Po-Kang Wang

Person

Los Altos, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 12,167,701
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 11,696,511
- Issue date Jul 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical testing apparatus for spintronics devices
- Patent number 11,573,270
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 11,569,441
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 11,309,489
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrical testing apparatus for spintronics devices
- Patent number 11,054,471
- Issue date Jul 6, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 10,797,232
- Issue date Oct 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 10,763,428
- Issue date Sep 1, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 10,658,577
- Issue date May 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 10,522,745
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully compensated synthetic ferromagnet for spintronics applications
- Patent number 10,522,747
- Issue date Dec 31, 2019
- TAIWAN SEMICONDUCTOR MANUFACUTING COMPANY, LTD.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrical testing apparatus for spintronics devices
- Patent number 10,509,074
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 10,431,736
- Issue date Oct 1, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully compensated synthetic ferromagnet for spintronics applications
- Patent number 10,230,044
- Issue date Mar 12, 2019
- Headway Technologies, Inc.
- Jian Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GMR biosensor with enhanced sensitivity
- Patent number 10,203,379
- Issue date Feb 12, 2019
- Headway Technologies, Inc.
- Po-Kang Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
MgO insertion into free layer for magnetic memory applications
- Patent number 10,193,062
- Issue date Jan 29, 2019
- Headway Technologies, Inc.
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive reference scheme for magnetic memory applications
- Patent number 10,102,896
- Issue date Oct 16, 2018
- Headway Technologies, Inc.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 10,014,465
- Issue date Jul 3, 2018
- Headway Technologies, Inc.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MgO insertion into free layer for magnetic memory applications
- Patent number 9,966,529
- Issue date May 8, 2018
- Headway Technologies, Inc.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 9,842,988
- Issue date Dec 12, 2017
- Headway Technologies, Inc.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Implementation of a one time programmable memory using a MRAM stack...
- Patent number 9,805,816
- Issue date Oct 31, 2017
- Headway Technologies, Inc.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilayer structure for reducing film roughness in magnetic devices
- Patent number 9,780,299
- Issue date Oct 3, 2017
- Headway Technologies, Inc.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive reference scheme for magnetic memory applications
- Patent number 9,747,965
- Issue date Aug 29, 2017
- Headway Technologies, Inc.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular magnetic recording (PMR) write shield design with min...
- Patent number 9,466,319
- Issue date Oct 11, 2016
- Headway Technologies, Inc.
- Yuhui Tang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
GMR biosensor with enhanced sensitivity
- Patent number 9,429,544
- Issue date Aug 30, 2016
- Headway Technologies, Inc.
- Po-Kang Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
PP3 shape designs for shield domain control to improve either skip...
- Patent number 9,361,923
- Issue date Jun 7, 2016
- Headway Technologies, Inc.
- Yue Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Read circuit for memory
- Patent number 9,355,700
- Issue date May 31, 2016
- International Business Machines Corporation
- Jonathan Z. Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM write pulses to dissipate intermediate state domains
- Patent number 9,343,132
- Issue date May 17, 2016
- Headway Technologies, Inc.
- Yuan-Jen Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Read circuit for memory
- Patent number 9,105,342
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Jonathan Z. Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Graded bevel tapered write pole design for field enhancement
- Patent number 9,070,383
- Issue date Jun 30, 2015
- Headway Technologies, Inc.
- Lijie Guan
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20220238798
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Electrical Testing Apparatus for Spintronics Devices
- Publication number 20210325460
- Publication date Oct 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...
- Publication number 20210020831
- Publication date Jan 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20200395534
- Publication date Dec 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20200279995
- Publication date Sep 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...
- Publication number 20200136025
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrical Testing Apparatus for Spintronics Devices
- Publication number 20200116790
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20200028073
- Publication date Jan 23, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrical Testing Apparatus for Spintronics Devices
- Publication number 20190257881
- Publication date Aug 22, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...
- Publication number 20190189910
- Publication date Jun 20, 2019
- Taiwan Semiconductor Manufacturing company Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully Compensated Synthetic Ferromagnet for Spintronics Applications
- Publication number 20190189911
- Publication date Jun 20, 2019
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and Circuits for Programming STT-MRAM Cells for Reducing Ba...
- Publication number 20180358071
- Publication date Dec 13, 2018
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20180323371
- Publication date Nov 8, 2018
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MgO Insertion into Free Layer for Magnetic Memory Applications
- Publication number 20180269387
- Publication date Sep 20, 2018
- HEADWAY TECHNOLOGIES, INC.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20180175287
- Publication date Jun 21, 2018
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully Compensated Synthetic Ferromagnet for Spintronics Applications
- Publication number 20180026179
- Publication date Jan 25, 2018
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
Adaptive Reference Scheme for Magnetic Memory Applications
- Publication number 20170352395
- Publication date Dec 7, 2017
- HEADWAY TECHNOLOGIES, INC.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
Adaptive Reference Scheme for Magnetic Memory Applications
- Publication number 20170186472
- Publication date Jun 29, 2017
- HEADWAY TECHNOLOGIES, INC.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
Laser Scanner Particle Counter and Imager
- Publication number 20170160187
- Publication date Jun 8, 2017
- TDK Corporation
- Celine Hu
- G01 - MEASURING TESTING
Information Patent Application
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
- Publication number 20170148977
- Publication date May 25, 2017
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20170025602
- Publication date Jan 26, 2017
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
GMR Biosensor with Enhanced Sensitivity
- Publication number 20160363635
- Publication date Dec 15, 2016
- HEADWAY TECHNOLOGIES, INC.
- Po-Kang Wang
- G01 - MEASURING TESTING
Information Patent Application
Implementation of a One Time Programmable Memory Using a MRAM Stack...
- Publication number 20160293268
- Publication date Oct 6, 2016
- HEADWAY TECHNOLOGIES, INC.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
READ CIRCUIT FOR MEMORY
- Publication number 20150138879
- Publication date May 21, 2015
- International Business Machines Corporation
- Jonathan Z. Sun
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM Write Pulses to Dissipate Intermediate State Domains
- Publication number 20140347918
- Publication date Nov 27, 2014
- HEADWAY TECHNOLOGIES, INC.
- Yuan-Jen Lee
- G11 - INFORMATION STORAGE
Information Patent Application
READ CIRCUIT FOR MEMORY
- Publication number 20140211550
- Publication date Jul 31, 2014
- HEADWAY TECHNOLOGIES, INC.
- Jonathan Z. Sun
- G11 - INFORMATION STORAGE
Information Patent Application
Graded Bevel Tapered Write Pole Design for Field Enhancement
- Publication number 20140111887
- Publication date Apr 24, 2014
- HEADWAY TECHNOLOGIES, INC.
- Lijie Guan
- G11 - INFORMATION STORAGE
Information Patent Application
Graded Bevel Tapered Write Pole Design for Field Enhancement
- Publication number 20140111886
- Publication date Apr 24, 2014
- HEADWAY TECHNOLOGIES, INC.
- Lijie Guan
- G11 - INFORMATION STORAGE
Information Patent Application
STT-MRAM Reference Layer Having Substantially Reduced Stray Field a...
- Publication number 20130240963
- Publication date Sep 19, 2013
- HEADWAY TECHNOLOGIES, INC.
- Robert Beach
- G11 - INFORMATION STORAGE
Information Patent Application
GMR Sensor Stripe for a Biosensor with Enhanced Sensitivity
- Publication number 20120169331
- Publication date Jul 5, 2012
- MAGIC TECHNOLOGIES, INC.
- Po-Kang Wang
- G01 - MEASURING TESTING

Po-Kang Wang

Person

Patents Grantslast 30 patents

Magnetic tunnel junction with low defect rate after high temperatur...

Low resistance MgO capping layer for perpendicularly magnetized mag...

Electrical testing apparatus for spintronics devices

Maintaining coercive field after high temperature anneal for magnet...

Magnetic tunnel junction with low defect rate after high temperatur...

Electrical testing apparatus for spintronics devices

Low resistance MgO capping layer for perpendicularly magnetized mag...

Magnetic tunnel junction with low defect rate after high temperatur...

Maintaining coercive field after high temperature anneal for magnet...

Low resistance MgO capping layer for perpendicularly magnetized mag...

Fully compensated synthetic ferromagnet for spintronics applications

Electrical testing apparatus for spintronics devices

Maintaining coercive field after high temperature anneal for magnet...

Fully compensated synthetic ferromagnet for spintronics applications

GMR biosensor with enhanced sensitivity

MgO insertion into free layer for magnetic memory applications

Adaptive reference scheme for magnetic memory applications

Maintaining coercive field after high temperature anneal for magnet...

MgO insertion into free layer for magnetic memory applications

Magnetic tunnel junction with low defect rate after high temperatur...

Implementation of a one time programmable memory using a MRAM stack...

Multilayer structure for reducing film roughness in magnetic devices

Adaptive reference scheme for magnetic memory applications

Perpendicular magnetic recording (PMR) write shield design with min...

GMR biosensor with enhanced sensitivity

PP3 shape designs for shield domain control to improve either skip...

Read circuit for memory

MRAM write pulses to dissipate intermediate state domains

Read circuit for memory

Graded bevel tapered write pole design for field enhancement

Patents Applicationslast 30 patents

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

Electrical Testing Apparatus for Spintronics Devices

Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

Maintaining Coercive Field after High Temperature Anneal for Magnet...

Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...

Electrical Testing Apparatus for Spintronics Devices

Maintaining Coercive Field after High Temperature Anneal for Magnet...

Electrical Testing Apparatus for Spintronics Devices

Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...

Fully Compensated Synthetic Ferromagnet for Spintronics Applications

Methods and Circuits for Programming STT-MRAM Cells for Reducing Ba...

Maintaining Coercive Field after High Temperature Anneal for Magnet...

MgO Insertion into Free Layer for Magnetic Memory Applications

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

Fully Compensated Synthetic Ferromagnet for Spintronics Applications

Adaptive Reference Scheme for Magnetic Memory Applications

Adaptive Reference Scheme for Magnetic Memory Applications

Laser Scanner Particle Counter and Imager

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

GMR Biosensor with Enhanced Sensitivity

Implementation of a One Time Programmable Memory Using a MRAM Stack...

READ CIRCUIT FOR MEMORY

MRAM Write Pulses to Dissipate Intermediate State Domains

READ CIRCUIT FOR MEMORY

Graded Bevel Tapered Write Pole Design for Field Enhancement

Graded Bevel Tapered Write Pole Design for Field Enhancement

STT-MRAM Reference Layer Having Substantially Reduced Stray Field a...

GMR Sensor Stripe for a Biosensor with Enhanced Sensitivity