Prasad Chaparala

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Configuration and fabrication of semiconductor structure using empt...
- Patent number 8,735,980
- Issue date May 27, 2014
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication of field-effect transistor having nitride...
- Patent number 8,673,720
- Issue date Mar 18, 2014
- National Semiconductor Corporation
- Prasad Chaparala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Configuration and fabrication of semiconductor structure using empt...
- Patent number 8,304,835
- Issue date Nov 6, 2012
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication of field-effect transistor having nitride...
- Patent number 8,253,208
- Issue date Aug 28, 2012
- National Semiconductor Corporation
- Prasad Chaparala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of field-effect transistor with vertical body-material...
- Patent number 8,129,262
- Issue date Mar 6, 2012
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of field-effect transistor with reduced junction capaci...
- Patent number 7,879,669
- Issue date Feb 1, 2011
- National Semiconductor Corporation
- Chih Sieh Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of complementary field-effect transistors with vertical...
- Patent number 7,785,971
- Issue date Aug 31, 2010
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of monitoring process misalignment to reduce asymmetric devi...
- Patent number 7,718,448
- Issue date May 18, 2010
- National Semiconductor Corporation
- Douglas Brisbin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication of field-effect transistor for alleviatin...
- Patent number 7,700,980
- Issue date Apr 20, 2010
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure in which like-polarity insulated-gate field...
- Patent number 7,701,005
- Issue date Apr 20, 2010
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor and method of forming the MOS transistor with a SiON...
- Patent number 7,645,657
- Issue date Jan 12, 2010
- National Semiconductor Corporation
- Douglas Brisbin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of like-polarity insulated-gate field-effect transistor...
- Patent number 7,595,244
- Issue date Sep 29, 2009
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for testing metal-insulator-metal capacitor structures under...
- Patent number 7,390,682
- Issue date Jun 24, 2008
- National Semiconductor Corporation
- Prasad Chaparala
- G01 - MEASURING TESTING
Information Patent Grant
Method and structure for testing metal-insulator-metal capacitor st...
- Patent number 7,170,090
- Issue date Jan 30, 2007
- National Semiconductor Corporation
- Prasad Chaparala
- G01 - MEASURING TESTING
Information Patent Grant
P-channel field-effect transistor with reduced junction capacitance
- Patent number 7,145,191
- Issue date Dec 5, 2006
- National Semiconductor Corporation
- Chih Sieh Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of programming an antifuse
- Patent number 6,927,474
- Issue date Aug 9, 2005
- National Semiconductor Corporation
- Denis Finbarr O'Connell
- G11 - INFORMATION STORAGE
Information Patent Grant
Direct implantation of fluorine into the channel region of a PMOS d...
- Patent number 6,797,555
- Issue date Sep 28, 2004
- National Semiconductor Corporation
- Peter J. Hopper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of p-channel field-effect transistor for reducing junct...
- Patent number 6,797,576
- Issue date Sep 28, 2004
- National Semiconductor Corporation
- Chih Sieh Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of field-effect transistor for alleviating short-channe...
- Patent number 6,599,804
- Issue date Jul 29, 2003
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor for alleviating short-channel effects
- Patent number 6,548,842
- Issue date Apr 15, 2003
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CONFIGURATION AND FABRICATION OF SEMICONDUCTOR STRUCTURE USING EMPT...
- Publication number 20130126970
- Publication date May 23, 2013
- NATIONAL SEMICONDUCTOR CORPORATION
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Fabrication of Field-effect Transistor for Alleviatin...
- Publication number 20120273880
- Publication date Nov 1, 2012
- National Semiconductor Corporation
- Chih Sieh Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Fabrication of Field-effect Transistor for Alleviatin...
- Publication number 20120181614
- Publication date Jul 19, 2012
- Chih Sieh Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Fabrication of Field-effect Transistor for Alleviatin...
- Publication number 20120181620
- Publication date Jul 19, 2012
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Configuration and fabrication of semiconductor structure using empt...
- Publication number 20100244128
- Publication date Sep 30, 2010
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and fabrication of field-effect transistor having nitride...
- Publication number 20100244148
- Publication date Sep 30, 2010
- National Semiconductor Corporation
- Prasad Chaparala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS transistor and method of forming the MOS transistor with a SiON...
- Publication number 20090146192
- Publication date Jun 11, 2009
- Douglas Brisbin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for testing metal-insulator-metal capacitor structures under...
- Publication number 20070051951
- Publication date Mar 8, 2007
- Prasad Chaparala
- G01 - MEASURING TESTING
Information Patent Application
Fabrication of field-effect transistor for alleviating short-channe...
- Publication number 20020074612
- Publication date Jun 20, 2002
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS

Prasad Chaparala

Person

Patents Grantslast 30 patents

Configuration and fabrication of semiconductor structure using empt...

Structure and fabrication of field-effect transistor having nitride...

Configuration and fabrication of semiconductor structure using empt...

Structure and fabrication of field-effect transistor having nitride...

Fabrication of field-effect transistor with vertical body-material...

Fabrication of field-effect transistor with reduced junction capaci...

Fabrication of complementary field-effect transistors with vertical...

Method of monitoring process misalignment to reduce asymmetric devi...

Structure and fabrication of field-effect transistor for alleviatin...

Semiconductor structure in which like-polarity insulated-gate field...

MOS transistor and method of forming the MOS transistor with a SiON...

Fabrication of like-polarity insulated-gate field-effect transistor...

Method for testing metal-insulator-metal capacitor structures under...

Method and structure for testing metal-insulator-metal capacitor st...

P-channel field-effect transistor with reduced junction capacitance

Method of programming an antifuse

Direct implantation of fluorine into the channel region of a PMOS d...

Fabrication of p-channel field-effect transistor for reducing junct...

Fabrication of field-effect transistor for alleviating short-channe...

Field-effect transistor for alleviating short-channel effects

Patents Applicationslast 30 patents

CONFIGURATION AND FABRICATION OF SEMICONDUCTOR STRUCTURE USING EMPT...

Structure and Fabrication of Field-effect Transistor for Alleviatin...

Structure and Fabrication of Field-effect Transistor for Alleviatin...

Structure and Fabrication of Field-effect Transistor for Alleviatin...

Configuration and fabrication of semiconductor structure using empt...

Structure and fabrication of field-effect transistor having nitride...

MOS transistor and method of forming the MOS transistor with a SiON...

Method for testing metal-insulator-metal capacitor structures under...

Fabrication of field-effect transistor for alleviating short-channe...