POHAN KUNG

Person

TAINAN CITY, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Structure for metal gate electrode and method of fabrication
- Patent number 11,961,891
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for metal gate electrode and method of fabrication
- Patent number 11,282,934
- Issue date Mar 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing process thereof
- Patent number 11,271,103
- Issue date Mar 8, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Pohan Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating semiconductor devices with metal-gate work-f...
- Patent number 10,515,807
- Issue date Dec 24, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jui-Fen Chien
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NOVEL STRUCTURE FOR METAL GATE ELECTRODE AND METHOD OF FABRICATION
- Publication number 20230387230
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Structure for Metal Gate Electrode and Method of Fabrication
- Publication number 20220216317
- Publication date Jul 7, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Structure for Metal Gate Electrode and Method of Fabrication
- Publication number 20210028290
- Publication date Jan 28, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS THEREOF
- Publication number 20210005743
- Publication date Jan 7, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- POHAN KUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH METAL-GATE WORK-F...
- Publication number 20190385855
- Publication date Dec 19, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jui-Fen CHIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS THEREOF
- Publication number 20160276156
- Publication date Sep 22, 2016
- Taiwan Semiconductor Manufacturing company Ltd.
- POHAN KUNG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Structure for metal gate electrode and method of fabrication

Structure for metal gate electrode and method of fabrication

Semiconductor device and manufacturing process thereof

Methods of fabricating semiconductor devices with metal-gate work-f...

Patents Applicationslast 30 patents

NOVEL STRUCTURE FOR METAL GATE ELECTRODE AND METHOD OF FABRICATION

Novel Structure for Metal Gate Electrode and Method of Fabrication

Novel Structure for Metal Gate Electrode and Method of Fabrication

SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS THEREOF

METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH METAL-GATE WORK-F...

SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS THEREOF