Plamen Vassilev Kolev

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertically-aligned and conductive dummies in integrated circuit lay...
- Patent number 11,532,571
- Issue date Dec 20, 2022
- QUALCOMM Incorporated
- Plamen Vassilev Kolev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically-aligned and conductive dummies in integrated circuit lay...
- Patent number 11,133,272
- Issue date Sep 28, 2021
- QUALCOMM Incorporated
- Plamen Vassilev Kolev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically-aligned and conductive dummies in integrated circuit lay...
- Patent number 11,094,651
- Issue date Aug 17, 2021
- QUALCOMM Incorporated
- Plamen Vassilev Kolev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with gate extension to limit second gate effect
- Patent number 10,770,391
- Issue date Sep 8, 2020
- QUALCOMM Incorporated
- Plamen Vassilev Kolev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back silicided variable capacitor devices
- Patent number 10,608,124
- Issue date Mar 31, 2020
- QUALCOMM Incorporated
- Sinan Goktepeli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor and method of fabricating the same
- Patent number 10,600,894
- Issue date Mar 24, 2020
- QUALCOMM Incorporated
- Sinan Goktepeli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal-oxide-semiconductor (CMOS) voltage-controlled r...
- Patent number 10,326,028
- Issue date Jun 18, 2019
- QUALCOMM Incorporated
- Plamen Vassilev Kolev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Utilization of backside silicidation to form dual side contacted ca...
- Patent number 10,290,579
- Issue date May 14, 2019
- QUALCOMM Incorporated
- Sinan Goktepeli
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Utilization of backside silicidation to form dual side contacted ca...
- Patent number 9,847,293
- Issue date Dec 19, 2017
- QUALCOMM Incorporated
- Sinan Goktepeli
- H04 - ELECTRIC COMMUNICATION TECHNIQUE

Patents Applicationslast 30 patents

Information Patent Application
VERTICALLY-ALIGNED AND CONDUCTIVE DUMMIES IN INTEGRATED CIRCUIT LAY...
- Publication number 20210343661
- Publication date Nov 4, 2021
- QUALCOMM Incorporated
- Plamen Vassilev Kolev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR AND METHOD OF FABRICATING THE SAME
- Publication number 20200013884
- Publication date Jan 9, 2020
- QUALCOMM Incorporated
- Sinan GOKTEPELI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BODY CONNECTION FOR A SILICON-ON-INSULATOR DEVICE
- Publication number 20190326401
- Publication date Oct 24, 2019
- QUALCOMM Incorporated
- Plamen Vassilev KOLEV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK SILICIDED VARIABLE CAPACITOR DEVICES
- Publication number 20190326448
- Publication date Oct 24, 2019
- QUALCOMM Incorporated
- Sinan GOKTEPELI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR
- Publication number 20190304898
- Publication date Oct 3, 2019
- QUALCOMM Incorporated
- Plamen Vassilev KOLEV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) VOLTAGE-CONTROLLED R...
- Publication number 20190214506
- Publication date Jul 11, 2019
- QUALCOMM Incorporated
- Plamen Vassilev KOLEV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UTILIZATION OF BACKSIDE SILICIDATION TO FORM DUAL SIDE CONTACTED CA...
- Publication number 20180076137
- Publication date Mar 15, 2018
- QUALCOMM Incorporated
- Sinan GOKTEPELI
- H01 - BASIC ELECTRIC ELEMENTS

Plamen Vassilev Kolev

Person

Patents Grantslast 30 patents

Vertically-aligned and conductive dummies in integrated circuit lay...

Vertically-aligned and conductive dummies in integrated circuit lay...

Vertically-aligned and conductive dummies in integrated circuit lay...

Transistor with gate extension to limit second gate effect

Back silicided variable capacitor devices

Bipolar junction transistor and method of fabricating the same

Complementary metal-oxide-semiconductor (CMOS) voltage-controlled r...

Utilization of backside silicidation to form dual side contacted ca...

Utilization of backside silicidation to form dual side contacted ca...

Patents Applicationslast 30 patents

VERTICALLY-ALIGNED AND CONDUCTIVE DUMMIES IN INTEGRATED CIRCUIT LAY...

BIPOLAR JUNCTION TRANSISTOR AND METHOD OF FABRICATING THE SAME

BODY CONNECTION FOR A SILICON-ON-INSULATOR DEVICE

BACK SILICIDED VARIABLE CAPACITOR DEVICES

TRANSISTOR

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) VOLTAGE-CONTROLLED R...

UTILIZATION OF BACKSIDE SILICIDATION TO FORM DUAL SIDE CONTACTED CA...