Pierre Morin

Person

Kessel-Lo, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Method to induce strain in FINFET channels from an adjacent region
- Patent number 11,948,943
- Issue date Apr 2, 2024
- Bell Semiconductor, LLC
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chip containing an onboard non-volatile memory comprising a phase-c...
- Patent number 11,653,582
- Issue date May 16, 2023
- STMicroelectronics (Crolles 2) SAS
- Franck Arnaud
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to induce strain in finFET channels from an adjacent region
- Patent number 11,587,928
- Issue date Feb 21, 2023
- Bell Semiconductor, LLC
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in 3-D microfabricated structures
- Patent number 11,569,384
- Issue date Jan 31, 2023
- STMicroelectronics, Inc.
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin and related methods
- Patent number 11,302,812
- Issue date Apr 12, 2022
- STMicroelectronics, Inc.
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated tensile strained silicon NFET and compressive strained s...
- Patent number 11,133,331
- Issue date Sep 28, 2021
- STMicroelectronics, Inc.
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory
- Patent number 10,903,423
- Issue date Jan 26, 2021
- STMicroelectronics (Crolles 2) SAS
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin and related methods
- Patent number 10,854,750
- Issue date Dec 1, 2020
- STMicroelectronics, Inc.
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in finFET channels from an adjacent region
- Patent number 10,854,606
- Issue date Dec 1, 2020
- STMicroelectronics, Inc.
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in 3-D microfabricated structures
- Patent number 10,847,654
- Issue date Nov 24, 2020
- STMicroelectronics, Inc.
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell comprising a phase-change material
- Patent number 10,658,578
- Issue date May 19, 2020
- STMicroelectronics (Crolles 2) SAS
- Pierre Morin
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to induce strain in finFET channels from an adjacent region
- Patent number 10,515,965
- Issue date Dec 24, 2019
- STMicroelectronics, Inc.
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin and related methods
- Patent number 10,505,043
- Issue date Dec 10, 2019
- STMicroelectronics, Inc.
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned silicon germanium FinFET with relaxed channel region
- Patent number 10,256,341
- Issue date Apr 9, 2019
- STMicroelectronics, Inc.
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integration of tensile silicon and compressive silicon germanium
- Patent number 10,037,922
- Issue date Jul 31, 2018
- STMicroelectronics, Inc.
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION
- Publication number 20240203995
- Publication date Jun 20, 2024
- Bell Semiconductor, LLC
- Pierre MORIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO INDUCE STRAIN IN 3-D MICROFABRICATED STRUCTURES
- Publication number 20230352586
- Publication date Nov 2, 2023
- STMicroelectronics, Inc.
- Nicolas LOUBET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHIP CONTAINING AN ONBOARD NON-VOLATILE MEMORY COMPRISING A PHASE-C...
- Publication number 20230263082
- Publication date Aug 17, 2023
- STMicroelectronics (Crolles 2) SAS
- Franck ARNAUD
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION
- Publication number 20230163130
- Publication date May 25, 2023
- Bell Semiconductor, LLC
- Pierre MORIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION
- Publication number 20210057414
- Publication date Feb 25, 2021
- STMicroelectronics, Inc.
- Pierre MORIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN AND RELATED METHODS
- Publication number 20210050449
- Publication date Feb 18, 2021
- STMicroelectronics, Inc.
- Pierre MORIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO INDUCE STRAIN IN 3-D MICROFABRICATED STRUCTURES
- Publication number 20210036156
- Publication date Feb 4, 2021
- STMicroelectronics, Inc.
- Nicolas LOUBET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY
- Publication number 20200119269
- Publication date Apr 16, 2020
- STMicroelectronics (Crolles 2) SAS
- Pierre MORIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION
- Publication number 20200098760
- Publication date Mar 26, 2020
- STMicroelectronics, Inc.
- Pierre MORIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN AND RELATED METHODS
- Publication number 20200083376
- Publication date Mar 12, 2020
- STMicroelectronics, Inc.
- Pierre MORIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO INDUCE STRAIN IN 3-D MICROFABRICATED STRUCTURES
- Publication number 20200020808
- Publication date Jan 16, 2020
- STMicroelectronics, Inc.
- Nicolas LOUBET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN AND RELATED METHODS
- Publication number 20190189802
- Publication date Jun 20, 2019
- STMicroelectronics, Inc.
- Pierre MORIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHIP CONTAINING AN ONBOARD NON-VOLATILE MEMORY COMPRISING A PHASE-C...
- Publication number 20190140176
- Publication date May 9, 2019
- STMicroelectronics (Crolles 2) SAS
- Franck ARNAUD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL COMPRISING A PHASE-CHANGE MATERIAL
- Publication number 20190131521
- Publication date May 2, 2019
- STMicroelectronics (Crolles 2) SAS
- Pierre MORIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL COMPRISING A PHASE-CHANGE MATERIAL
- Publication number 20190131520
- Publication date May 2, 2019
- STMicroelectronics (Crolles 2) SAS
- Pierre MORIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED TENSILE STRAINED SILICON NFET AND COMPRESSIVE STRAINED S...
- Publication number 20190081079
- Publication date Mar 14, 2019
- STMicroelectronics, Inc.
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION
- Publication number 20180331106
- Publication date Nov 15, 2018
- STMicroelectronics, Inc.
- Pierre MORIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SILICON GERMANIUM FINFET WITH RELAXED CHANNEL REGION
- Publication number 20180158945
- Publication date Jun 7, 2018
- STMicroelectronics, Inc.
- Pierre MORIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF TENSILE SILICON AND COMPRESSIVE SILICON GERMANIUM
- Publication number 20180144991
- Publication date May 24, 2018
- STMicroelectronics, Inc.
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS

Pierre Morin

Person

Patents Grantslast 30 patents

Method to induce strain in FINFET channels from an adjacent region

Chip containing an onboard non-volatile memory comprising a phase-c...

Method to induce strain in finFET channels from an adjacent region

Method to induce strain in 3-D microfabricated structures

Semiconductor device with fin and related methods

Integrated tensile strained silicon NFET and compressive strained s...

Phase change memory

Semiconductor device with fin and related methods

Method to induce strain in finFET channels from an adjacent region

Method to induce strain in 3-D microfabricated structures

Memory cell comprising a phase-change material

Method to induce strain in finFET channels from an adjacent region

Semiconductor device with fin and related methods

Self-aligned silicon germanium FinFET with relaxed channel region

Co-integration of tensile silicon and compressive silicon germanium

Patents Applicationslast 30 patents

METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION

METHOD TO INDUCE STRAIN IN 3-D MICROFABRICATED STRUCTURES

CHIP CONTAINING AN ONBOARD NON-VOLATILE MEMORY COMPRISING A PHASE-C...

METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION

METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION

SEMICONDUCTOR DEVICE WITH FIN AND RELATED METHODS

METHOD TO INDUCE STRAIN IN 3-D MICROFABRICATED STRUCTURES

PHASE CHANGE MEMORY

METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION

SEMICONDUCTOR DEVICE WITH FIN AND RELATED METHODS

METHOD TO INDUCE STRAIN IN 3-D MICROFABRICATED STRUCTURES

SEMICONDUCTOR DEVICE WITH FIN AND RELATED METHODS

CHIP CONTAINING AN ONBOARD NON-VOLATILE MEMORY COMPRISING A PHASE-C...

MEMORY CELL COMPRISING A PHASE-CHANGE MATERIAL

MEMORY CELL COMPRISING A PHASE-CHANGE MATERIAL

INTEGRATED TENSILE STRAINED SILICON NFET AND COMPRESSIVE STRAINED S...

METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION

SELF-ALIGNED SILICON GERMANIUM FINFET WITH RELAXED CHANNEL REGION

CO-INTEGRATION OF TENSILE SILICON AND COMPRESSIVE SILICON GERMANIUM