Pouya Hashemi

Person

White Plains, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate-all-around field-effect transistor having source side lateral...
- Patent number 12,136,671
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual spacer for double magnetic tunnel junction devices
- Patent number 12,063,867
- Issue date Aug 13, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit-torque magnetoresistive random-access memory array
- Patent number 12,020,736
- Issue date Jun 25, 2024
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Grant
Wide-base magnetic tunnel junction device with sidewall polymer spacer
- Patent number 11,980,039
- Issue date May 7, 2024
- International Business Machines Corporation
- Nathan P. Marchack
Information Patent Grant
Fabrication of nano-sheet transistors with different threshold volt...
- Patent number RE49954
- Issue date Apr 30, 2024
- TESSERA LLC
- Karthik Balakrishnan
Information Patent Grant
MRAM structure with enhanced magnetics using seed engineering
- Patent number 11,972,785
- Issue date Apr 30, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device with air gap
- Patent number 11,937,512
- Issue date Mar 19, 2024
- International Business Machines Corporation
- Chandrasekharan Kothandaraman
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit-torque magnetoresistive random-access memory with integr...
- Patent number 11,915,734
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical field effect transistor with dual threshold voltage
- Patent number 11,855,148
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-chip integration of a high-efficiency and a high-retention inver...
- Patent number 11,844,284
- Issue date Dec 12, 2023
- International Business Machines Corporation
- Pouya Hashemi
Information Patent Grant
Co-integrated channel and gate formation scheme for nanosheet trans...
- Patent number 11,830,877
- Issue date Nov 28, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transport field-effect transistors having germanium channe...
- Patent number 11,784,096
- Issue date Oct 10, 2023
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double magnetic tunnel junction device
- Patent number 11,778,921
- Issue date Oct 3, 2023
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of wrap-around-contact for gate-all-around nanosheet FET
- Patent number 11,756,996
- Issue date Sep 12, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with partial interface dipole formation for reduction...
- Patent number 11,742,425
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density ReRAM integration with interconnect
- Patent number 11,737,289
- Issue date Aug 22, 2023
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensionally stretchable single crystalline semiconductor me...
- Patent number 11,697,889
- Issue date Jul 11, 2023
- International Business Machines Corporation
- Alexander Reznicek
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Vertical transport field-effect transistor structure having increas...
- Patent number 11,646,362
- Issue date May 9, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive random-access memory device
- Patent number 11,569,438
- Issue date Jan 31, 2023
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of drain leakage in nanosheet device
- Patent number 11,563,082
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Pouya Hashemi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stacked resistive memory with individual switch control
- Patent number 11,527,574
- Issue date Dec 13, 2022
- International Business Machines Corporation
- Takashi Ando
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Tilted nanowire transistor
- Patent number 11,515,430
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor device having fin field eff...
- Patent number 11,515,217
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment by inner spacer material selection
- Patent number 11,515,214
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Full air-gap spacers for gate-all-around nanosheet field effect tra...
- Patent number 11,495,668
- Issue date Nov 8, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Full air-gap spacers for gate-all-around nanosheet field effect tra...
- Patent number 11,495,669
- Issue date Nov 8, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V lateral bipolar junction transistor on local facetted buried...
- Patent number 11,444,185
- Issue date Sep 13, 2022
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric threshold voltages in semiconductor devices
- Patent number 11,444,165
- Issue date Sep 13, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V lateral bipolar junction transistor on local facetted buried...
- Patent number 11,437,502
- Issue date Sep 6, 2022
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confined work function material for gate-all around transistor devices
- Patent number 11,430,660
- Issue date Aug 30, 2022
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GUIDING STRUCTURES FOR FABRICATION OF ANGLED FEATURES IN A SEMICOND...
- Publication number 20240319591
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Steven Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF ANGLED MANDREL STRUCTURES IN SEMICONDUCTOR DEVICE
- Publication number 20240319584
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL
- Publication number 20240112712
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE
- Publication number 20240107896
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET WITH THREE-TERMINAL SOT MRAM
- Publication number 20240105244
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM WITH DOPED SILICON-GERMANIUM-TIN ALLOY ELECTRODES
- Publication number 20240090339
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE WITH PARTIAL INTERFACE DIPOLE FORMATION FOR REDUCTION...
- Publication number 20230352590
- Publication date Nov 2, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD-EFFECT TRANSISTORS
- Publication number 20230268388
- Publication date Aug 24, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE WITH T-SHAPED DUAL INNER SPACER
- Publication number 20230187532
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DIPOLE LAYER MODULATION USING TWO-STEP INNER SPACER
- Publication number 20230178598
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION PILLAR FORMATION FOR MRAM DEVICE
- Publication number 20230180623
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED WIDE BASE DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20230165155
- Publication date May 25, 2023
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM STRUCTURE WITH ENHANCED MAGNETICS USING SEED ENGINEERING
- Publication number 20230154513
- Publication date May 18, 2023
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH DUAL THRESHOLD VOLTAGE
- Publication number 20230128314
- Publication date Apr 27, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING DEVICE HAVING A PROTECTIVE ELECTRODE RING
- Publication number 20230109660
- Publication date Apr 6, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USING DIFFERENT WORK-FUNCTIONS TO REDUCE GATE-INDUCED DRAIN LEAKAGE...
- Publication number 20230099254
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH INTEGR...
- Publication number 20230050152
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY ARRAY
- Publication number 20230049812
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Application
DUAL SPACER FOR DOUBLE MAGNETIC TUNNEL JUNCTION DEVICES
- Publication number 20230039834
- Publication date Feb 9, 2023
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
ON-CHIP INTEGRATION OF A HIGH-EFFICIENCY AND A HIGH-RETENTION INVER...
- Publication number 20220416156
- Publication date Dec 29, 2022
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE-BASE MAGNETIC TUNNEL JUNCTION DEVICE WITH SIDEWALL POLYMER SPACER
- Publication number 20220406841
- Publication date Dec 22, 2022
- International Business Machines Corporation
- NATHAN P. MARCHACK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE WITH AIR GAP
- Publication number 20220393102
- Publication date Dec 8, 2022
- International Business Machines Corporation
- Chandrasekharan KOTHANDARAMAN
- G11 - INFORMATION STORAGE
Information Patent Application
DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20220199898
- Publication date Jun 23, 2022
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY RERAM INTEGRATION WITH INTERCONNECT
- Publication number 20220181389
- Publication date Jun 9, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR WITH ASYMMETRIC THRESHOLD V...
- Publication number 20220123144
- Publication date Apr 21, 2022
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSPORT FIELD-EFFECT TRANSISTORS HAVING GERMANIUM CHANNE...
- Publication number 20220093473
- Publication date Mar 24, 2022
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR STRUCTURE HAVING INCREAS...
- Publication number 20210391444
- Publication date Dec 16, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE WORK FUNCTION NANOSHEET TRANSISTORS WITH INNER SPACER MODU...
- Publication number 20210328013
- Publication date Oct 21, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICE
- Publication number 20210296574
- Publication date Sep 23, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DUAL WORK FUNCTION METAL
- Publication number 20210296463
- Publication date Sep 23, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

Pouya Hashemi

Person

Patents Grantslast 30 patents

Gate-all-around field-effect transistor having source side lateral...

Dual spacer for double magnetic tunnel junction devices

Spin-orbit-torque magnetoresistive random-access memory array

Wide-base magnetic tunnel junction device with sidewall polymer spacer

Fabrication of nano-sheet transistors with different threshold volt...

MRAM structure with enhanced magnetics using seed engineering

Magnetic tunnel junction device with air gap

Spin-orbit-torque magnetoresistive random-access memory with integr...

Vertical field effect transistor with dual threshold voltage

On-chip integration of a high-efficiency and a high-retention inver...

Co-integrated channel and gate formation scheme for nanosheet trans...

Vertical transport field-effect transistors having germanium channe...

Double magnetic tunnel junction device

Formation of wrap-around-contact for gate-all-around nanosheet FET

FinFET device with partial interface dipole formation for reduction...

High density ReRAM integration with interconnect

Three-dimensionally stretchable single crystalline semiconductor me...

Vertical transport field-effect transistor structure having increas...

Magnetoresistive random-access memory device

Reduction of drain leakage in nanosheet device

Stacked resistive memory with individual switch control

Tilted nanowire transistor

Complementary metal oxide semiconductor device having fin field eff...

Threshold voltage adjustment by inner spacer material selection

Full air-gap spacers for gate-all-around nanosheet field effect tra...

Full air-gap spacers for gate-all-around nanosheet field effect tra...

III-V lateral bipolar junction transistor on local facetted buried...

Asymmetric threshold voltages in semiconductor devices

III-V lateral bipolar junction transistor on local facetted buried...

Confined work function material for gate-all around transistor devices

Patents Applicationslast 30 patents

GUIDING STRUCTURES FOR FABRICATION OF ANGLED FEATURES IN A SEMICOND...

FABRICATION OF ANGLED MANDREL STRUCTURES IN SEMICONDUCTOR DEVICE

SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL

MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE

STACKED FET WITH THREE-TERMINAL SOT MRAM

MRAM WITH DOPED SILICON-GERMANIUM-TIN ALLOY ELECTRODES

FINFET DEVICE WITH PARTIAL INTERFACE DIPOLE FORMATION FOR REDUCTION...

STACKED FIELD-EFFECT TRANSISTORS

NANOSHEET DEVICE WITH T-SHAPED DUAL INNER SPACER

SELECTIVE DIPOLE LAYER MODULATION USING TWO-STEP INNER SPACER

MAGNETIC TUNNEL JUNCTION PILLAR FORMATION FOR MRAM DEVICE

INVERTED WIDE BASE DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE

MRAM STRUCTURE WITH ENHANCED MAGNETICS USING SEED ENGINEERING

VERTICAL FIELD EFFECT TRANSISTOR WITH DUAL THRESHOLD VOLTAGE

RESISTIVE SWITCHING DEVICE HAVING A PROTECTIVE ELECTRODE RING

USING DIFFERENT WORK-FUNCTIONS TO REDUCE GATE-INDUCED DRAIN LEAKAGE...

SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH INTEGR...

SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY ARRAY

DUAL SPACER FOR DOUBLE MAGNETIC TUNNEL JUNCTION DEVICES

ON-CHIP INTEGRATION OF A HIGH-EFFICIENCY AND A HIGH-RETENTION INVER...

WIDE-BASE MAGNETIC TUNNEL JUNCTION DEVICE WITH SIDEWALL POLYMER SPACER

MAGNETIC TUNNEL JUNCTION DEVICE WITH AIR GAP

DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE

HIGH DENSITY RERAM INTEGRATION WITH INTERCONNECT

GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR WITH ASYMMETRIC THRESHOLD V...

VERTICAL TRANSPORT FIELD-EFFECT TRANSISTORS HAVING GERMANIUM CHANNE...

VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR STRUCTURE HAVING INCREAS...

MULTIPLE WORK FUNCTION NANOSHEET TRANSISTORS WITH INNER SPACER MODU...

MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICE

FINFET WITH DUAL WORK FUNCTION METAL