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Philippe Meunier-Beillard
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Eindhoven, NL
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Patents Grants
last 30 patents
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Patent Grant
Method and apparatus for forming expitaxial layers
Patent number
7,615,390
Issue date
Nov 10, 2009
NXP B.V.
Philippe Meunier-Beillard
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of epitaxial deoposition of an n-doped silicon layer
Patent number
7,605,060
Issue date
Oct 20, 2009
NXP B.V.
Philippe Meunier-Beillard
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
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Patent Application
Bipolar Transistor And Method Of Manufacturing The Same
Publication number
20080083968
Publication date
Apr 10, 2008
Koninklijke Philips Electronics N.V.
Andreas Hubertus Montree
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
Method of epitaxial deoposition of an n-doped silicon layer
Publication number
20060205185
Publication date
Sep 14, 2006
Koninklijke Philips Electronics N.V.
Philippe Meunier-Beillard
C30 - CRYSTAL GROWTH
Information
Patent Application
Method and apparatus for forming expitaxial layers
Publication number
20060040477
Publication date
Feb 23, 2006
Philippe Meunier-Beillard
C30 - CRYSTAL GROWTH