Philippe Lefaucheux

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Patents Grantslast 30 patents

Information Patent Grant
Selective etching with fluorine, oxygen and noble gas containing pl...
- Patent number 12,131,914
- Issue date Oct 29, 2024
- Tokyo Electron Limited
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching method
- Patent number 11,120,999
- Issue date Sep 14, 2021
- Tokyo Electron Limited
- Koichi Yatsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep anisotropic silicon etch method
- Patent number 8,012,365
- Issue date Sep 6, 2011
- STMicroelectronics, S.A.
- Remi Dussart
- B81 - MICRO-STRUCTURAL TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Selective Etching with Fluorine, Oxygen and Noble Gas Containing Pl...
- Publication number 20220199418
- Publication date Jun 23, 2022
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD AND ETCHING APPARATUS
- Publication number 20220102160
- Publication date Mar 31, 2022
- TOKYO ELECTRON LIMITED
- Shigeru TAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING METHOD
- Publication number 20200381264
- Publication date Dec 3, 2020
- TOKYO ELECTRON LIMITED
- Koichi YATSUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep anisotropic silicon etch method
- Publication number 20080293250
- Publication date Nov 27, 2008
- Remi Dussart
- B81 - MICRO-STRUCTURAL TECHNOLOGY