Pushpa Mahalingam

Person

Richardson, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Laterally diffused metal-oxide semiconductor (LDMOS) transistor wit...
- Patent number 12,243,939
- Issue date Mar 4, 2025
- Texas Instruments Incorporated
- Gang Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cost, high performance analog metal oxide semiconductor transistor
- Patent number 12,136,625
- Issue date Nov 5, 2024
- Texas Instruments Incorporated
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon and/or oxygen doped polysilicon resistor
- Patent number 12,027,515
- Issue date Jul 2, 2024
- Texas Instruments Incorporated
- Yanbiao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide fabrication and system
- Patent number 11,972,942
- Issue date Apr 30, 2024
- Texas Instruments Incorporated
- Mona M. Eissa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon resistor using reduced grain size polysilicon
- Patent number 11,817,454
- Issue date Nov 14, 2023
- Texas Instruments Incorporated
- Yanbiao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC having trench-based metal-insulator-metal capacitor
- Patent number 11,616,011
- Issue date Mar 28, 2023
- Texas Instruments Incorporated
- Mona M. Eissa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with high-k drain STI dielectric
- Patent number 11,081,558
- Issue date Aug 3, 2021
- Texas Instruments Incorporated
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC having trench-based metal-insulator-metal capacitor
- Patent number 11,075,157
- Issue date Jul 27, 2021
- Texas Instruments Incorporated
- Mona M. Eissa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon gate formation in CMOS transistors
- Patent number 10,651,039
- Issue date May 12, 2020
- Texas Instruments Incorporated
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with high-k drain STI dielectric
- Patent number 10,593,773
- Issue date Mar 17, 2020
- Texas Instruments Incorporated
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming integrated circuit devices with metal-insulator-metal capac...
- Patent number 8,110,414
- Issue date Feb 7, 2012
- Texas Instruments Incorporated
- Marshall O. Cathey, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an integrated circuit thin film resistor
- Patent number 6,872,655
- Issue date Mar 29, 2005
- Texas Instruments Incorporated
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED DEEP TRENCH HIGH-K CAPACITOR AND METHOD
- Publication number 20250221015
- Publication date Jul 3, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Yanbiao Pan
Information Patent Application
LATERALLY DIFFUSED METAL-OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR WIT...
- Publication number 20250185283
- Publication date Jun 5, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Gang Xue
Information Patent Application
SEMICONDUCTOR DEVICE WITH A HIGH K FIELD RELIEF DIELECTRIC STRUCTURE
- Publication number 20250040179
- Publication date Jan 30, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST, HIGH PERFORMANCE ANALOG METAL OXIDE SEMICONDUCTOR TRANSISTOR
- Publication number 20250031445
- Publication date Jan 23, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH NITROGEN DOPED FIELD RELIEF DIELECTRIC LAYER
- Publication number 20250006836
- Publication date Jan 2, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Jackson Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon and/or Oxygen Doped Polysilicon Resistor
- Publication number 20240312984
- Publication date Sep 19, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Yanbiao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SMALL GRAIN SIZE POLYSILICON ENGINEERING FOR THRESHOLD VOLTAGE MISM...
- Publication number 20230245891
- Publication date Aug 3, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of annealing out silicon defectivity
- Publication number 20230215737
- Publication date Jul 6, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Abbas Ali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFUSED METAL-OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR WITH...
- Publication number 20230136827
- Publication date May 4, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Gang Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST, HIGH PERFORMANCE ANALOG METAL OXIDE SEMICONDUCTOR TRANSISTOR
- Publication number 20230134131
- Publication date May 4, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon and/or Oxygen Doped Polysilicon Resistor
- Publication number 20230112644
- Publication date Apr 13, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Yanbiao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE OXIDE FABRICATION AND SYSTEM
- Publication number 20230087463
- Publication date Mar 23, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Mona M. Eissa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON RESISTORS WITH HIGH SHEET RESISTANCE
- Publication number 20220399434
- Publication date Dec 15, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Yanbiao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON RESISTOR USING REDUCED GRAIN SIZE POLYSILICON
- Publication number 20220238516
- Publication date Jul 28, 2022
- Yanbiao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BCD IC WITH GATE ETCH AND SELF-ALIGNED IMPLANT INTEGRATION
- Publication number 20220068649
- Publication date Mar 3, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Mona M. Eissa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC HAVING TRENCH-BASED METAL-INSULATOR-METAL CAPACITOR
- Publication number 20210327802
- Publication date Oct 21, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Mona M. Eissa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC HAVING TRENCH-BASED METAL-INSULATOR-METAL CAPACITOR
- Publication number 20210074630
- Publication date Mar 11, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Mona M. Eissa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH HIGH-K DRAIN STI DIELECTRIC
- Publication number 20200212188
- Publication date Jul 2, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON GATE FORMATION IN CMOS TRANSISTORS
- Publication number 20190206689
- Publication date Jul 4, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Pushpa MAHALINGAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH HIGH-K DRAIN STI DIELECTRIC
- Publication number 20190103471
- Publication date Apr 4, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE PLASMA ETCH OF TOP ELECTRODES FOR METAL-INSULATOR-METAL (...
- Publication number 20100276783
- Publication date Nov 4, 2010
- Texas Instruments Inc.
- MARSHALL O. CATHEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ON-CHIP ISOLATION CAPACITORS, CIRCUITS THEREFROM, AND METHODS FOR F...
- Publication number 20080277761
- Publication date Nov 13, 2008
- Texas Instruments, Inc.
- Pushpa Mahalingam
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Methods and systems for capacitors
- Publication number 20080137262
- Publication date Jun 12, 2008
- Texas Instruments Inc.
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for selective plasma etch of an oxide layer
- Publication number 20060105573
- Publication date May 18, 2006
- Texas Instruments, Inc.
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field oxide profile of an isolation region associated with a contac...
- Publication number 20040150065
- Publication date Aug 5, 2004
- Der-E Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an integrated circuit thin film resistor
- Publication number 20040152299
- Publication date Aug 5, 2004
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field oxide profile of an isolation region associated with a contac...
- Publication number 20040007755
- Publication date Jan 15, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Der-E Jan
- H01 - BASIC ELECTRIC ELEMENTS

Pushpa Mahalingam

Person

Patents Grantslast 30 patents

Laterally diffused metal-oxide semiconductor (LDMOS) transistor wit...

Low cost, high performance analog metal oxide semiconductor transistor

Carbon and/or oxygen doped polysilicon resistor

Gate oxide fabrication and system

Polysilicon resistor using reduced grain size polysilicon

IC having trench-based metal-insulator-metal capacitor

LDMOS with high-k drain STI dielectric

IC having trench-based metal-insulator-metal capacitor

Polysilicon gate formation in CMOS transistors

LDMOS with high-k drain STI dielectric

Forming integrated circuit devices with metal-insulator-metal capac...

Method of forming an integrated circuit thin film resistor

Patents Applicationslast 30 patents

INTEGRATED DEEP TRENCH HIGH-K CAPACITOR AND METHOD

LATERALLY DIFFUSED METAL-OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR WIT...

SEMICONDUCTOR DEVICE WITH A HIGH K FIELD RELIEF DIELECTRIC STRUCTURE

LOW COST, HIGH PERFORMANCE ANALOG METAL OXIDE SEMICONDUCTOR TRANSISTOR

SEMICONDUCTOR DEVICE WITH NITROGEN DOPED FIELD RELIEF DIELECTRIC LAYER

Carbon and/or Oxygen Doped Polysilicon Resistor

SMALL GRAIN SIZE POLYSILICON ENGINEERING FOR THRESHOLD VOLTAGE MISM...

Method of annealing out silicon defectivity

LATERALLY DIFUSED METAL-OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR WITH...

LOW COST, HIGH PERFORMANCE ANALOG METAL OXIDE SEMICONDUCTOR TRANSISTOR

Carbon and/or Oxygen Doped Polysilicon Resistor

GATE OXIDE FABRICATION AND SYSTEM

POLYSILICON RESISTORS WITH HIGH SHEET RESISTANCE

POLYSILICON RESISTOR USING REDUCED GRAIN SIZE POLYSILICON

BCD IC WITH GATE ETCH AND SELF-ALIGNED IMPLANT INTEGRATION

IC HAVING TRENCH-BASED METAL-INSULATOR-METAL CAPACITOR

IC HAVING TRENCH-BASED METAL-INSULATOR-METAL CAPACITOR

LDMOS WITH HIGH-K DRAIN STI DIELECTRIC

POLYSILICON GATE FORMATION IN CMOS TRANSISTORS

LDMOS WITH HIGH-K DRAIN STI DIELECTRIC

SELECTIVE PLASMA ETCH OF TOP ELECTRODES FOR METAL-INSULATOR-METAL (...

ON-CHIP ISOLATION CAPACITORS, CIRCUITS THEREFROM, AND METHODS FOR F...

Methods and systems for capacitors

Method for selective plasma etch of an oxide layer

Field oxide profile of an isolation region associated with a contac...

Method of forming an integrated circuit thin film resistor

Field oxide profile of an isolation region associated with a contac...