Prahalad K. Vasudev

Person

Thousand Oaks, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ultrathin submicron MOSFET with intrinsic channel
- Patent number 5,289,027
- Issue date Feb 22, 1994
- Hughes Aircraft Company
- Kyle W. Terrill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of silicon on insulator and gallium arsenide...
- Patent number 5,081,062
- Issue date Jan 14, 1992
- Prahalad Vasudev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating base lateral bipolar phototransistor with field effect gat...
- Patent number 5,027,177
- Issue date Jun 25, 1991
- Hughes Aircraft Company
- Prahalad K. Vasudev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-enhanced, self-aligned lateral bipolar transistor made of a sem...
- Patent number 4,965,872
- Issue date Oct 23, 1990
- Prahalad K. Vasudev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-sapphire liquid crystal light valve and method
- Patent number 4,826,300
- Issue date May 2, 1989
- Hughes Aircraft Company
- Uzi Efron
- G02 - OPTICS
Information Patent Grant
Low leakage CMOS/insulator substrate devices and method of forming...
- Patent number 4,816,893
- Issue date Mar 28, 1989
- Hughes Aircraft Company
- Donald C. Mayer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming low leakage CMOS device on insulating substrate
- Patent number 4,753,895
- Issue date Jun 28, 1988
- Hughes Aircraft Company
- Donald C. Mayer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Opposed dual-gate hybrid structure for three-dimensional integrated...
- Patent number 4,748,485
- Issue date May 31, 1988
- Hughes Aircraft Company
- Prahalad K. Vasudev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective area double epitaxial process for fabricating silicon-on-...
- Patent number 4,659,392
- Issue date Apr 21, 1987
- Hughes Aircraft Company
- Prahalad K. Vasudev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of making semiconductors having shallow, hyperabrupt doped...
- Patent number 4,617,066
- Issue date Oct 14, 1986
- Hughes Aircraft Company
- Prahalad K. Vasudev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid phase epitaxy and regrowth process with controlled defect den...
- Patent number 4,509,990
- Issue date Apr 9, 1985
- Hughes Aircraft Company
- Prahalad K. Vasudev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabrication of monolithic transistor coupled electrolum...
- Patent number 4,439,910
- Issue date Apr 3, 1984
- Hughes Aircraft Company
- Prahalad K. Vasudev
- G02 - OPTICS
Information Patent Grant
Monolithic transistor coupled electroluminescent diode
- Patent number 4,388,633
- Issue date Jun 14, 1983
- Hughes Aircraft Company
- Prahalad K. Vasudev
- H01 - BASIC ELECTRIC ELEMENTS

Prahalad K. Vasudev

Person

Patents Grantslast 30 patents

Ultrathin submicron MOSFET with intrinsic channel

Monolithic integration of silicon on insulator and gallium arsenide...

Floating base lateral bipolar phototransistor with field effect gat...

MOS-enhanced, self-aligned lateral bipolar transistor made of a sem...

Silicon-on-sapphire liquid crystal light valve and method

Low leakage CMOS/insulator substrate devices and method of forming...

Method of forming low leakage CMOS device on insulating substrate

Opposed dual-gate hybrid structure for three-dimensional integrated...

Selective area double epitaxial process for fabricating silicon-on-...

Process of making semiconductors having shallow, hyperabrupt doped...

Solid phase epitaxy and regrowth process with controlled defect den...

Process for fabrication of monolithic transistor coupled electrolum...

Monolithic transistor coupled electroluminescent diode