Puo-Yu Chiang

Person

Suao, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Strained transistor with conductive plate
- Patent number 12,166,108
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chan-Yu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage devices, systems, and methods for forming the high vol...
- Patent number 8,507,988
- Issue date Aug 13, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wen Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET with high breakdown voltage and low on-resistance
- Patent number 8,389,341
- Issue date Mar 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrodes of HVMOS devices having non-uniform doping concentr...
- Patent number 8,158,475
- Issue date Apr 17, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ru-Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device having reduced on-state resistance
- Patent number 8,159,029
- Issue date Apr 17, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ru-Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET with high breakdown voltage and low on-resistance
- Patent number 8,129,783
- Issue date Mar 6, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET with high breakdown voltage and low on-resistance
- Patent number 7,989,890
- Issue date Aug 2, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Disconnected DPW structures for improving on-state performance of M...
- Patent number 7,928,508
- Issue date Apr 19, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wen (Albert) Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET with high breakdown voltage and low on-resistance
- Patent number 7,915,677
- Issue date Mar 29, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Yi Huang
Information Patent Grant
Gate electrodes of HVMOS devices having non-uniform doping concentr...
- Patent number 7,816,744
- Issue date Oct 19, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ru-Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode structures having deep wells for improving breakdown...
- Patent number 7,781,859
- Issue date Aug 24, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Puo-Yu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stabilizing breakdown voltages by forming tunnels for ultra-high vo...
- Patent number 7,768,071
- Issue date Aug 3, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Eric Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device with low on-resistance
- Patent number 7,508,032
- Issue date Mar 24, 2009
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Puo-Yu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET with high breakdown voltage and low on-resistance
- Patent number 7,476,591
- Issue date Jan 13, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Strained Transistor with Conductive Plate
- Publication number 20230378324
- Publication date Nov 23, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chan-Yu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance
- Publication number 20120003803
- Publication date Jan 5, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cost Effective Global Isolation and Power Dissipation For Power Int...
- Publication number 20110260245
- Publication date Oct 27, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ruey-Hsin LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICES, SYSTEMS, AND METHODS FOR FORMING THE HIGH VOL...
- Publication number 20110079846
- Publication date Apr 7, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wen YAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Electrodes of HVMOS Devices Having Non-Uniform Doping Concentr...
- Publication number 20110008944
- Publication date Jan 13, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ru-Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stabilizing Breakdown Voltages by Forming Tunnels for Ultra-High Vo...
- Publication number 20100006933
- Publication date Jan 14, 2010
- Eric Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Electrodes of HVMOS Devices Having Non-Uniform Doping Concentr...
- Publication number 20100006934
- Publication date Jan 14, 2010
- Ru-Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Disconnected DPW Structures for Improving On-State Performance of M...
- Publication number 20090256200
- Publication date Oct 15, 2009
- Chih-Wen (Albert) Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky Diode Structures Having Deep Wells for Improving Breakdown...
- Publication number 20090236679
- Publication date Sep 24, 2009
- Puo-Yu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance
- Publication number 20090085101
- Publication date Apr 2, 2009
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance
- Publication number 20090001462
- Publication date Jan 1, 2009
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE WITH LOW ON-RESISTANCE
- Publication number 20080197410
- Publication date Aug 21, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Puo-Yu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral power MOSFET with high breakdown voltage and low on-resistance
- Publication number 20080090347
- Publication date Apr 17, 2008
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS

Puo-Yu Chiang

Person

Patents Grantslast 30 patents

Strained transistor with conductive plate

High voltage devices, systems, and methods for forming the high vol...

Lateral power MOSFET with high breakdown voltage and low on-resistance

Gate electrodes of HVMOS devices having non-uniform doping concentr...

High voltage device having reduced on-state resistance

Lateral power MOSFET with high breakdown voltage and low on-resistance

Lateral power MOSFET with high breakdown voltage and low on-resistance

Disconnected DPW structures for improving on-state performance of M...

Lateral power MOSFET with high breakdown voltage and low on-resistance

Gate electrodes of HVMOS devices having non-uniform doping concentr...

Schottky diode structures having deep wells for improving breakdown...

Stabilizing breakdown voltages by forming tunnels for ultra-high vo...

High voltage device with low on-resistance

Lateral power MOSFET with high breakdown voltage and low on-resistance

Patents Applicationslast 30 patents

Strained Transistor with Conductive Plate

Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance

Cost Effective Global Isolation and Power Dissipation For Power Int...

HIGH VOLTAGE DEVICES, SYSTEMS, AND METHODS FOR FORMING THE HIGH VOL...

Gate Electrodes of HVMOS Devices Having Non-Uniform Doping Concentr...

Stabilizing Breakdown Voltages by Forming Tunnels for Ultra-High Vo...

Gate Electrodes of HVMOS Devices Having Non-Uniform Doping Concentr...

Disconnected DPW Structures for Improving On-State Performance of M...

Schottky Diode Structures Having Deep Wells for Improving Breakdown...

Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance

Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance

HIGH VOLTAGE DEVICE WITH LOW ON-RESISTANCE

Lateral power MOSFET with high breakdown voltage and low on-resistance