Pierre Gibart

Person

Chateaueuf De Grasse, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Process for growth of low dislocation density GaN
- Patent number 8,283,239
- Issue date Oct 9, 2012
- Saint-Gobain Cristaux & Detecteurs
- Bernard Beaumont
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing an epitaxial layer of galium nitride
- Patent number 8,030,101
- Issue date Oct 4, 2011
- Saint-Gobain Cristaux et Detecteurs
- Eric Frayssinet
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing an epitalixal layer of galium nitride
- Patent number 7,560,296
- Issue date Jul 14, 2009
- Lumilog
- Eric Frayssinet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing by vapour-phase epitaxy a gallium nitride film...
- Patent number 7,455,729
- Issue date Nov 25, 2008
- Lumilog
- Bernard Beaumont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing gallium nitride substrates by lateral overgrowth thro...
- Patent number 7,445,673
- Issue date Nov 4, 2008
- Lumilog
- Bernard Beaumont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing an epitaxial layer of gallium nitride
- Patent number 7,118,929
- Issue date Oct 10, 2006
- Lumilog
- Eric Frayssinet
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing an epitaxial layer of gallium nitride
- Patent number 6,802,902
- Issue date Oct 12, 2004
- Lumilog
- Bernard Beaumont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a gallium nitride epitaxial layer
- Patent number 6,325,850
- Issue date Dec 4, 2001
- Centre National de la Recherche Scientifique (Cnrs)
- Bernard Beaumont
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
PROCESS FOR PRODUCING AN EPITAXIAL LAYER OF GALIUM NITRIDE
- Publication number 20100001289
- Publication date Jan 7, 2010
- Eric Frayssinet
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for Growth of Low Dislocation Density Gan
- Publication number 20090278136
- Publication date Nov 12, 2009
- Bernard Beaumont
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing an epitalixal layer of galium nitride
- Publication number 20070072320
- Publication date Mar 29, 2007
- Eric Frayssinet
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing gallium nitride substrates by lateral overgrowth thro...
- Publication number 20060266281
- Publication date Nov 30, 2006
- Bernard Beaumont
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing by vapour-phase epitaxy a gallium nitride film...
- Publication number 20060099781
- Publication date May 11, 2006
- Bernard Beaumont
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing an epitaxial layer of gallium nitride
- Publication number 20040137732
- Publication date Jul 15, 2004
- Eric Frayssinet
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing an epitaxial layer of gallium nitride
- Publication number 20020152952
- Publication date Oct 24, 2002
- Bernard Beaumont
- C30 - CRYSTAL GROWTH

Pierre Gibart

Person

Patents Grantslast 30 patents

Process for growth of low dislocation density GaN

Process for producing an epitaxial layer of galium nitride

Process for producing an epitalixal layer of galium nitride

Method for producing by vapour-phase epitaxy a gallium nitride film...

Manufacturing gallium nitride substrates by lateral overgrowth thro...

Process for producing an epitaxial layer of gallium nitride

Process for producing an epitaxial layer of gallium nitride

Method for producing a gallium nitride epitaxial layer

Patents Applicationslast 30 patents

PROCESS FOR PRODUCING AN EPITAXIAL LAYER OF GALIUM NITRIDE

Process for Growth of Low Dislocation Density Gan

Process for producing an epitalixal layer of galium nitride

Manufacturing gallium nitride substrates by lateral overgrowth thro...

Method for producing by vapour-phase epitaxy a gallium nitride film...

Process for producing an epitaxial layer of gallium nitride

Process for producing an epitaxial layer of gallium nitride