Pietro Montanini

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Wrap-around contact for nanosheet device
- Patent number 12,176,404
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid complementary field effect transistor device
- Patent number 11,777,034
- Issue date Oct 3, 2023
- International Business Machines Corporation
- Ruilong Xie
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical field-effect transistor late gate recess process with impr...
- Patent number 11,575,022
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor device with bottom isolation
- Patent number 11,387,319
- Issue date Jul 12, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Robust low-k bottom spacer for VFET
- Patent number 11,201,089
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transport FET with bottom source and drain extensions
- Patent number 11,183,583
- Issue date Nov 23, 2021
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor late gate recess process with impr...
- Patent number 10,937,890
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with fully isolated source and drain regions a...
- Patent number 10,916,627
- Issue date Feb 9, 2021
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Utilizing multilayer gate spacer to reduce erosion of semiconductor...
- Patent number 10,790,393
- Issue date Sep 29, 2020
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-thermal switching slope vertical field effect transistor with d...
- Patent number 10,756,203
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-thermal switching slope vertical field effect transistor with d...
- Patent number 10,741,675
- Issue date Aug 11, 2020
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removal of epitaxy defects in transistors
- Patent number 10,699,965
- Issue date Jun 30, 2020
- International Business Machines Corporation
- Andrew Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolation in gate-all-around devices
- Patent number 10,636,694
- Issue date Apr 28, 2020
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-thermal switching slope vertical field effect transistor with d...
- Patent number 10,553,705
- Issue date Feb 4, 2020
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-thermal switching slope vertical field effect transistor with d...
- Patent number 10,546,945
- Issue date Jan 28, 2020
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolation in gate-all-around devices
- Patent number 10,453,736
- Issue date Oct 22, 2019
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming integrated circuit with gate-all-around field eff...
- Patent number 10,431,663
- Issue date Oct 1, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-thermal switching slope vertical field effect transistor with d...
- Patent number 10,388,760
- Issue date Aug 20, 2019
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet devices with CMOS epitaxy and method of forming
- Patent number 10,366,931
- Issue date Jul 30, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing bending in parallel structures in semiconductor fabrication
- Patent number 10,347,749
- Issue date Jul 9, 2019
- International Business Machines Corporation
- Balasubramanian S. Pranatharthiharan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Utilizing multilayer gate spacer to reduce erosion of semiconductor...
- Patent number 10,243,079
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet devices with CMOS epitaxy and method of forming
- Patent number 10,109,533
- Issue date Oct 23, 2018
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch-resistant spacer formation on gate structure
- Patent number 10,109,722
- Issue date Oct 23, 2018
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded shape sige for strained channel transistors
- Patent number 10,103,245
- Issue date Oct 16, 2018
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming an isolated nano-sheet transistor device and the...
- Patent number 9,984,936
- Issue date May 29, 2018
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET spacer formation on gate sidewalls, between the channel and...
- Patent number 9,806,078
- Issue date Oct 31, 2017
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded shape sige for strained channel transistors
- Patent number 9,755,051
- Issue date Sep 5, 2017
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods of forming epi for aggressive gate pitch
- Patent number 9,685,384
- Issue date Jun 20, 2017
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded shape SiGe for strained channel transistors
- Patent number 9,245,955
- Issue date Jan 26, 2016
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precision polysilicon resistors
- Patent number 9,000,564
- Issue date Apr 7, 2015
- STMicroelectronics, Inc.
- Pietro Montanini
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EXTENDED LOWER SOURCE/DRAIN FOR STACKED FIELD-EFFECT TRANSISTOR
- Publication number 20230197778
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET EPITAXY WITH FULL BOTTOM ISOLATION
- Publication number 20230178617
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAPAROUND CONTACT WITH REDUCED DISTANCE TO CHANNEL
- Publication number 20230178621
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND CONTACT FOR NANOSHEET DEVICE
- Publication number 20230099985
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID COMPLEMENTARY FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20230075966
- Publication date Mar 9, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR DEVICE WITH BOTTOM ISOLATION
- Publication number 20220367626
- Publication date Nov 17, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Transport FET with Bottom Source and Drain Extensions
- Publication number 20210336035
- Publication date Oct 28, 2021
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR LATE GATE RECESS PROCESS WITH IMPR...
- Publication number 20210151583
- Publication date May 20, 2021
- International Business Machines Corporation
- Wenyu XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR DEVICE WITH BOTTOM ISOLATION
- Publication number 20210074809
- Publication date Mar 11, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR LATE GATE RECESS PROCESS WITH IMPR...
- Publication number 20200321448
- Publication date Oct 8, 2020
- International Business Machines Corporation
- Wenyu XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR WITH FULLY ISOLATED SOURCE AND DRAIN REGIONS A...
- Publication number 20200303500
- Publication date Sep 24, 2020
- NICOLAS LOUBET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROBUST LOW-K BOTTOM SPACER FOR VFET
- Publication number 20200279780
- Publication date Sep 3, 2020
- International Business Machines Corporation
- HIROKI NIIMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...
- Publication number 20200044058
- Publication date Feb 6, 2020
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...
- Publication number 20200044057
- Publication date Feb 6, 2020
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC ISOLATION IN GATE-ALL-AROUND DEVICES
- Publication number 20190393076
- Publication date Dec 26, 2019
- International Business Machines Corporation
- ROBIN HSIN KUO CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...
- Publication number 20190259856
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...
- Publication number 20190259857
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...
- Publication number 20190259858
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING INTEGRATED CIRCUIT WITH GATE-ALL-AROUND FIELD EFF...
- Publication number 20190214473
- Publication date Jul 11, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UTILIZING MULTILAYER GATE SPACER TO REDUCE EROSION OF SEMICONDUCTOR...
- Publication number 20190172940
- Publication date Jun 6, 2019
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC ISOLATION IN GATE-ALL-AROUND DEVICES
- Publication number 20190109040
- Publication date Apr 11, 2019
- International Business Machines Corporation
- ROBIN HSIN KUO CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR WITH IMPROVED INNER SPACER
- Publication number 20190081155
- Publication date Mar 14, 2019
- GLOBALFOUNDRIES INC.
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICES WITH CMOS EPITAXY AND METHOD OF FORMING
- Publication number 20190019733
- Publication date Jan 17, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UTILIZING MULTILAYER GATE SPACER TO REDUCE EROSION OF SEMICONDUCTOR...
- Publication number 20190006506
- Publication date Jan 3, 2019
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING BENDING IN PARALLEL STRUCTURES IN SEMICONDUCTOR FABRICATION
- Publication number 20180277663
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Balasubramanian S. Pranatharthiharan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH-RESISTANT SPACER FORMATION ON GATE STRUCTURE
- Publication number 20180254331
- Publication date Sep 6, 2018
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL EMBEDDED SHAPE SIGE FOR STRAINED CHANNEL TRANSISTORS
- Publication number 20170352741
- Publication date Dec 7, 2017
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL EMBEDDED SHAPE SIGE FOR STRAINED CHANNEL TRANSISTORS
- Publication number 20160099339
- Publication date Apr 7, 2016
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL EMBEDDED SHAPE SIGE FOR NFET CHANNEL STRAIN
- Publication number 20150001583
- Publication date Jan 1, 2015
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTLED EPITAXY IN SOURCE AND DRAIN REGIONS OF FETS
- Publication number 20140353741
- Publication date Dec 4, 2014
- Pietro Montanini
- H01 - BASIC ELECTRIC ELEMENTS

Pietro Montanini

Person

Patents Grantslast 30 patents

Wrap-around contact for nanosheet device

Hybrid complementary field effect transistor device

Vertical field-effect transistor late gate recess process with impr...

Nanosheet transistor device with bottom isolation

Robust low-k bottom spacer for VFET

Vertical transport FET with bottom source and drain extensions

Vertical field-effect transistor late gate recess process with impr...

Nanosheet transistor with fully isolated source and drain regions a...

Utilizing multilayer gate spacer to reduce erosion of semiconductor...

Sub-thermal switching slope vertical field effect transistor with d...

Sub-thermal switching slope vertical field effect transistor with d...

Removal of epitaxy defects in transistors

Dielectric isolation in gate-all-around devices

Sub-thermal switching slope vertical field effect transistor with d...

Sub-thermal switching slope vertical field effect transistor with d...

Dielectric isolation in gate-all-around devices

Method of forming integrated circuit with gate-all-around field eff...

Sub-thermal switching slope vertical field effect transistor with d...

Nanosheet devices with CMOS epitaxy and method of forming

Reducing bending in parallel structures in semiconductor fabrication

Utilizing multilayer gate spacer to reduce erosion of semiconductor...

Nanosheet devices with CMOS epitaxy and method of forming

Etch-resistant spacer formation on gate structure

Embedded shape sige for strained channel transistors

Methods of forming an isolated nano-sheet transistor device and the...

FinFET spacer formation on gate sidewalls, between the channel and...

Embedded shape sige for strained channel transistors

Devices and methods of forming epi for aggressive gate pitch

Embedded shape SiGe for strained channel transistors

Precision polysilicon resistors

Patents Applicationslast 30 patents

EXTENDED LOWER SOURCE/DRAIN FOR STACKED FIELD-EFFECT TRANSISTOR

NANOSHEET EPITAXY WITH FULL BOTTOM ISOLATION

WRAPAROUND CONTACT WITH REDUCED DISTANCE TO CHANNEL

WRAP-AROUND CONTACT FOR NANOSHEET DEVICE

HYBRID COMPLEMENTARY FIELD EFFECT TRANSISTOR DEVICE

NANOSHEET TRANSISTOR DEVICE WITH BOTTOM ISOLATION

Vertical Transport FET with Bottom Source and Drain Extensions

VERTICAL FIELD-EFFECT TRANSISTOR LATE GATE RECESS PROCESS WITH IMPR...

NANOSHEET TRANSISTOR DEVICE WITH BOTTOM ISOLATION

VERTICAL FIELD-EFFECT TRANSISTOR LATE GATE RECESS PROCESS WITH IMPR...

NANOSHEET TRANSISTOR WITH FULLY ISOLATED SOURCE AND DRAIN REGIONS A...

ROBUST LOW-K BOTTOM SPACER FOR VFET

SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...

SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...

DIELECTRIC ISOLATION IN GATE-ALL-AROUND DEVICES

SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...

SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...

SUB-THERMAL SWITCHING SLOPE VERTICAL FIELD EFFECT TRANSISTOR WITH D...

METHOD OF FORMING INTEGRATED CIRCUIT WITH GATE-ALL-AROUND FIELD EFF...

UTILIZING MULTILAYER GATE SPACER TO REDUCE EROSION OF SEMICONDUCTOR...

DIELECTRIC ISOLATION IN GATE-ALL-AROUND DEVICES

NANOSHEET TRANSISTOR WITH IMPROVED INNER SPACER

NANOSHEET DEVICES WITH CMOS EPITAXY AND METHOD OF FORMING

UTILIZING MULTILAYER GATE SPACER TO REDUCE EROSION OF SEMICONDUCTOR...

REDUCING BENDING IN PARALLEL STRUCTURES IN SEMICONDUCTOR FABRICATION

ETCH-RESISTANT SPACER FORMATION ON GATE STRUCTURE

NOVEL EMBEDDED SHAPE SIGE FOR STRAINED CHANNEL TRANSISTORS

NOVEL EMBEDDED SHAPE SIGE FOR STRAINED CHANNEL TRANSISTORS

NOVEL EMBEDDED SHAPE SIGE FOR NFET CHANNEL STRAIN

BOTTLED EPITAXY IN SOURCE AND DRAIN REGIONS OF FETS