Puneet KHANNA

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor device structures with retrograde wells in CMOS applicat...
- Patent number 10,483,172
- Issue date Nov 19, 2019
- GLOBALFOUNDRIES Inc.
- Vara G. Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming transistors with retrograde wells in CMOS applic...
- Patent number 9,852,954
- Issue date Dec 26, 2017
- GLOBALFOUNDRIES Inc.
- Vara G. Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Blanket EPI super steep retrograde well formation without Si recess
- Patent number 9,362,357
- Issue date Jun 7, 2016
- GLOBALFOUNDRIES Inc.
- Laegu Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET spacer etch for eSiGe improvement
- Patent number 9,356,147
- Issue date May 31, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming transistors with retrograde wells in CMOS applic...
- Patent number 9,209,181
- Issue date Dec 8, 2015
- GLOBALFOUNDRIES Inc.
- Vara G. Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Blanket EPI super steep retrograde well formation without Si recess
- Patent number 9,099,525
- Issue date Aug 4, 2015
- GLOBALFOUNDRIES Inc.
- Laegu Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming step doping channel profile for super steep retro...
- Patent number 9,099,380
- Issue date Aug 4, 2015
- GLOBALFOUNDRIES Inc.
- Vara Govindeswara Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type transistor structures with extended embedded stress elemen...
- Patent number 9,024,368
- Issue date May 5, 2015
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removal of nitride bump in opening replacement gate structure
- Patent number 8,927,356
- Issue date Jan 6, 2015
- GLOBALFOUNDRIES Inc.
- Tsung-Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming step doping channel profile for super steep retro...
- Patent number 8,916,442
- Issue date Dec 23, 2014
- GLOBALFOUNDRIES Inc.
- Vara Govindeswara Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR DEVICE STRUCTURES WITH RETROGRADE WELLS IN CMOS APPLICAT...
- Publication number 20180047641
- Publication date Feb 15, 2018
- GLOBALFOUNDRIES INC.
- Vara G. Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING TRANSISTORS WITH RETROGRADE WELLS IN CMOS APPLIC...
- Publication number 20160035630
- Publication date Feb 4, 2016
- GLOBALFOUNDRIES INC.
- Vara G. Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BLANKET EPI SUPER STEEP RETROGRADE WELL FORMATION WITHOUT Si RECESS
- Publication number 20150249129
- Publication date Sep 3, 2015
- GLOBALFOUNDRIES INC.
- Laegu KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE TRANSISTOR STRUCTURES WITH EXTENDED EMBEDDED STRESS ELEMEN...
- Publication number 20150129983
- Publication date May 14, 2015
- GLOBALFOUNDRIES Inc.
- Hong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ISOLATION REGION UNIFORMITY
- Publication number 20150087134
- Publication date Mar 26, 2015
- GLOBALFOUNDRIES INC.
- Tsung-Liang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STEP DOPING CHANNEL PROFILE FOR SUPER STEEP RETRO...
- Publication number 20150053981
- Publication date Feb 26, 2015
- GLOBALFOUNDRIES INC.
- Vara Govindeswara Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING TRANSISTORS WITH RETROGRADE WELLS IN CMOS APPLIC...
- Publication number 20140367787
- Publication date Dec 18, 2014
- Vara G. Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REMOVAL OF NITRIDE BUMP IN OPENING REPLACEMENT GATE STRUCTURE
- Publication number 20140370697
- Publication date Dec 18, 2014
- Tsung-Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SPACER ETCH FOR eSiGe IMPROVEMENT
- Publication number 20140367751
- Publication date Dec 18, 2014
- Hong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STEP DOPING CHANNEL PROFILE FOR SUPER STEEP RETRO...
- Publication number 20140197411
- Publication date Jul 17, 2014
- GLOBAL FOUNDERIES INC.
- Vara Govindeswara Reddy VAKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BLANKET EPI SUPER STEEP RETROGRADE WELL FORMATION WITHOUT Si RECESS
- Publication number 20140183551
- Publication date Jul 3, 2014
- GLOBALFOUNDRIES INC.
- Laegu Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE FORMATION PROCESSES
- Publication number 20140179093
- Publication date Jun 26, 2014
- GLOBALFOUNDRIES, Inc.
- Dae-Han CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF TAILORING SILICON TRENCH PROFILE FOR SUPER STEEP RETROGRA...
- Publication number 20140070358
- Publication date Mar 13, 2014
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS USING TAILORED CHAMFERE...
- Publication number 20130224944
- Publication date Aug 29, 2013
- GLOBALFOUNDRIES INC.
- Puneet Khanna
- H01 - BASIC ELECTRIC ELEMENTS

Puneet KHANNA

Person

Patents Grantslast 30 patents

Transistor device structures with retrograde wells in CMOS applicat...

Methods of forming transistors with retrograde wells in CMOS applic...

Blanket EPI super steep retrograde well formation without Si recess

FinFET spacer etch for eSiGe improvement

Methods of forming transistors with retrograde wells in CMOS applic...

Blanket EPI super steep retrograde well formation without Si recess

Method of forming step doping channel profile for super steep retro...

Fin-type transistor structures with extended embedded stress elemen...

Removal of nitride bump in opening replacement gate structure

Method of forming step doping channel profile for super steep retro...

Patents Applicationslast 30 patents

TRANSISTOR DEVICE STRUCTURES WITH RETROGRADE WELLS IN CMOS APPLICAT...

METHODS OF FORMING TRANSISTORS WITH RETROGRADE WELLS IN CMOS APPLIC...

BLANKET EPI SUPER STEEP RETROGRADE WELL FORMATION WITHOUT Si RECESS

FIN-TYPE TRANSISTOR STRUCTURES WITH EXTENDED EMBEDDED STRESS ELEMEN...

SEMICONDUCTOR ISOLATION REGION UNIFORMITY

METHOD OF FORMING STEP DOPING CHANNEL PROFILE FOR SUPER STEEP RETRO...

METHODS OF FORMING TRANSISTORS WITH RETROGRADE WELLS IN CMOS APPLIC...

REMOVAL OF NITRIDE BUMP IN OPENING REPLACEMENT GATE STRUCTURE

FINFET SPACER ETCH FOR eSiGe IMPROVEMENT

METHOD OF FORMING STEP DOPING CHANNEL PROFILE FOR SUPER STEEP RETRO...

BLANKET EPI SUPER STEEP RETROGRADE WELL FORMATION WITHOUT Si RECESS

GATE STRUCTURE FORMATION PROCESSES

METHOD OF TAILORING SILICON TRENCH PROFILE FOR SUPER STEEP RETROGRA...

METHODS FOR FABRICATING INTEGRATED CIRCUITS USING TAILORED CHAMFERE...