Pierre Caubet

Person

Le Versoud, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Process for forming a layer of equiaxed titanium nitride and a MOSF...
- Patent number 10,211,059
- Issue date Feb 19, 2019
- STMicroelectronics (Crolles 2) SAS
- Pierre Caubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having a gate comprising a titanium nitride layer and me...
- Patent number 9,953,837
- Issue date Apr 24, 2018
- STMicroelectronics (Crolles 2) SAS
- Pierre Caubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a layer of equiaxed titanium nitride and a MOSF...
- Patent number 9,691,871
- Issue date Jun 27, 2017
- STMicroelectronics (Crolles 2) SAS
- Pierre Caubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optoelectronic device, in particular memory device
- Patent number 9,536,599
- Issue date Jan 3, 2017
- SMICROELECTRONICS (CROLLES 2) SAS
- Pierre Caubet
- G02 - OPTICS
Information Patent Grant
Optoelectronic device, in particular memory device
- Patent number 9,530,489
- Issue date Dec 27, 2016
- STMicroelectronics (Crolles 2) SAS
- Pierre Caubet
- G02 - OPTICS
Information Patent Grant
Method for producing a metal-gate MOS transistor, in particular a P...
- Patent number 9,257,518
- Issue date Feb 9, 2016
- STMicrolectronics (Crolles 2) SAS
- Sylvain Baudot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depositing a low-diffusion TiAlN layer and insulated gat...
- Patent number 9,029,254
- Issue date May 12, 2015
- STMicroelectronics (Crolles 2) SAS
- Pierre Caubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors having a gate comprising a titanium nitride layer
- Patent number 9,000,596
- Issue date Apr 7, 2015
- STMicroelectronics (Crolles 2) SAS
- Pierre Caubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implementation of a metal barrier in an integrated electronic circuit
- Patent number 8,053,871
- Issue date Nov 8, 2011
- STMicroelectronics S.A.
- Pierre Caubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production of a self-aligned CuSiN barrier
- Patent number 8,018,062
- Issue date Sep 13, 2011
- STMicroelectronics S.A.
- Pierre Caubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated electrooptic system
- Patent number 8,013,284
- Issue date Sep 6, 2011
- STMicroelectronics S.A.
- Pierre Caubet
- G02 - OPTICS
Information Patent Grant
Electronic component comprising a titanium carbonitride (TiCN) barr...
- Patent number 7,851,915
- Issue date Dec 14, 2010
- STMicroelectronics S.A.
- Pierre Caubet
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Production of a self-aligned CuSiN barrier
- Patent number 7,687,399
- Issue date Mar 30, 2010
- STMicroelectronics S.A.
- Pierre Caubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated electrooptic system
- Patent number 7,667,173
- Issue date Feb 23, 2010
- STMicroelectronics S.A.
- Pierre Caubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implementation of a metal barrier in an integrated electronic circuit
- Patent number 7,601,636
- Issue date Oct 13, 2009
- STMicroelectronics S.A.
- Laurin Dumas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming integrated circuit comprising copper lines
- Patent number 7,531,447
- Issue date May 12, 2009
- STMicroelectronics S.A.
- Pierre Caubet
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PROCESS FOR FORMING A LAYER OF EQUIAXED TITANIUM NITRIDE AND A MOSF...
- Publication number 20170256625
- Publication date Sep 7, 2017
- STMicroelectronics (Crolles 2) SAS
- Pierre Caubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FORMING A LAYER OF EQUIAXED TITANIUM NITRIDE AND A MOSF...
- Publication number 20170179250
- Publication date Jun 22, 2017
- STMicroelectronics (Crolles 2) SAS
- Pierre Caubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTOELECTRONIC DEVICE, IN PARTICULAR MEMORY DEVICE
- Publication number 20160372183
- Publication date Dec 22, 2016
- STMicroelectronics (Crolles 2) SAS
- PIERRE CAUBET
- G02 - OPTICS
Information Patent Application
TRANSISTOR HAVING A GATE COMPRISING A TITANIUM NITRIDE LAYER AND ME...
- Publication number 20150200099
- Publication date Jul 16, 2015
- STMicroelectronics (Crolles 2) SAS
- PIERRE CAUBET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTOELECTRONIC DEVICE, IN PARTICULAR MEMORY DEVICE
- Publication number 20150117128
- Publication date Apr 30, 2015
- STMicroelectronics (Crolles 2) SAS
- Pierre CAUBET
- G02 - OPTICS
Information Patent Application
METHOD FOR PRODUCING A METAL-GATE MOS TRANSISTOR, IN PARTICULAR A P...
- Publication number 20140319616
- Publication date Oct 30, 2014
- STMicroelectronics (Crolles 2) SAS
- Sylvain Baudot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPOSITING A LOW-DIFFUSION TIALN LAYER AND INSULATED GAT...
- Publication number 20140097504
- Publication date Apr 10, 2014
- Pierre CAUBET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS HAVING A GATE COMPRISING A TITANIUM NITRIDE LAYER AND M...
- Publication number 20130001708
- Publication date Jan 3, 2013
- Pierre Caubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLEMENTATION OF A METAL BARRIER IN AN INTEGRATED ELECTRONIC CIRCUIT
- Publication number 20100155950
- Publication date Jun 24, 2010
- STMicroelectronics S.A.
- Laurin Dumas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION OF A SELF-ALIGNED CUSIN BARRIER
- Publication number 20100133634
- Publication date Jun 3, 2010
- STMicroelectronics S.A.
- Pierre Caubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED ELECTROOPTIC SYSTEM
- Publication number 20100108867
- Publication date May 6, 2010
- STMicroelectronics S.A.
- Pierre Caubet
- G02 - OPTICS
Information Patent Application
Integrated electrooptic system
- Publication number 20090008531
- Publication date Jan 8, 2009
- STMicroelectronics S.A.
- Pierre Caubet
- G02 - OPTICS
Information Patent Application
ELECTRONIC COMPONENT COMPRISING A TITANIUM CARBONITRIDE (TiCN) BARR...
- Publication number 20080290417
- Publication date Nov 27, 2008
- STMicroelectronics S.A.
- Pierre Caubet
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
IMPLEMENTATION OF A METAL BARRIER IN AN INTEGRATED ELECTRONIC CIRCUIT
- Publication number 20080088022
- Publication date Apr 17, 2008
- STMicroelectronics S.A.
- Laurin Dumas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Production of a self-aligned CuSiN barrier
- Publication number 20070035029
- Publication date Feb 15, 2007
- STMicroelectronics S.A.
- Pierre Caubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit comprising copper lines and process for forming...
- Publication number 20060060976
- Publication date Mar 23, 2006
- STMicroelectronics S.A.
- Pierre Caubet
- H01 - BASIC ELECTRIC ELEMENTS

Pierre Caubet

Person

Patents Grantslast 30 patents

Process for forming a layer of equiaxed titanium nitride and a MOSF...

Transistor having a gate comprising a titanium nitride layer and me...

Process for forming a layer of equiaxed titanium nitride and a MOSF...

Optoelectronic device, in particular memory device

Optoelectronic device, in particular memory device

Method for producing a metal-gate MOS transistor, in particular a P...

Method for depositing a low-diffusion TiAlN layer and insulated gat...

Transistors having a gate comprising a titanium nitride layer

Implementation of a metal barrier in an integrated electronic circuit

Production of a self-aligned CuSiN barrier

Integrated electrooptic system

Electronic component comprising a titanium carbonitride (TiCN) barr...

Production of a self-aligned CuSiN barrier

Integrated electrooptic system

Implementation of a metal barrier in an integrated electronic circuit

Process for forming integrated circuit comprising copper lines

Patents Applicationslast 30 patents

PROCESS FOR FORMING A LAYER OF EQUIAXED TITANIUM NITRIDE AND A MOSF...

PROCESS FOR FORMING A LAYER OF EQUIAXED TITANIUM NITRIDE AND A MOSF...

OPTOELECTRONIC DEVICE, IN PARTICULAR MEMORY DEVICE

TRANSISTOR HAVING A GATE COMPRISING A TITANIUM NITRIDE LAYER AND ME...

OPTOELECTRONIC DEVICE, IN PARTICULAR MEMORY DEVICE

METHOD FOR PRODUCING A METAL-GATE MOS TRANSISTOR, IN PARTICULAR A P...

METHOD FOR DEPOSITING A LOW-DIFFUSION TIALN LAYER AND INSULATED GAT...

TRANSISTORS HAVING A GATE COMPRISING A TITANIUM NITRIDE LAYER AND M...

IMPLEMENTATION OF A METAL BARRIER IN AN INTEGRATED ELECTRONIC CIRCUIT

PRODUCTION OF A SELF-ALIGNED CUSIN BARRIER

INTEGRATED ELECTROOPTIC SYSTEM

Integrated electrooptic system

ELECTRONIC COMPONENT COMPRISING A TITANIUM CARBONITRIDE (TiCN) BARR...

IMPLEMENTATION OF A METAL BARRIER IN AN INTEGRATED ELECTRONIC CIRCUIT

Production of a self-aligned CuSiN barrier

Integrated circuit comprising copper lines and process for forming...