Prakash Chimanlal Dev

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of reducing erosion of a nitride gate cap layer during react...
- Patent number 6,960,523
- Issue date Nov 1, 2005
- Infineon Technolgies AG
- Michael Maldei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon-graded layer for improved adhesion of low-k dielectrics to s...
- Patent number 6,740,539
- Issue date May 25, 2004
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a damascene structure
- Patent number 6,649,531
- Issue date Nov 18, 2003
- International Business Machines Corporation
- William J. Cote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming inside nitride spacer for deep trench device DRA...
- Patent number 6,620,699
- Issue date Sep 16, 2003
- Infineon Technologies North America Corp.
- Arnd Scholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon-graded layer for improved adhesion of low-k dielectrics to s...
- Patent number 6,570,256
- Issue date May 27, 2003
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified vertical MOSFET and methods of formation thereof
- Patent number 6,541,810
- Issue date Apr 1, 2003
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method to improve bitline contact formation using a line mask
- Publication number 20050014332
- Publication date Jan 20, 2005
- Infineon Technologies North America Corp.
- Michael Maldei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of reducing erosion of a nitride gate cap layer during react...
- Publication number 20040195607
- Publication date Oct 7, 2004
- Infineon Technologies North America Corp.
- Michael Maldei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon-graded layer for improved adhesion of low-k dielectrics to s...
- Publication number 20030153198
- Publication date Aug 14, 2003
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for forming a damascene structure
- Publication number 20030100190
- Publication date May 29, 2003
- International Business Machines Corporation
- William J. Cote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming inside nitride spacer for deep trench device dra...
- Publication number 20030062557
- Publication date Apr 3, 2003
- Arnd Scholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon-graded layer for improved adhesion of low-k dielectrics to s...
- Publication number 20030017642
- Publication date Jan 23, 2003
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Modified vertical MOSFET and methods of formation thereof
- Publication number 20030001200
- Publication date Jan 2, 2003
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS

Prakash Chimanlal Dev

Person

Patents Grantslast 30 patents

Method of reducing erosion of a nitride gate cap layer during react...

Carbon-graded layer for improved adhesion of low-k dielectrics to s...

Process for forming a damascene structure

Method for forming inside nitride spacer for deep trench device DRA...

Carbon-graded layer for improved adhesion of low-k dielectrics to s...

Modified vertical MOSFET and methods of formation thereof

Patents Applicationslast 30 patents

Method to improve bitline contact formation using a line mask

Method of reducing erosion of a nitride gate cap layer during react...

Carbon-graded layer for improved adhesion of low-k dielectrics to s...

Process for forming a damascene structure

Method for forming inside nitride spacer for deep trench device dra...

Carbon-graded layer for improved adhesion of low-k dielectrics to s...

Modified vertical MOSFET and methods of formation thereof