Pratyush P. Buragohain

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Hillsboro, OR, US

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Patents Applicationslast 30 patents

Information Patent Application
TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS
- Publication number 20250006841
- Publication date Jan 2, 2025
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES
- Publication number 20250006840
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...
- Publication number 20250006791
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...
- Publication number 20250006839
- Publication date Jan 2, 2025
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY E...
- Publication number 20240429301
- Publication date Dec 26, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS