Pin-Hsuan YEH

Person

Taipei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method
- Patent number 11,735,481
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Jyun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure passivating species drive-in method and structure fo...
- Patent number 11,710,638
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsiao-Kuan Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective hybrid capping layer for metal gates of transistors
- Patent number 11,532,509
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,081,396
- Issue date Aug 3, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Jyun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure passivating species drive-in method and structure fo...
- Patent number 11,024,505
- Issue date Jun 1, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsiao-Kuan Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure passivating species drive-in method and structure fo...
- Patent number 10,854,459
- Issue date Dec 1, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsiao-Kuan Wei
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE HYBRID CAPPING LAYER FOR METAL GATES OF TRANSISTORS
- Publication number 20240387257
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20230343648
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shao-Jyun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure Passivating Species Drive-In Method and Structure Fo...
- Publication number 20230317457
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsiao-Kuan Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Hybrid Capping Layer for Metal Gates of Transistors
- Publication number 20220367261
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20210358811
- Publication date Nov 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shao-Jyun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure Passivating Species Drive-In Method and Structure Fo...
- Publication number 20210287905
- Publication date Sep 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsiao-Kuan Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Hybrid Capping Layer for Metal Gates of Transistors
- Publication number 20210242081
- Publication date Aug 5, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20210082768
- Publication date Mar 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shao-Jyun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure Passivating Species Drive-In Method and Structure Fo...
- Publication number 20190096681
- Publication date Mar 28, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsiao-Kuan Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE PASSIVATING SPECIES DRIVE-IN METHOD AND STRUCTURE FO...
- Publication number 20190096680
- Publication date Mar 28, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsiao-Kuan WEI
- H01 - BASIC ELECTRIC ELEMENTS

Pin-Hsuan YEH

Person

Patents Grantslast 30 patents

Semiconductor device and method

Gate structure passivating species drive-in method and structure fo...

Selective hybrid capping layer for metal gates of transistors

Semiconductor device and method

Gate structure passivating species drive-in method and structure fo...

Gate structure passivating species drive-in method and structure fo...

Patents Applicationslast 30 patents

SELECTIVE HYBRID CAPPING LAYER FOR METAL GATES OF TRANSISTORS

Semiconductor Device and Method

Gate Structure Passivating Species Drive-In Method and Structure Fo...

Selective Hybrid Capping Layer for Metal Gates of Transistors

Semiconductor Device and Method

Gate Structure Passivating Species Drive-In Method and Structure Fo...

Selective Hybrid Capping Layer for Metal Gates of Transistors

Semiconductor Device and Method

Gate Structure Passivating Species Drive-In Method and Structure Fo...

GATE STRUCTURE PASSIVATING SPECIES DRIVE-IN METHOD AND STRUCTURE FO...