Philippe Renaud

Person

Chandler, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistors with self-aligned source-connected field plates
- Patent number 12,349,433
- Issue date Jul 1, 2025
- NXP USA, INC.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amplifier with integrated temperature sensor
- Patent number 11,621,206
- Issue date Apr 4, 2023
- NXP USA, INC.
- Lionel Mongin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device and method of fabrication
- Patent number 11,522,081
- Issue date Dec 6, 2022
- NXP USA, INC.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device and method of fabrication
- Patent number 10,886,399
- Issue date Jan 5, 2021
- NXP USA, INC.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor devices and methods for their fabrication
- Patent number 10,312,368
- Issue date Jun 4, 2019
- NXP USA, INC.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary gallium nitride integrated circuits
- Patent number 10,199,477
- Issue date Feb 5, 2019
- NXP USA, INC.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating complementary gallium nitride integrated cir...
- Patent number 9,978,852
- Issue date May 22, 2018
- NXP USA, INC.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched Faraday shielding
- Patent number 9,520,367
- Issue date Dec 13, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Zihao M. Gao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE WITH ELECTRICAL COMPONENT FORMED OVER A CAVITY AND METHOD TH...
- Publication number 20250210409
- Publication date Jun 26, 2025
- NXP USA, Inc.
- Philippe RENAUD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELF-ALIGNED GATE AND FIELD PLATE AND MET...
- Publication number 20250063753
- Publication date Feb 20, 2025
- NXP USA, Inc.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH DIELECTRIC SPACERS AND METHODS OF FABRICATION THEREOF
- Publication number 20250006818
- Publication date Jan 2, 2025
- NXP USA, Inc.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH RECESSED FIELD PLATES AND METHODS OF FABRICATION T...
- Publication number 20250006802
- Publication date Jan 2, 2025
- NXP USA, Inc.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A FIELD PLATE HAVING A RECESSED REGION AN...
- Publication number 20240222443
- Publication date Jul 4, 2024
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A RECESSED FIELD PLATE AND METHOD OF FABR...
- Publication number 20240222442
- Publication date Jul 4, 2024
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH SELF-ALIGNED SOURCE-CONNECTED FIELD PLATES
- Publication number 20230197795
- Publication date Jun 22, 2023
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CURRENT-CARRYING ELECTRODES AND A CONDUCT...
- Publication number 20230124686
- Publication date Apr 20, 2023
- NXP USA, Inc.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMPLIFIER WITH INTEGRATED TEMPERATURE SENSOR
- Publication number 20220044982
- Publication date Feb 10, 2022
- NXP USA, Inc.
- Lionel Mongin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION
- Publication number 20210083107
- Publication date Mar 18, 2021
- NXP USA, Inc.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION
- Publication number 20200083370
- Publication date Mar 12, 2020
- NXP USA, Inc.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY GALLIUM NITRIDE INTEGRATED CIRCUITS
- Publication number 20180277651
- Publication date Sep 27, 2018
- NXP USA, Inc.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Semiconductor Devices and Methods for their Fabrication
- Publication number 20170194420
- Publication date Jul 6, 2017
- NXP USA, Inc.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY GALLIUM NITRIDE INTEGRATED CIRCUITS AND METHODS OF TH...
- Publication number 20160372575
- Publication date Dec 22, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCHED FARADAY SHIELDING
- Publication number 20160056114
- Publication date Feb 25, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Zihao M. Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Semiconductor Devices and Methods for their Fabrication
- Publication number 20160035822
- Publication date Feb 4, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY GALLIUM NITRIDE INTEGRATED CIRCUITS AND METHODS OF TH...
- Publication number 20150041820
- Publication date Feb 12, 2015
- PHILIPPE RENAUD
- H01 - BASIC ELECTRIC ELEMENTS

Philippe Renaud

Person

Patents Grantslast 30 patents

Transistors with self-aligned source-connected field plates

Amplifier with integrated temperature sensor

High voltage semiconductor device and method of fabrication

High voltage semiconductor device and method of fabrication

High voltage semiconductor devices and methods for their fabrication

Complementary gallium nitride integrated circuits

Methods of fabricating complementary gallium nitride integrated cir...

Trenched Faraday shielding

Patents Applicationslast 30 patents

DEVICE WITH ELECTRICAL COMPONENT FORMED OVER A CAVITY AND METHOD TH...

SEMICONDUCTOR DEVICE WITH SELF-ALIGNED GATE AND FIELD PLATE AND MET...

TRANSISTORS WITH DIELECTRIC SPACERS AND METHODS OF FABRICATION THEREOF

TRANSISTORS WITH RECESSED FIELD PLATES AND METHODS OF FABRICATION T...

SEMICONDUCTOR DEVICE WITH A FIELD PLATE HAVING A RECESSED REGION AN...

SEMICONDUCTOR DEVICE WITH A RECESSED FIELD PLATE AND METHOD OF FABR...

TRANSISTORS WITH SELF-ALIGNED SOURCE-CONNECTED FIELD PLATES

SEMICONDUCTOR DEVICE WITH CURRENT-CARRYING ELECTRODES AND A CONDUCT...

AMPLIFIER WITH INTEGRATED TEMPERATURE SENSOR

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION

COMPLEMENTARY GALLIUM NITRIDE INTEGRATED CIRCUITS

High Voltage Semiconductor Devices and Methods for their Fabrication

COMPLEMENTARY GALLIUM NITRIDE INTEGRATED CIRCUITS AND METHODS OF TH...

TRENCHED FARADAY SHIELDING

High Voltage Semiconductor Devices and Methods for their Fabrication

COMPLEMENTARY GALLIUM NITRIDE INTEGRATED CIRCUITS AND METHODS OF TH...