Po-Kai Hsiao

Person

Changhua County, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing semiconductor device with semiconductor ca...
- Patent number 12,094,757
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Kai Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming isolation regions by depositing and oxidizing a...
- Patent number 11,996,317
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Kai Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,688,625
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Kai Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface trap charge density reduction
- Patent number 11,670,551
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Szu-Chi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor and method for fabricating the same
- Patent number 9,893,185
- Issue date Feb 13, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTERFACE TRAP CHARGE DENSITY REDUCTION
- Publication number 20240387274
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Szu-Chi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Depositing and Oxidizing Silicon Liner for Forming Isolation Regions
- Publication number 20240274465
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Kai Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming Same
- Publication number 20230378261
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsuan-Hsiao Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230326788
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fan-Cheng LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE TRAP CHARGE DENSITY REDUCTION
- Publication number 20230326802
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Szu-Chi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230274972
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Kai HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230068951
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Kai HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Depositing and Oxidizing Silicon Liner for Forming Isolation Regions
- Publication number 20220230908
- Publication date Jul 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Kai Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interface Trap Charge Density Reduction
- Publication number 20210098305
- Publication date Apr 1, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Szu-Chi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20170250282
- Publication date Aug 31, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS

Po-Kai Hsiao

Person

Patents Grantslast 30 patents

Method for manufacturing semiconductor device with semiconductor ca...

Methods for forming isolation regions by depositing and oxidizing a...

Method for manufacturing semiconductor device

Interface trap charge density reduction

Fin field effect transistor and method for fabricating the same

Patents Applicationslast 30 patents

INTERFACE TRAP CHARGE DENSITY REDUCTION

Depositing and Oxidizing Silicon Liner for Forming Isolation Regions

Semiconductor Device and Method of Forming Same

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

INTERFACE TRAP CHARGE DENSITY REDUCTION

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Depositing and Oxidizing Silicon Liner for Forming Isolation Regions

Interface Trap Charge Density Reduction

FIN FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME