Pon Sung Ku

Person

Gilbert, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Trench MOSFET shield poly contact
- Patent number 10,074,743
- Issue date Sep 11, 2018
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET shield poly contact
- Patent number 9,680,003
- Issue date Jun 13, 2017
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination for trench gate FET
- Patent number 9,553,184
- Issue date Jan 24, 2017
- NXP USA, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional trench FET with gate-based resurf
- Patent number 9,419,128
- Issue date Aug 16, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate FET with self-aligned source contact
- Patent number 9,397,213
- Issue date Jul 19, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate FET with self-aligned source contact
- Patent number 9,368,620
- Issue date Jun 14, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device termination structures and methods
- Patent number 9,362,394
- Issue date Jun 7, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Bidirectional MOSFET with suppressed bipolar snapback and method of...
- Patent number 9,324,800
- Issue date Apr 26, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Pon Sung Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET current sense structure and method
- Patent number 9,293,535
- Issue date Mar 22, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional trench FET with gate-based resurf
- Patent number 9,178,027
- Issue date Nov 3, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench FET with source recess etch
- Patent number 8,895,394
- Issue date Nov 25, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a vertical MOS transistor
- Patent number 8,143,126
- Issue date Mar 27, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Jingjing Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRENCH MOSFET SHIELD POLY CONTACT
- Publication number 20170288051
- Publication date Oct 5, 2017
- NXP USA, Inc.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET SHIELD POLY CONTACT
- Publication number 20160284838
- Publication date Sep 29, 2016
- FREESCALE SEMICONDUCTOR, INC.
- GANMING QIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE FET WITH SELF-ALIGNED SOURCE CONTACT
- Publication number 20160064556
- Publication date Mar 3, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION FOR TRENCH GATE FET
- Publication number 20160064546
- Publication date Mar 3, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL TRENCH FET WITH GATE-BASED RESURF
- Publication number 20160049508
- Publication date Feb 18, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE TERMINATION STRUCTURES AND METHODS
- Publication number 20150372130
- Publication date Dec 24, 2015
- Freescale Semiconductor Inc.
- Moaniss Zitouni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
POWER MOSFET CURRENT SENSE STRUCTURE AND METHOD
- Publication number 20140070313
- Publication date Mar 13, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench FET with Source Recess Etch
- Publication number 20130344667
- Publication date Dec 26, 2013
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A VERTICAL MOS TRANSISTOR
- Publication number 20110275187
- Publication date Nov 10, 2011
- Jingjing Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic assembly having magnetic tunnel junction voltage sensors...
- Publication number 20080112214
- Publication date May 15, 2008
- Young Sir Chung
- G11 - INFORMATION STORAGE

Pon Sung Ku

Person

Patents Grantslast 30 patents

Trench MOSFET shield poly contact

Trench MOSFET shield poly contact

Edge termination for trench gate FET

Bidirectional trench FET with gate-based resurf

Trench gate FET with self-aligned source contact

Trench gate FET with self-aligned source contact

Power device termination structures and methods

Bidirectional MOSFET with suppressed bipolar snapback and method of...

Power MOSFET current sense structure and method

Bidirectional trench FET with gate-based resurf

Trench FET with source recess etch

Method for forming a vertical MOS transistor

Patents Applicationslast 30 patents

TRENCH MOSFET SHIELD POLY CONTACT

TRENCH MOSFET SHIELD POLY CONTACT

TRENCH GATE FET WITH SELF-ALIGNED SOURCE CONTACT

EDGE TERMINATION FOR TRENCH GATE FET

BIDIRECTIONAL TRENCH FET WITH GATE-BASED RESURF

POWER DEVICE TERMINATION STRUCTURES AND METHODS

POWER MOSFET CURRENT SENSE STRUCTURE AND METHOD

Trench FET with Source Recess Etch

METHOD FOR FORMING A VERTICAL MOS TRANSISTOR

Electronic assembly having magnetic tunnel junction voltage sensors...