Puo-Yu Chiang

Person

Suao, TW

People

Patents Grantslast 30 patents

Information Patent Grant
High voltage devices, systems, and methods for forming the high vol...
- Patent number 8,507,988
- Issue date Aug 13, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wen Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET with high breakdown voltage and low on-resistance
- Patent number 8,389,341
- Issue date Mar 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrodes of HVMOS devices having non-uniform doping concentr...
- Patent number 8,158,475
- Issue date Apr 17, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ru-Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device having reduced on-state resistance
- Patent number 8,159,029
- Issue date Apr 17, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ru-Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET with high breakdown voltage and low on-resistance
- Patent number 8,129,783
- Issue date Mar 6, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET with high breakdown voltage and low on-resistance
- Patent number 7,989,890
- Issue date Aug 2, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Disconnected DPW structures for improving on-state performance of M...
- Patent number 7,928,508
- Issue date Apr 19, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wen (Albert) Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET with high breakdown voltage and low on-resistance
- Patent number 7,915,677
- Issue date Mar 29, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Yi Huang
Information Patent Grant
Gate electrodes of HVMOS devices having non-uniform doping concentr...
- Patent number 7,816,744
- Issue date Oct 19, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ru-Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode structures having deep wells for improving breakdown...
- Patent number 7,781,859
- Issue date Aug 24, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Puo-Yu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stabilizing breakdown voltages by forming tunnels for ultra-high vo...
- Patent number 7,768,071
- Issue date Aug 3, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Eric Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device with low on-resistance
- Patent number 7,508,032
- Issue date Mar 24, 2009
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Puo-Yu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET with high breakdown voltage and low on-resistance
- Patent number 7,476,591
- Issue date Jan 13, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Strained Transistor with Conductive Plate
- Publication number 20230378324
- Publication date Nov 23, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chan-Yu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance
- Publication number 20120003803
- Publication date Jan 5, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cost Effective Global Isolation and Power Dissipation For Power Int...
- Publication number 20110260245
- Publication date Oct 27, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ruey-Hsin LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICES, SYSTEMS, AND METHODS FOR FORMING THE HIGH VOL...
- Publication number 20110079846
- Publication date Apr 7, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wen YAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Electrodes of HVMOS Devices Having Non-Uniform Doping Concentr...
- Publication number 20110008944
- Publication date Jan 13, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ru-Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stabilizing Breakdown Voltages by Forming Tunnels for Ultra-High Vo...
- Publication number 20100006933
- Publication date Jan 14, 2010
- Eric Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Electrodes of HVMOS Devices Having Non-Uniform Doping Concentr...
- Publication number 20100006934
- Publication date Jan 14, 2010
- Ru-Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Disconnected DPW Structures for Improving On-State Performance of M...
- Publication number 20090256200
- Publication date Oct 15, 2009
- Chih-Wen (Albert) Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky Diode Structures Having Deep Wells for Improving Breakdown...
- Publication number 20090236679
- Publication date Sep 24, 2009
- Puo-Yu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance
- Publication number 20090085101
- Publication date Apr 2, 2009
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance
- Publication number 20090001462
- Publication date Jan 1, 2009
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE WITH LOW ON-RESISTANCE
- Publication number 20080197410
- Publication date Aug 21, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Puo-Yu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral power MOSFET with high breakdown voltage and low on-resistance
- Publication number 20080090347
- Publication date Apr 17, 2008
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS

Puo-Yu Chiang

Person

Patents Grantslast 30 patents

High voltage devices, systems, and methods for forming the high vol...

Lateral power MOSFET with high breakdown voltage and low on-resistance

Gate electrodes of HVMOS devices having non-uniform doping concentr...

High voltage device having reduced on-state resistance

Lateral power MOSFET with high breakdown voltage and low on-resistance

Lateral power MOSFET with high breakdown voltage and low on-resistance

Disconnected DPW structures for improving on-state performance of M...

Lateral power MOSFET with high breakdown voltage and low on-resistance

Gate electrodes of HVMOS devices having non-uniform doping concentr...

Schottky diode structures having deep wells for improving breakdown...

Stabilizing breakdown voltages by forming tunnels for ultra-high vo...

High voltage device with low on-resistance

Lateral power MOSFET with high breakdown voltage and low on-resistance

Patents Applicationslast 30 patents

Strained Transistor with Conductive Plate

Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance

Cost Effective Global Isolation and Power Dissipation For Power Int...

HIGH VOLTAGE DEVICES, SYSTEMS, AND METHODS FOR FORMING THE HIGH VOL...

Gate Electrodes of HVMOS Devices Having Non-Uniform Doping Concentr...

Stabilizing Breakdown Voltages by Forming Tunnels for Ultra-High Vo...

Gate Electrodes of HVMOS Devices Having Non-Uniform Doping Concentr...

Disconnected DPW Structures for Improving On-State Performance of M...

Schottky Diode Structures Having Deep Wells for Improving Breakdown...

Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance

Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance

HIGH VOLTAGE DEVICE WITH LOW ON-RESISTANCE

Lateral power MOSFET with high breakdown voltage and low on-resistance