Ping Wu

Person

Berkeley Heights, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vanadium compensated, SI SiC single crystals of NU and PI type and...
- Patent number RE48378
- Issue date Jan 5, 2021
- II-VI DELAWARE, INC.
- Ilya Zwieback
Information Patent Grant
Large diameter, high quality SiC single crystals, method and apparatus
- Patent number RE46315
- Issue date Feb 21, 2017
- II-VI Incorporated
- Ilya Zwieback
Information Patent Grant
Method for synthesizing ultrahigh-purity silicon carbide
- Patent number 9,388,509
- Issue date Jul 12, 2016
- II-VI Incorporated
- Ilya Zwieback
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Vanadium compensated, SI SiC single crystals of NU and PI type and...
- Patent number 9,090,989
- Issue date Jul 28, 2015
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystals with reduced dislocation density grown by step-...
- Patent number 8,871,025
- Issue date Oct 28, 2014
- II-VI Incorporated
- Avinash Gupta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large diameter, high quality SiC single crystals, method and apparatus
- Patent number 8,741,413
- Issue date Jun 3, 2014
- II-VI Incorporated
- Ilya Zwieback
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Fabrication of SiC substrates with low warp and bow
- Patent number 8,449,671
- Issue date May 28, 2013
- II-VI Incorporated
- Ping Wu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device and method of fabrication
- Patent number 6,734,036
- Issue date May 11, 2004
- Agere Systems Inc.
- Utpal Kumar Chakrabarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices which utilize low K dielectrics
- Patent number 6,437,425
- Issue date Aug 20, 2002
- Agere Systems Guardian Corp.
- Utpal Kumar Chakrabarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Automated laser bar transfer apparatus and method
- Patent number 6,158,944
- Issue date Dec 12, 2000
- Lucent Technologies, Inc.
- John E. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tantalum-aluminum oxide coatings for semiconductor devices
- Patent number 5,802,091
- Issue date Sep 1, 1998
- Lucent Technologies Inc.
- Utpal Kumar Chakrabarti
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and...
- Publication number 20130320275
- Publication date Dec 5, 2013
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
"Method for Synthesizing Ultrahigh-Purity Silicon Carbide"
- Publication number 20130309496
- Publication date Nov 21, 2013
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
Large Diameter, High Quality SiC Single Crystals, Method and Apparatus
- Publication number 20130280466
- Publication date Oct 24, 2013
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION OF SIC SUBSTRATES WITH LOW WARP AND BOW
- Publication number 20100180814
- Publication date Jul 22, 2010
- II-VI Incorporated
- Ping Wu
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTALS WITH REDUCED DISLOCATION DENSITY GROWN BY STEP-...
- Publication number 20100031877
- Publication date Feb 11, 2010
- II-VI Incorporated
- Avinash Gupta
- C30 - CRYSTAL GROWTH
Information Patent Application
Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Cry...
- Publication number 20090053125
- Publication date Feb 26, 2009
- Il-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor device and method of fabrication
- Publication number 20030001241
- Publication date Jan 2, 2003
- Agere Systems Guardian Corp.
- Utpal Kumar Chakrabarti
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Vanadium compensated, SI SiC single crystals of NU and PI type and...

Large diameter, high quality SiC single crystals, method and apparatus

Method for synthesizing ultrahigh-purity silicon carbide

Vanadium compensated, SI SiC single crystals of NU and PI type and...

SiC single crystals with reduced dislocation density grown by step-...

Large diameter, high quality SiC single crystals, method and apparatus

Fabrication of SiC substrates with low warp and bow

Semiconductor device and method of fabrication

Semiconductor devices which utilize low K dielectrics

Automated laser bar transfer apparatus and method

Tantalum-aluminum oxide coatings for semiconductor devices

Patents Applicationslast 30 patents

Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and...

"Method for Synthesizing Ultrahigh-Purity Silicon Carbide"

Large Diameter, High Quality SiC Single Crystals, Method and Apparatus

FABRICATION OF SIC SUBSTRATES WITH LOW WARP AND BOW

SIC SINGLE CRYSTALS WITH REDUCED DISLOCATION DENSITY GROWN BY STEP-...

Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Cry...

Semiconductor device and method of fabrication