Pinghai HAO

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 12,166,119
- Issue date Dec 10, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 11,769,824
- Issue date Sep 26, 2023
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT wafer probe current collapse screening
- Patent number 11,067,620
- Issue date Jul 20, 2021
- Texas Instruments Incorporated
- Dong Seup Lee
- G01 - MEASURING TESTING
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 10,964,803
- Issue date Mar 30, 2021
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with multiple GaN-based alloy layers
- Patent number 10,861,943
- Issue date Dec 8, 2020
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage CMOS with triple gate oxide
- Patent number 10,714,474
- Issue date Jul 14, 2020
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed solid state apparatuses
- Patent number 10,312,095
- Issue date Jun 4, 2019
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed solid state apparatuses
- Patent number 10,134,596
- Issue date Nov 20, 2018
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-cost CMOS structure with dual gate dielectrics and method of fo...
- Patent number 9,865,507
- Issue date Jan 9, 2018
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single photomask high precision thin film resistor
- Patent number 9,842,895
- Issue date Dec 12, 2017
- Texas Instruments Incorporated
- PingHai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage CMOS with triple gate oxide
- Patent number 9,741,718
- Issue date Aug 22, 2017
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-cost CMOS structure with dual gate dielectrics and method of fo...
- Patent number 9,431,302
- Issue date Aug 30, 2016
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-cost CMOS structure with dual gate dielectrics and method of fo...
- Patent number 9,412,668
- Issue date Aug 9, 2016
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single photomask high precision thin film resistor
- Patent number 9,305,688
- Issue date Apr 5, 2016
- Texas Instruments Incorporated
- PingHai Hao
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Low cost transistors
- Patent number 9,184,163
- Issue date Nov 10, 2015
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage CMOS with triple gate oxide
- Patent number 9,117,687
- Issue date Aug 25, 2015
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cost transistors
- Patent number 9,117,691
- Issue date Aug 25, 2015
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
JFET having width defined by trench isolation
- Patent number 9,076,760
- Issue date Jul 7, 2015
- Texas Instruments Incorporated
- Binghua Hu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Low-cost CMOS structure with dual gate dielectrics and method of fo...
- Patent number 9,064,726
- Issue date Jun 23, 2015
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced area single poly EEPROM
- Patent number 8,946,805
- Issue date Feb 3, 2015
- Texas Instruments Incorporated
- Jozef C. Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DEMOS formed with a through gate implant
- Patent number 8,933,510
- Issue date Jan 13, 2015
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quasi-vertical gated NPN-PNP ESD protection device
- Patent number 8,878,283
- Issue date Nov 4, 2014
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor using diluted drain
- Patent number 8,530,296
- Issue date Sep 10, 2013
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor using diluted drain
- Patent number 8,399,924
- Issue date Mar 19, 2013
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implanted well breakdown in high voltage devices
- Patent number 8,134,212
- Issue date Mar 13, 2012
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low noise JFET
- Patent number 8,110,857
- Issue date Feb 7, 2012
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of high voltage JFET in linear bipolar CMOS process
- Patent number 7,989,853
- Issue date Aug 2, 2011
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quasi-vertical gated NPN-PNP ESD protection device
- Patent number 7,968,936
- Issue date Jun 28, 2011
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Area efficient 3D integration of low noise JFET and MOS in linear b...
- Patent number 7,939,863
- Issue date May 10, 2011
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetrical bi-directional semiconductor ESD protection device
- Patent number 7,786,507
- Issue date Aug 31, 2010
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES WITH SELECTIVELY DOPED GATE ELECTRODE STRUCTURE
- Publication number 20240363748
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dhanoop Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20230369482
- Publication date Nov 16, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20210159329
- Publication date May 27, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH MULTIPLE GAN-BASED ALLOY LAYERS
- Publication number 20200185499
- Publication date Jun 11, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20200161461
- Publication date May 21, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT WAFER PROBE CURRENT COLLAPSE SCREENING
- Publication number 20200064394
- Publication date Feb 27, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- G01 - MEASURING TESTING
Information Patent Application
RECESSED SOLID STATE APPARATUSES
- Publication number 20190157091
- Publication date May 23, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE CMOS WITH TRIPLE GATE OXIDE
- Publication number 20170301673
- Publication date Oct 19, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-COST CMOS STRUCTURE WITH DUAL GATE DIELECTRICS AND METHOD OF FO...
- Publication number 20160322263
- Publication date Nov 3, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE PHOTOMASK HIGH PRECISION THIN FILM RESISTOR
- Publication number 20160197135
- Publication date Jul 7, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Pinghai HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE CMOS WITH TRIPLE GATE OXIDE
- Publication number 20150325577
- Publication date Nov 12, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST TRANSISTORS
- Publication number 20150325578
- Publication date Nov 12, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Pinghai HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-COST CMOS STRUCTURE WITH DUAL GATE DIELECTRICS AND METHOD OF FO...
- Publication number 20150249040
- Publication date Sep 3, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-COST CMOS STRUCTURE WITH DUAL GATE DIELECTRICS AND METHOD OF FO...
- Publication number 20150249088
- Publication date Sep 3, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-Cost CMOS Structure with Dual Gate Dielectrics and Method of Fo...
- Publication number 20140252485
- Publication date Sep 11, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE PHOTOMASK HIGH PRECISION THIN FILM RESISTOR
- Publication number 20140184381
- Publication date Jul 3, 2014
- TEXAS INSTRUMENTS INCORPORATED
- PingHai HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST TRANSISTORS
- Publication number 20140183631
- Publication date Jul 3, 2014
- Pinghai HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DECMOS FORMED WITH A THROUGH GATE IMPLANT
- Publication number 20140183630
- Publication date Jul 3, 2014
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JFET HAVING WIDTH DEFINED BY TRENCH ISOLATION
- Publication number 20140062524
- Publication date Mar 6, 2014
- TEXAS INSTRUMENTS INCORPORATED
- BINGHUA HU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HIGH VOLTAGE TRANSISTOR USING DILUTED DRAIN
- Publication number 20130157429
- Publication date Jun 20, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE CMOS WITH TRIPLE GATE OXIDE
- Publication number 20130105909
- Publication date May 2, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUASI-VERTICAL GATED NPN-PNP ESD PROTECTION DEVICE
- Publication number 20120074458
- Publication date Mar 29, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Marie DENISON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRANSISTOR USING DILUTED DRAIN
- Publication number 20110309440
- Publication date Dec 22, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE SELF-ALIGNED LOW NOISE JFET
- Publication number 20100264466
- Publication date Oct 21, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Xiaoju Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYMMETRICAL BI-DIRECTIONAL SEMICONDUCTOR ESD PROTECTION DEVICE
- Publication number 20100171149
- Publication date Jul 8, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Marie DENISON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW NOISE JFET
- Publication number 20100155789
- Publication date Jun 24, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AREA EFFICIENT 3D INTEGRATION OF LOW NOISE JFET AND MOS IN LINEAR B...
- Publication number 20100032728
- Publication date Feb 11, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Pinghai HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Area Single Poly EEPROM
- Publication number 20100032744
- Publication date Feb 11, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Jozef C. Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF HIGH VOLTAGE JFET IN LINEAR BIPOLAR CMOS PROCESS
- Publication number 20100032729
- Publication date Feb 11, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Pinghai HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLANTED WELL BREAKDOWN IN HIGH VOLTAGE DEVICES
- Publication number 20100032769
- Publication date Feb 11, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS

Pinghai HAO

Person

Patents Grantslast 30 patents

Gallium nitride transistor with a doped region

Gallium nitride transistor with a doped region

HEMT wafer probe current collapse screening

Gallium nitride transistor with a doped region

Transistor with multiple GaN-based alloy layers

High voltage CMOS with triple gate oxide

Recessed solid state apparatuses

Recessed solid state apparatuses

Low-cost CMOS structure with dual gate dielectrics and method of fo...

Single photomask high precision thin film resistor

High voltage CMOS with triple gate oxide

Low-cost CMOS structure with dual gate dielectrics and method of fo...

Low-cost CMOS structure with dual gate dielectrics and method of fo...

Single photomask high precision thin film resistor

Low cost transistors

High voltage CMOS with triple gate oxide

Low cost transistors

JFET having width defined by trench isolation

Low-cost CMOS structure with dual gate dielectrics and method of fo...

Reduced area single poly EEPROM

DEMOS formed with a through gate implant

Quasi-vertical gated NPN-PNP ESD protection device

High voltage transistor using diluted drain

High voltage transistor using diluted drain

Implanted well breakdown in high voltage devices

Low noise JFET

Integration of high voltage JFET in linear bipolar CMOS process

Quasi-vertical gated NPN-PNP ESD protection device

Area efficient 3D integration of low noise JFET and MOS in linear b...

Symmetrical bi-directional semiconductor ESD protection device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES WITH SELECTIVELY DOPED GATE ELECTRODE STRUCTURE

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

TRANSISTOR WITH MULTIPLE GAN-BASED ALLOY LAYERS

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

HEMT WAFER PROBE CURRENT COLLAPSE SCREENING

RECESSED SOLID STATE APPARATUSES

HIGH VOLTAGE CMOS WITH TRIPLE GATE OXIDE

LOW-COST CMOS STRUCTURE WITH DUAL GATE DIELECTRICS AND METHOD OF FO...

SINGLE PHOTOMASK HIGH PRECISION THIN FILM RESISTOR

HIGH VOLTAGE CMOS WITH TRIPLE GATE OXIDE

LOW COST TRANSISTORS

LOW-COST CMOS STRUCTURE WITH DUAL GATE DIELECTRICS AND METHOD OF FO...

LOW-COST CMOS STRUCTURE WITH DUAL GATE DIELECTRICS AND METHOD OF FO...

Low-Cost CMOS Structure with Dual Gate Dielectrics and Method of Fo...

SINGLE PHOTOMASK HIGH PRECISION THIN FILM RESISTOR

LOW COST TRANSISTORS

DECMOS FORMED WITH A THROUGH GATE IMPLANT

JFET HAVING WIDTH DEFINED BY TRENCH ISOLATION

HIGH VOLTAGE TRANSISTOR USING DILUTED DRAIN

HIGH VOLTAGE CMOS WITH TRIPLE GATE OXIDE

QUASI-VERTICAL GATED NPN-PNP ESD PROTECTION DEVICE

HIGH VOLTAGE TRANSISTOR USING DILUTED DRAIN

GATE SELF-ALIGNED LOW NOISE JFET

SYMMETRICAL BI-DIRECTIONAL SEMICONDUCTOR ESD PROTECTION DEVICE

LOW NOISE JFET

AREA EFFICIENT 3D INTEGRATION OF LOW NOISE JFET AND MOS IN LINEAR B...

Reduced Area Single Poly EEPROM

INTEGRATION OF HIGH VOLTAGE JFET IN LINEAR BIPOLAR CMOS PROCESS

IMPLANTED WELL BREAKDOWN IN HIGH VOLTAGE DEVICES