Porshia Shane Wrschka

Person

Danbury, CT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Structure and method of forming a notched gate field effect transistor
- Patent number 7,129,564
- Issue date Oct 31, 2006
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned selective hemispherical grain deposition process and s...
- Patent number 7,101,768
- Issue date Sep 5, 2006
- International Business Machines Corporation
- Kenneth T. Settlemyer, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a collar using selective SiGe/Amorphous Si Etch
- Patent number 6,987,042
- Issue date Jan 17, 2006
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of forming a notched gate field effect transistor
- Patent number 6,905,976
- Issue date Jun 14, 2005
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial collar method for improved deep trench processing
- Patent number 6,905,944
- Issue date Jun 14, 2005
- International Business Machines Corporation
- Michael Patrick Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of area enhancement in capacitor plates
- Patent number 6,709,947
- Issue date Mar 23, 2004
- International Business Machines Corporation
- Porshia S. Wrschka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Structure and method of forming a notched gate field effect transistor
- Publication number 20060157805
- Publication date Jul 20, 2006
- Infineon Technologies AG
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method of forming a notched gate field effect transistor
- Publication number 20050158927
- Publication date Jul 21, 2005
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A COLLAR USING SELECTIVE SiGe/AMORPHOUS Si ETCH
- Publication number 20040241939
- Publication date Dec 2, 2004
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF FORMING A NOTCHED GATE FIELD EFFECT TRANSISTOR
- Publication number 20040222498
- Publication date Nov 11, 2004
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL COLLAR METHOD FOR IMPROVED DEEP TRENCH PROCESSING
- Publication number 20040224478
- Publication date Nov 11, 2004
- International Business Machines Corporation
- Michael Patrick Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned selective hemispherical grain deposition process and s...
- Publication number 20040063297
- Publication date Apr 1, 2004
- International Business Machines Corporation
- Kenneth T. Settlemyer,
- H01 - BASIC ELECTRIC ELEMENTS

Porshia Shane Wrschka

Person

Patents Grantslast 30 patents

Structure and method of forming a notched gate field effect transistor

Self-aligned selective hemispherical grain deposition process and s...

Method of forming a collar using selective SiGe/Amorphous Si Etch

Structure and method of forming a notched gate field effect transistor

Sacrificial collar method for improved deep trench processing

Method of area enhancement in capacitor plates

Patents Applicationslast 30 patents

Structure and method of forming a notched gate field effect transistor

Structure and method of forming a notched gate field effect transistor

METHOD OF FORMING A COLLAR USING SELECTIVE SiGe/AMORPHOUS Si ETCH

STRUCTURE AND METHOD OF FORMING A NOTCHED GATE FIELD EFFECT TRANSISTOR

SACRIFICIAL COLLAR METHOD FOR IMPROVED DEEP TRENCH PROCESSING

Self-aligned selective hemispherical grain deposition process and s...