particular selection transisto...

Method of forming MOS and bipolar transistors

Process for fabricating resistive memory cells

Connecting bar

Resistive memory cell having a compact structure

Vertical bipolar transistor

Method of fabricating a vertical MOS transistor

Patents Applicationslast 30 patents

ELECTRONIC DEVICE

RESISTIVE MEMORY CELL HAVING AN OVONIC THRESHOLD SWITCH

PHASE-CHANGE MEMORY

SELF-REFERENCED AND REGULATED SENSING SOLUTION FOR PHASE CHANGE MEM...

PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE

CHIP CONTAINING AN ONBOARD NON-VOLATILE MEMORY COMPRISING A PHASE-C...

SELF-REFERENCED AND REGULATED SENSING SOLUTION FOR PHASE CHANGE MEM...

RESISTIVE MEMORY CELL HAVING AN OVONIC THRESHOLD SWITCH

INTEGRATED CIRCUIT COMPRISING A NON-VOLATILE MEMORY OF THE EEPROM T...

PHASE-CHANGE MEMORY

PHASE-CHANGE MEMORY

PHASE-CHANGE MEMORY

BURIED TRACK

NON-VOLATILE MEMORY

INTEGRATED CIRCUIT INCLUDING TRANSISTORS HAVING A COMMON BASE

INTEGRATED CIRCUIT INCLUDING BIPOLAR TRANSISTORS

INSULATION OF PHASE-CHANGE MEMORY CELLS

RESISTIVE MEMORY CELL HAVING AN OVONIC THRESHOLD SWITCH

PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE

PHASE-CHANGE MEMORY

CO-INTEGRATION OF BULK AND SOI TRANSISTORS

RESISTIVE MEMORY CELL

METHOD FOR PRODUCING TRANSISTORS, IN PARTICULAR SELECTION TRANSISTO...

PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE

INTEGRATED CIRCUIT INCLUDING TRANSISTORS HAVING A COMMON BASE

INTEGRATED CIRCUIT INCLUDING BIPOLAR TRANSISTORS

PROCESS FOR FABRICATING RESISTIVE MEMORY CELLS

RESISTIVE MEMORY CELL HAVING A COMPACT STRUCTURE

CHIP CONTAINING AN ONBOARD NON-VOLATILE MEMORY COMPRISING A PHASE-C...

CO-INTEGRATION OF BULK AND SOI TRANSISTORS